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公开(公告)号：US20150227051A1
公开(公告)日：2015-08-13
申请号：US14697252
申请日：2015-04-27
Inventor： Wen-Yun Wang , Ching-Yu Chang
IPC: G03F7/42
Abstract: A system and method for reducing defects in photoresist processing is provided. An embodiment comprises cleaning the photoresist after development using an alkaline environment. The alkaline environment may comprise a neutral solvent and an alkaline developer. The alkaline environment will modify the attraction between residue leftover from development and a surface of the photoresist such that the surfaces repel each other, making the removal of the residue easier. By removing more residue, there will be fewer defects in the photolithographic process.
Abstract translation: 提供了减少光致抗蚀剂加工缺陷的系统和方法。 一个实施例包括使用碱性环境清洗显影后的光致抗蚀剂。 碱性环境可以包含中性溶剂和碱性显影剂。 碱性环境将改变从显影产生的残留物与光致抗蚀剂的表面之间的吸引力，使得表面彼此排斥，使残留物更容易除去。 通过去除更多的残留物，光刻工艺中的缺陷将会更少。
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公开(公告)号：US09017934B2
公开(公告)日：2015-04-28
申请号：US13790057
申请日：2013-03-08
Inventor： Wen-Yun Wang , Ching-Yu Chang
Abstract: A system and method for reducing defects in photoresist processing is provided. An embodiment comprises cleaning the photoresist after development using an alkaline environment. The alkaline environment may comprise a neutral solvent and an alkaline developer. The alkaline environment will modify the attraction between residue leftover from development and a surface of the photoresist such that the surfaces repel each other, making the removal of the residue easier. By removing more residue, there will be fewer defects in the photolithographic process.
Abstract translation: 提供了减少光致抗蚀剂加工缺陷的系统和方法。 一个实施例包括使用碱性环境清洗显影后的光致抗蚀剂。 碱性环境可以包含中性溶剂和碱性显影剂。 碱性环境将改变从显影产生的残留物与光致抗蚀剂的表面之间的吸引力，使得表面彼此排斥，使残留物更容易除去。 通过去除更多的残留物，光刻工艺中的缺陷将会更少。
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公开(公告)号：US09005881B2
公开(公告)日：2015-04-14
申请号：US14087125
申请日：2013-11-22
Inventor： Fong-Cheng Lee , Ching-Yu Chang
IPC: G03F7/20
CPC classification number: G03F7/2002 , G03F7/11 , G03F7/16 , G03F7/167 , G03F7/20
Abstract: A lithography method of manufacturing integrated circuits is disclosed. A combination photoalignment-photoresist layer is formed on a substrate. A treatment is performed on the combination photoalignment-photoresist layer. The combination photoalignment-photoresist layer is exposed to a predetermined pattern. The combination photoalignment-photoresist layer is developed to form a pattern and expose a portion of the substrate.
Abstract translation: 公开了一种制造集成电路的光刻方法。 在基板上形成组合的光定位 - 光致抗蚀剂层。 对组合光电子位置 - 光致抗蚀剂层进行处理。 组合光电子位置 - 光致抗蚀剂层暴露于预定图案。 显影组合的光定位 - 光致抗蚀剂层以形成图案并暴露基底的一部分。
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公开(公告)号：US20150050598A1
公开(公告)日：2015-02-19
申请号：US13966981
申请日：2013-08-14
Inventor： Ya-Ling Cheng , Ching-Yu Chang
CPC classification number: B01D65/02 , B01D2315/02 , B01D2321/02 , B01D2321/04 , B01D2321/162 , B01D2321/164 , B01D2321/168 , B01D2321/2033 , B01D2321/2075 , B01D2321/2083 , G03F7/00 , G03F7/16
Abstract: A method includes performing a first cleaning step to clean a membrane, wherein during the first cleaning step, a first solvent passes through the membrane. After the first cleaning step, a second cleaning step is performed to clean the membrane. During the second cleaning step, a second solvent passes through the membrane. The first solvent and the second solvent are in different groups among three solvent groups, wherein the three solvent groups include a non-polar solvent group, a polar aprotic solvent group, and a polar protic solvent group.
Abstract translation: 一种方法包括进行第一清洗步骤以清洁膜，其中在第一清洗步骤期间，第一溶剂通过膜。 在第一清洗步骤之后，执行第二清洗步骤以清洁膜。 在第二清洗步骤期间，第二溶剂通过膜。 第一溶剂和第二溶剂在三个溶剂组中是不同的，其中三个溶剂基团包括非极性溶剂基团，极性非质子溶剂基团和极性质子溶剂基团。
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公开(公告)号：US08895234B2
公开(公告)日：2014-11-25
申请号：US13760306
申请日：2013-02-06
Inventor： Ching-Yu Chang , Vincent Yu
IPC: G03F7/26
CPC classification number: G03F7/2041 , G03F7/70341
Abstract: Provided is a method of performing a lithography process. The method includes: exposing, through an immersion lithography process, a photo-sensitive material on a substrate, the immersion lithography process using a fluid for the exposing; thereafter treating the photo-sensitive material with a solution to neutralize quenchers that have diffused into the photo-sensitive material through the liquid, wherein the solution contains a substance that diffuses into the photo-sensitive material at a first rate that is dependent on a second at which the quenchers diffuse into the photo-sensitive material; thereafter removing a portion of the photo-sensitive material; thereafter performing a post-exposure bake to the photo-sensitive material; and developing the photo-sensitive material.
