公开(公告)号：US07329550B2

公开(公告)日：2008-02-12

申请号：US11031075

申请日：2005-01-10

申请人： Hsien-Wen Liu ,  Eugene Cheng ,  Jen-Lang Lue

发明人： Hsien-Wen Liu ,  Eugene Cheng ,  Jen-Lang Lue

IPC分类号： H01L21/66

CPC分类号： H01L22/24

摘要： A method for analyzing the structure of deep trench capacitors and a preparation method thereof are described. A protective layer is formed on a selected inspection area. Overlying circuit layers and an upper portion of a substrate, surrounding the selected inspection area, of the die are removed. A chemical etchant is used to selectively remove the exposed substrate material to uncover deep trench capacitors. A structural analysis of those deep trench capacitors is then performed.

摘要翻译： 对深沟槽电容器的结构分析方法及其制备方法进行说明。 在选定的检查区域上形成保护层。 去除覆盖电路层和围绕选定的检查区域的基板的上部。 使用化学蚀刻剂来选择性地去除暴露的基底材料以露出深沟槽电容器。 然后对这些深沟槽电容器进行结构分析。

公开(公告)号：US20070114860A1

公开(公告)日：2007-05-24

申请号：US11482066

申请日：2006-07-07

申请人： Chien-Jung Chen ,  Hsien-Wen Liu ,  Hui-Chao Hsu

发明人： Chien-Jung Chen ,  Hsien-Wen Liu ,  Hui-Chao Hsu

IPC分类号： H02K7/00 ,  H02K11/00 ,  H02K5/00

CPC分类号： F04D25/0613 ,  H02K5/1735 ,  H02K7/14 ,  H02K11/33

摘要： A cooling fan includes: a casing having a surrounding wall that defines an accommodating space; a circuit board disposed in the accommodating space and including a substrate and a control circuit, the substrate having a center portion that has a peripheral edge, and a plurality of spaced apart connecting beams that extend from the peripheral edge of the center portion and that are connected directly and securely to the surrounding wall; a hollow shaft secured directly to and protruding from the circuit board into the accommodating space; a stator mounted securely on the center portion of the substrate of the circuit board and coupled to the control circuit; a fan blade unit disposed in the accommodating space and including an annular hub journalled rotatably to the hollow shaft; and a rotor mounted on the hub.

摘要翻译： 冷却风扇包括：壳体，其具有限定容纳空间的周围壁; 布置在所述容纳空间中并且包括基板和控制电路的电路板，所述基板具有具有周缘的中心部分，以及从所述中心部分的周边边缘延伸的多个间隔开的连接梁， 直接和牢固地连接到周围的墙壁; 直接固定到电路板并从电路板突出到容纳空间中的中空轴; 固定器牢固地安装在电路板的基板的中心部分上并耦合到控制电路; 风扇叶片单元，设置在所述容纳空间中，并且包括可旋转地连接到所述中空轴的环形轮毂; 和安装在轮毂上的转子。

公开(公告)号：US20060244043A1

公开(公告)日：2006-11-02

申请号：US11454916

申请日：2006-06-16

申请人： Alex Wang ,  Shang-De Chang ,  Han-Chih Lin ,  Tzeng-Huei Shiau ,  I-Sheng Liu ,  Hsien-Wen Liu

发明人： Alex Wang ,  Shang-De Chang ,  Han-Chih Lin ,  Tzeng-Huei Shiau ,  I-Sheng Liu ,  Hsien-Wen Liu

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  G11C16/0433 ,  H01L27/115 ,  H01L27/11558 ,  H01L29/42328 ,  H01L29/7883

摘要： A single-poly two-transistor PMOS memory cell for multiple-time programming applications includes a PMOS floating gate transistor sharing a drain/source P+ diffusion region with a PMOS select gate transistor all formed within a first n-well. A control plate for the floating gate transistor is formed in a second n-well. A single-poly two-transitor PMOS memory cell for one-time programming applications includes a PMOS floating gate transistor having a source formed as a p+ diffusion region in a single n-well. The source is adapted to also serve as control plate for the floating gate transistor.

公开(公告)号：US09662812B2

公开(公告)日：2017-05-30

申请号：US13485307

申请日：2012-05-31

申请人： Chih-Hao Chen ,  Hsien-Wen Liu ,  Yi-Lin Tsai ,  Jui-Pin Hung ,  Jing-Cheng Lin

发明人： Chih-Hao Chen ,  Hsien-Wen Liu ,  Yi-Lin Tsai ,  Jui-Pin Hung ,  Jing-Cheng Lin

IPC分类号： B29C43/18 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

CPC分类号： B29C43/18 ,  H01L21/565 ,  H01L23/3121 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2924/1531 ,  H01L2924/157 ,  H01L2924/00012 ,  H01L2224/81

摘要： A method includes molding a polymer onto a package component. The step of molding includes a first molding stage performed at a first temperature, and a second molding stage performed at a second temperature different from the first temperature.

公开(公告)号：US09024497B2

公开(公告)日：2015-05-05

申请号：US13750316

申请日：2013-01-25

申请人： Chien-Jung Chen ,  Hsien-Wen Liu ,  Chih-Tsung Hsu ,  Tzu-Wen Tsai

发明人： Chien-Jung Chen ,  Hsien-Wen Liu ,  Chih-Tsung Hsu ,  Tzu-Wen Tsai

IPC分类号： H02K7/09 ,  H02K21/24

CPC分类号： H02K21/24 ,  H02K29/03

摘要： A motor includes a base, a rotor unit and a driving unit. The base has opposite first and second surfaces. The rotor unit includes a magnet unit disposed on a rotatable magnet carrier to face the first surface of the base. The driving unit includes a circuit board disposed between the base and the magnet unit, induction coils disposed on the circuit board and operatively associated with the magnet unit, a sensor unit disposed on the circuit board and spaced apart from the induction coils, and a rotor positioning component disposed on the second surface of the base and capable of magnet attraction with the magnet unit for positioning the rotor unit relative to the sensor unit when the rotor unit stops rotating.

