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151.发明授权公开(公告)号：US06240674B1
公开(公告)日：2001-06-05
申请号：US08930602
申请日：1998-08-11
申请人： Tsuneo Otake , Yasumi Fukuzumi , Tsuneo Onodera , Yoshiaki Watanabe , Shigetaka Isoyama , Masashi Numabe
发明人： Tsuneo Otake , Yasumi Fukuzumi , Tsuneo Onodera , Yoshiaki Watanabe , Shigetaka Isoyama , Masashi Numabe
IPC分类号： A01C104
摘要： A seed top of foamed cells is constructed such that a porous sheet having open cells is affixed to one surface of a thin support band extending in a band-like configuration with its widthwise direction being an up-and-down direction, and accommodation recesses for accommodating seedling seeds are provided in the porous sheet. It is possible to reduce the size and weight of the seedling raising sheet used for raising seedlings and to eliminate the need for soil in raising seedling, thereby enabling an industrial mass-production of the seedling raising sheet.
摘要翻译： 泡沫细胞的种子顶部被构造成使得具有开放细胞的多孔片被固定在沿着宽度方向为上下方向的带状构造中延伸的薄支撑带的一个表面上，并且用于 在多孔片材中设置适应苗种子。 可以减小用于培育幼苗的育苗片的尺寸和重量，并且不需要用于培育幼苗的土壤，从而能够进行大量生产育苗片。
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152.发明授权Process cartridge and image forming apparatus usable with this process cartridge 失效可与该处理盒一起使用的处理盒和图像形成装置
公开(公告)号：US6016412A
公开(公告)日：2000-01-18
申请号：US17316
申请日：1998-02-02
申请人： Shinji Goto , Jun Saito , Hiroyuki Ishii , Masao Ando , Yoshiaki Watanabe , Yuzo Isoda , Masahide Tanoue , Ryukichi Inoue
发明人： Shinji Goto , Jun Saito , Hiroyuki Ishii , Masao Ando , Yoshiaki Watanabe , Yuzo Isoda , Masahide Tanoue , Ryukichi Inoue
CPC分类号： G03G21/1853 , G03G21/1647 , G03G2221/1654 , G03G2221/183 , G03G2221/1884
摘要： An image forming apparatus usable with a process cartridge comprising an image bearing member and a process device actable on the image bearing member includes guide device, contactable with the process cartridge, for guiding in the loading direction the process cartridge to be loaded into a main assembly of the apparatus; a positioning device for positioning the process cartridge, which is in the disengaged state from the guide device, into the loading location; and a pressing device for pressing the process device onto the positioning device.
摘要翻译： 可用于包括图像承载部件和可执行在图像承载部件上的处理装置的处理盒的图像形成装置包括可与处理盒接触的引导装置，用于沿加载方向引导将处理盒装载到主组件中 的装置; 定位装置，用于将处于从导向装置脱离的状态的处理盒定位到装载位置; 以及用于将处理装置按压到定位装置上的按压装置。
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公开(公告)号：US5651540A
公开(公告)日：1997-07-29
申请号：US435657
申请日：1995-05-05
申请人： Yoshiaki Watanabe , Takao Sameshima , Hiroaki Namiki , Tomoyuki Araki , Ryukichi Inoue , Kazuhide Kudo , Akio Nemoto
发明人： Yoshiaki Watanabe , Takao Sameshima , Hiroaki Namiki , Tomoyuki Araki , Ryukichi Inoue , Kazuhide Kudo , Akio Nemoto
CPC分类号： B65H1/04 , B65H1/266 , B65H9/02 , B65H9/163 , B65H2405/1142 , Y10S271/902
摘要： A sheet supplying device having a sheet support for supporting sheets, a sheet supply provided in a laterally deviated position with respect to the sheet supplying direction for supplying sheets supported by the sheet support and a stacking reference guide for impinging on a lateral end of the sheets supported by the sheet support to thereby define the position of the sheets. The guide defining the position of the sheets is supported by the sheet support in such a manner that the sheets are supported in a state inclined by a predetermined angle with respect to the sheet supplying direction.
摘要翻译： 具有用于支撑片材的片材支撑件的片材供给装置，相对于用于供给由片材支撑体支撑的片材的片材供给方向的横向偏离位置设置的片材供给部和用于冲击片材的侧端部的堆积基准引导件 由片材支撑件支撑，从而限定片材的位置。 限定片材位置的引导件由片材支撑件支撑，使得片材以相对于片材供给方向倾斜预定角度的状态被支撑。
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公开(公告)号：US5600427A
公开(公告)日：1997-02-04
申请号：US325932
申请日：1994-10-19
申请人： Yoshiaki Watanabe , Takuji Miyazawa
发明人： Yoshiaki Watanabe , Takuji Miyazawa
摘要： Two lowermost heating members and one intermediate heating member are provided for a plurality of paper feeding trays disposed in the paper feeding portion of an image forming apparatus and the temperature in the whole paper feeding portion is controlled by supplying power to each of the heating members. The heating member is provided with a heat reflective plate and a heat insulating plate side by side to insulate the heat of a heating element. The heating member is placed close to the tray and the temperature in the whole paper feeding portion is controlled under a convection current of the heat emanated from the heating element in the paper feed. Moreover, a humidity sensor may be installed on the side or within the image forming apparatus to control the power supplied to each heating member.
