Method of manufacturing a semiconductor device
    162.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07531446B2

    公开(公告)日:2009-05-12

    申请号:US11418067

    申请日:2006-05-05

    Abstract: A method of manufacturing a semiconductor device may involve providing a first insulation pattern on a substrate including first and second regions. The first insulation pattern may include a first contact hole for exposing the first region. A spacer may be provided on a sidewall of the first insulation pattern. A conductive pattern may be provided in the first contact hole such that a top surface of the conductive pattern is lower than a top surface of the first insulation pattern. A second insulation pattern may be provided on the conductive pattern. The first insulation pattern may be etched using the second insulation pattern and the spacer as a self-aligning mask to form a second contact hole for exposing the second region. A wiring may be provided in the second contact hole.

    Abstract translation: 制造半导体器件的方法可以包括在包括第一和第二区域的衬底上提供第一绝缘图案。 第一绝缘图案可以包括用于暴露第一区域的第一接触孔。 间隔件可以设置在第一绝缘图案的侧壁上。 可以在第一接触孔中设置导电图案,使得导电图案的顶表面低于第一绝缘图案的顶表面。 可以在导电图案上提供第二绝缘图案。 可以使用第二绝缘图案和间隔件作为自对准掩模来蚀刻第一绝缘图案,以形成用于暴露第二区域的第二接触孔。 可以在第二接触孔中设置布线。

    GUN TYPE CONTINUOUS CLIP EJECTING APPARATUS
    163.
    发明申请
    GUN TYPE CONTINUOUS CLIP EJECTING APPARATUS 有权
    枪类型连续剪裁装置

    公开(公告)号:US20090038133A1

    公开(公告)日:2009-02-12

    申请号:US12044265

    申请日:2008-03-07

    Applicant: Yong Woo Lee

    Inventor: Yong Woo Lee

    Abstract: Disclosed is a gun type continuous clip ejecting apparatus. The gun type continuous clip ejecting apparatus includes a body including bodies symmetrically combined by each other with a curved shape and a clip guide groove therein; a cover inserted into the upper front end of the body; a slider installed slidably along a guide groove formed within the body; a clip loading push rod in which protrusions are formed at an end thereof and hooked to the hook of the slider, a hook is protruded upwardly at the other end thereof and protrusions are protruded at sides thereof; a tension spring in which an end thereof is hooked the hook of the clip loading push rod and the other end thereof is pulled upwardly and fixed to the upper inside surface of the slider; a discharge push rod; a tension spring; and a trigger rotatably fixed to a bottom side of the body by a hinge shaft and including upper hooking protrusions contacted with a bottom end between both sides of the discharge push rod.

    Abstract translation: 公开了一种枪式连续夹子排出装置。 枪型连续夹子弹出装置包括:主体,其包括彼此对称地具有弯曲形状的对象体和夹子引导槽; 插入身体上前端的盖子; 滑块,其沿着形成在所述主体内的引导槽可滑动地安装; 一个夹子装载推杆,其中突出物在其一端形成并钩在滑块的钩上,钩在其另一端向上突出,突起在其侧面突出; 拉伸弹簧,其端部钩住夹子装载推杆的钩,其另一端被向上拉并固定在滑块的上内表面; 排放推杆; 拉伸弹簧 以及通过铰链轴可旋转地固定到本体的底侧的触发器,并且包括与排出推杆的两侧之间的底端接触的上钩状突起。

    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    164.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开
    半导体器件及其形成方法

    公开(公告)号:US20090020816A1

    公开(公告)日:2009-01-22

    申请号:US12175364

    申请日:2008-07-17

    CPC classification number: H01L27/0688 H01L21/8221

    Abstract: One embodiment generally described herein can be characterized as a semiconductor device. The semiconductor device can include a first transistor on a semiconductor substrate. A first interlayer insulating layer may be disposed over the first transistor and includes a first recess region. A single-crystalline semiconductor pattern may be disposed in the first recess region. A single-crystalline semiconductor plug may connect the semiconductor substrate to the single-crystalline semiconductor pattern. A second transistor may be disposed on the single-crystalline semiconductor pattern.

    Abstract translation: 本文通常描述的一个实施例可以被表征为半导体器件。 半导体器件可以包括半导体衬底上的第一晶体管。 第一层间绝缘层可以设置在第一晶体管的上方,并且包括第一凹部区域。 单晶半导体图案可以设置在第一凹部区域中。 单晶半导体插头可以将半导体衬底连接到单晶半导体图案。 第二晶体管可以设置在单晶半导体图案上。

    Method of forming a metal wiring in a semiconductor device
    165.
    发明授权
    Method of forming a metal wiring in a semiconductor device 有权
    在半导体器件中形成金属布线的方法