Abstract translation: 提供了进行光刻工艺的方法。 该方法包括：通过浸没式光刻工艺将基材上的感光材料曝光，使用用于曝光的流体的浸没式光刻工艺; 然后用溶液处理感光材料以中和通过液体扩散到光敏材料中的猝灭剂，其中溶液含有以依赖于第二种的第一速率扩散到光敏材料中的物质 猝灭剂扩散到光敏材料中; 之后除去一部分感光材料; 然后对感光材料进行曝光后烘烤; 并开发感光材料。
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Patent Agency Ranking
公开(公告)号：US08715919B2
公开(公告)日：2014-05-06
申请号：US13971650
申请日：2013-08-20
Inventor： Ching-Yu Chang , Chih-Cheng Chiu
CPC classification number: G03F7/2041 , G03F7/0382 , G03F7/0392 , G03F7/168
Abstract: Lithography methods on a semiconductor substrate are described. The methods include coating a resist layer on the substrate, wherein the resist layer comprises a resist polymer configured to turn soluble to a base solution in response to reaction with an acid, and a switchable polymer that includes a base soluble polymer having a carboxylic acid, hydroxyl, lactone, or anhydride functional group, performing a pre-exposure bake on the resist layer, exposing the resist-coated substrate, and developing the exposed substrate with a developing solution.
Abstract translation: 描述半导体衬底上的平版印刷方法。 所述方法包括在基底上涂覆抗蚀剂层，其中抗蚀剂层包含抗反应聚合物，其被配置为响应于与酸的反应而转化为碱溶液，并且可切换聚合物包括具有羧酸的碱溶性聚合物， 羟基，内酯或酸酐官能团，在抗蚀剂层上进行预曝光烘烤，曝光抗蚀剂涂布的基底，并用显影液显影曝光的基底。
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公开(公告)号：US20130309611A1
公开(公告)日：2013-11-21
申请号：US13760306
申请日：2013-02-06
Inventor： Ching-Yu Chang , Vincent Wu
IPC: G03F7/20
CPC classification number: G03F7/2041 , G03F7/70341
Abstract: Provided is a method of performing a lithography process. The method includes: exposing, through an immersion lithography process, a photo-sensitive material on a substrate, the immersion lithography process using a fluid for the exposing; thereafter treating the photo-sensitive material with a solution to neutralize quenchers that have diffused into the photo-sensitive material through the liquid, wherein the solution contains a substance that diffuses into the photo-sensitive material at a first rate that is dependent on a second at which the quenchers diffuse into the photo-sensitive material; thereafter removing a portion of the photo-sensitive material; thereafter performing a post-exposure bake to the photo-sensitive material; and developing the photo-sensitive material.
Abstract translation: 提供了进行光刻工艺的方法。 该方法包括：通过浸没式光刻工艺将基材上的感光材料曝光，使用用于曝光的流体的浸没式光刻工艺; 然后用溶液处理感光材料以中和通过液体扩散到光敏材料中的猝灭剂，其中溶液含有以依赖于第二种的第一速率扩散到光敏材料中的物质 猝灭剂扩散到光敏材料中; 之后除去一部分感光材料; 然后对感光材料进行曝光后烘烤; 并开发感光材料。
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公开(公告)号：US20250155809A1
公开(公告)日：2025-05-15
申请号：US18389267
申请日：2023-11-14
Inventor： Chun-Chih Ho , Ching-Yu Chang
Abstract: A photoresist composition comprises an acid-cleavable copolymer formed from oligomers in a backbone or an arm of the copolymer. Each oligomer comprises an acid-labile group; a first comonomer having an acidic leaving substituent; and at least one of a second comonomer having a proton donating substituent or a third comonomer having a polar substituent. The copolymer may also include a RAFT (Reversible Addition Fragmentation chain Transfer) chain transfer agent. Upon exposure to radiation, acid is generated that cleaves the copolymer. This improves the line edge roughness (LER) of the photoresist layer while maintaining good coating properties.
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公开(公告)号：US20250138417A1
公开(公告)日：2025-05-01
申请号：US18385563
申请日：2023-10-31
Inventor： Shi-Cheng Wang , An-Ren Zi , Ching-Yu Chang
IPC: G03F7/004
Abstract: Methods and materials for improving the hardness of a metallic photoresist used in EUV photolithography are disclosed. Multiple different additive types are described for use with the metallic photoresist. The additives can be applied to the photoresist as part of existing solutions, or applied as an ingredient in a treatment solution during various steps for applying, patterning, and developing the metallic photoresist. The resulting photoresist layer has increased hardness and higher EUV light sensitivity, which permits a reduced radiation dosage.
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公开(公告)号：US20250123562A1
公开(公告)日：2025-04-17
申请号：US18379870
申请日：2023-10-13
Inventor： Ming-Hui Weng , Wei-Han Lai , Ching-Yu Chang
Abstract: A photoresist composition comprises an organic polymer and a floatable polymer. The floatable polymer has a lower surface energy than the organic polymer. Upon curing, the floatable polymer forms a surface layer above the photoresist layer formed by the organic polymer. The presence of the surface layer reduces optical flare and chemical flare, thus improving the critical dimension of the features formed in a material layer below the photoresist layer.
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