摘要翻译： 电动机包括基座，转子单元和驱动单元。 底座具有相对的第一和第二表面。 转子单元包括设置在可旋转的磁体载体上以面向基座的第一表面的磁体单元。 所述驱动单元包括布置在所述基座和所述磁体单元之间的电路板，设置在所述电路板上且与所述磁体单元可操作地相关联的感应线圈，设置在所述电路板上并与所述感应线圈隔开的传感器单元，以及转子 定位部件设置在基座的第二表面上，并且当转子单元停止旋转时能够与磁体单元磁吸引，用于相对于传感器单元定位转子单元。

公开(公告)号：US20140210295A1

公开(公告)日：2014-07-31

申请号：US13750316

申请日：2013-01-25

申请人： Chien-Jung Chen ,  Hsien-Wen Liu ,  Chih-Tsung HSU ,  Tzu-Wen Tsai

发明人： Chien-Jung Chen ,  Hsien-Wen Liu ,  Chih-Tsung HSU ,  Tzu-Wen Tsai

IPC分类号： H02K21/24

CPC分类号： H02K21/24 ,  H02K29/03

摘要： A motor includes a base, a rotor unit and a driving unit. The base has opposite first and second surfaces. The rotor unit includes a magnet unit disposed on a rotatable magnet carrier to face the first surface of the base. The driving unit includes a circuit board disposed between the base and the magnet unit, induction coils disposed on the circuit board and operatively associated with the magnet unit, a sensor unit disposed on the circuit board and spaced apart from the induction coils, and a rotor positioning component disposed on the second surface of the base and capable of magnet attraction with the magnet unit for positioning the rotor unit relative to the sensor unit when the rotor unit stops rotating.

摘要翻译： 电动机包括基座，转子单元和驱动单元。 底座具有相对的第一和第二表面。 转子单元包括设置在可旋转的磁体载体上以面向基座的第一表面的磁体单元。 所述驱动单元包括布置在所述基座和所述磁体单元之间的电路板，设置在所述电路板上且与所述磁体单元可操作地相关联的感应线圈，设置在所述电路板上并与所述感应线圈隔开的传感器单元，以及转子 定位部件设置在基座的第二表面上，并且当转子单元停止旋转时能够与磁体单元磁吸引，用于相对于传感器单元定位转子单元。

公开(公告)号：US20090256264A1

公开(公告)日：2009-10-15

申请号：US12165587

申请日：2008-06-30

申请人： Yinan Chen ,  Hsien-Wen Liu ,  Tzu-Ching Tsai

发明人： Yinan Chen ,  Hsien-Wen Liu ,  Tzu-Ching Tsai

IPC分类号： H01L23/52

CPC分类号： H01L23/53295 ,  H01L21/76831 ,  H01L27/115 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is provided. An amorphous silicon layer that acts as a UV blocking layer replaces a conventional silicon-rich oxide (SRO) layer or the super silicon-rich oxide (SSRO) layer. By doing this, the process window is increased. In addition, silicon nitride sidewall spacer is formed inside the contact hole to prevent charge loss.

摘要翻译： 提供半导体器件。 作为UV阻挡层的非晶硅层代替常规富硅氧化物（SRO）层或超富硅氧化物（SSRO）层。 通过这样做，过程窗口增加。 此外，在接触孔内部形成氮化硅侧壁间隔物，以防止电荷损失。

公开(公告)号：US07078761B2

公开(公告)日：2006-07-18

申请号：US10794564

申请日：2004-03-05

申请人： Alex Wang ,  Shang-De Ted Chang ,  Han-Chih Lin ,  Tzeng-Huei Shiau ,  I-Sheng Liu ,  Hsien-Wen Liu

发明人： Alex Wang ,  Shang-De Ted Chang ,  Han-Chih Lin ,  Tzeng-Huei Shiau ,  I-Sheng Liu ,  Hsien-Wen Liu

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  G11C16/0433 ,  H01L27/115 ,  H01L27/11558 ,  H01L29/42328 ,  H01L29/7883

摘要： A single-poly two-transistor PMOS memory cell for multiple-time programming applications includes a PMOS floating gate transistor sharing a drain/source P+ diffusion region with a PMOS select gate transistor all formed within a first n-well. A control plate for the floating gate transistor is formed in a second n-well. A single-poly two-transitor PMOS memory cell for one-time programming applications includes a PMOS floating gate transistor having a source formed as a p+ diffusion region in a single n-well. The source is adapted to also serve as control plate for the floating gate transistor.

摘要翻译： 用于多次编程应用的单多晶双晶体管PMOS存储器单元包括共享漏极/源极P +扩散区的PMOS浮栅晶体管，其中PMOS选择栅晶体管全部形成在第一n阱内。 用于浮栅晶体管的控制板形成在第二n阱中。 用于一次编程应用的单晶双转移器PMOS存储器单元包括具有在单个n阱中形成为p +扩散区的源的PMOS浮栅晶体管。 源极也适用于浮栅晶体管的控制板。