摘要翻译： 为设置在图像形成装置的供纸部分中的多个供纸托盘提供两个最下面的加热构件和一个中间加热构件，并且通过向每个加热构件供电来控制整个供纸部分中的温度。 加热部件并排设置有热反射板和绝热板，以使加热元件的热绝缘。 加热构件放置在靠近托盘的位置，并且整个送纸部分中的温度被控制在来自供纸装置中的加热元件的热量的对流。 此外，湿度传感器可以安装在图像形成装置的侧面或内部，以控制供应到每个加热构件的功率。
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公开(公告)号：US5229216A
公开(公告)日：1993-07-20
申请号：US784602
申请日：1991-10-24
CPC分类号： F16F9/306 , Y10T428/25 , Y10T428/258 , Y10T428/31815
摘要： This invention is a light weight vibration-damping sheet comprising an asphalt binder component, a hollow filler component and a surface treated calcium carbonate treated with a higher fatty acid or its salt, such as aluminum stearate, which acts as a hollow filler dispersion agent. As the hollow filler is dispersed uniformly in the asphalt, the sheet forming workability of the composition is greatly improved.
摘要翻译： 本发明是一种重量轻的减震片，其包含用作中空填料分散剂的沥青粘合剂组分，中空填料组分和用高级脂肪酸或其盐处理的表面处理的碳酸钙，例如硬脂酸铝。 随着中空填料均匀分散在沥青中，组合物的成型加工性大大提高。
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公开(公告)号：US5122849A
公开(公告)日：1992-06-16
申请号：US564818
申请日：1990-08-08
IPC分类号： H01L29/786
CPC分类号： H01L29/78624 , H01L29/78618 , H01L29/78621
摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.
摘要翻译： 硅薄膜晶体管阵列包括阵列状形式的多个硅薄膜晶体管，每个硅薄膜晶体管包括绝缘基板，形成在绝缘基板上的栅电极，形成在绝缘基板上的栅绝缘层， 栅电极，一对第一杂质含有在栅极绝缘层上形成的跨越栅电极的端部的硅层，形成在一对第一杂质上的本征硅层含有硅层和在 一对第一杂质之间的栅极绝缘层包含硅层，以便连接一对第一杂质含硅层，形成在本征硅层上的保护绝缘层，以及形成在源极电极和漏电极 该对第一杂质的接触部分含有硅层; 用于将硅薄膜晶体管的栅电极彼此连接的栅极布线; 以及用于将硅薄膜晶体管的源电极彼此连接的源极布线。
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公开(公告)号：US5121178A
公开(公告)日：1992-06-09
申请号：US564816
申请日：1990-08-08
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L29/78618 , H01L29/78621 , H01L29/78624 , H01L29/7866 , H01L29/78669
摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulating layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.
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公开(公告)号：US5121177A
公开(公告)日：1992-06-09
申请号：US564806
申请日：1990-08-08
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L29/78618 , H01L29/78621 , H01L29/78624 , H01L29/7866 , H01L29/78669
摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source writing for connecting the source electrodes of the silicon thin film transistors to each other.
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159.发明授权
公开(公告)号：US5111261A
公开(公告)日：1992-05-05
申请号：US564814
申请日：1990-08-08
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L29/78618 , H01L29/78621 , H01L29/78624 , H01L29/7866 , H01L29/78669
摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.
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公开(公告)号：US5047543A
公开(公告)日：1991-09-10
申请号：US437636
申请日：1989-11-17
申请人： Toshihisa Ogawa , Tomomi Ota , Shuichi Sato , Takemi Sunaga , Yoshiaki Watanabe , Katsuo Hatayama
发明人： Toshihisa Ogawa , Tomomi Ota , Shuichi Sato , Takemi Sunaga , Yoshiaki Watanabe , Katsuo Hatayama
IPC分类号： C07D401/12
CPC分类号： C07D401/12
摘要： A 1,4-dihydropyridine derivative represented by the formula ##STR1## wherein X is a hydrogen atom or an alkoxy group having 1 to 4 carbon atoms, A and B are the same or different and are each an alkylene group having 1 to 4 carbon atoms, and a pharmaceutically acceptable salt thereof are useful as the preventive and therapeutical agents of ischemic heart disease and hypertension.
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