    公开(公告)号:US07452807B2

    公开(公告)日:2008-11-18

    申请号:US11475166

    申请日:2006-06-27

    CPC classification number: H01L21/7685 H01L21/32139 Y10T29/49117

    Abstract: Example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device. Other example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device without a generation of a bridge between adjacent metal wirings. In a method of forming a metal wiring in a semiconductor device, at least one metal layer and at least one barrier layer may be sequentially formed on a substrate. A metal blocking layer may be formed on the at least one barrier metal layer. A hard mask layer may be formed on the metal blocking layer. A hard mask pattern may be formed on the metal blocking layer by etching the hard mask layer without an exposure of the at least one barrier metal layer. A metal blocking layer pattern may be formed on the at least one barrier metal layer by etching the metal blocking layer using the hard mask pattern as an etching mask. The metal wiring having at least one metal layer pattern and at least one barrier metal layer pattern may be formed on the substrate by etching the at least one barrier metal layer and the at least one metal layer using the hard mask pattern as an etching mask. The metal wiring having a reduced width may be obtained without a failure (e.g., a bridge).

    Abstract translation: 本发明的示例性实施例涉及在半导体器件中形成金属布线的方法。 本发明的其他示例性实施例涉及在半导体器件中形成金属布线而不在相邻金属布线之间产生桥的方法。 在半导体器件中形成金属布线的方法中,可以在衬底上依次形成至少一个金属层和至少一个阻挡层。 金属阻挡层可以形成在至少一个阻挡金属层上。 可以在金属阻挡层上形成硬掩模层。 可以通过在不暴露至少一个阻挡金属层的情况下蚀刻硬掩模层而在金属阻挡层上形成硬掩模图案。 通过使用硬掩模图案作为蚀刻掩模蚀刻金属阻挡层,可以在至少一个阻挡金属层上形成金属阻挡层图案。 通过使用硬掩模图案作为蚀刻掩模蚀刻至少一个阻挡金属层和至少一个金属层,可以在基板上形成具有至少一个金属层图案和至少一个阻挡金属层图案的金属布线。 可以获得具有减小的宽度的金属布线而没有故障(例如桥)。

    LAMP SUPPORTER AND LIQUID CRYSTAL DISPLAY HAVING THE SAME
    166.
    发明申请
    LAMP SUPPORTER AND LIQUID CRYSTAL DISPLAY HAVING THE SAME 审中-公开
    灯泡支架和液晶显示器

    公开(公告)号:US20080049161A1

    公开(公告)日:2008-02-28

    申请号:US11831025

    申请日:2007-07-31

    Abstract: The present invention relates to a lamp supporter having a shock absorbing structure capable of attenuating a shock transferred to a lamp and a liquid crystal display having the same. The lamp supporter includes a base plate having a concavo-convex portion formed in at least a partial region of the base plate, a lamp fixing unit formed on a surface of the base plate and fixing a lamp and an optical member supporting unit formed on the surface of the base plate to support an optical member. The concavo-convex portion includes a predetermined form.

    Abstract translation: 本发明涉及具有能够衰减转移到灯的冲击的冲击吸收结构的灯支架和具有该冲击吸收结构的液晶显示器。 灯支架包括:基板,其形成在基板的至少部分区域中的凹凸部;灯固定单元,形成在基板的表面上,并固定灯;以及光学部件支撑单元,形成在基板上 基板的表面以支撑光学构件。 凹凸部包括预定形式。

    LIQUID CRYSTAL DISPLAY DEVICE
    167.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE 有权
    液晶显示装置

    公开(公告)号:US20080043191A1

    公开(公告)日:2008-02-21

    申请号:US11839752

    申请日:2007-08-16

    CPC classification number: G02F1/133707

    Abstract: Disclosed is a liquid crystal display device including a first substrate, a second substrate, and a liquid crystal layer interposed there between. The first substrate is provided with gate lines and data lines thereon. The gate lines and data lines cross with each other and are insulated from each other. Pixel electrodes are stacked on the gate lines and data lines. Each pixel electrode includes first and second sub-pixel electrodes spaced apart from each other and a connection electrode, which connects the first sub-pixel electrode to the second sub-pixel electrode. The second substrate is provided with a common electrode thereon. The common electrode includes a first domain divider formed on the center of the first sub-pixel electrode and a second domain divider formed on the center of the second sub-pixel electrode.

    Abstract translation: 公开了一种液晶显示装置,包括第一基板,第二基板和介于其间的液晶层。 第一基板上设置有栅线和数据线。 栅极线和数据线彼此交叉并且彼此绝缘。 像素电极堆叠在栅极线和数据线上。 每个像素电极包括彼此间隔开的第一和第二子像素电极和将第一子像素电极连接到第二子像素电极的连接电极。 第二基板上设置有公共电极。 公共电极包括形成在第一子像素电极的中心上的第一域分隔器和形成在第二子像素电极的中心的第二域分隔器。

    Organic light-emitting diode display device
    168.
    发明申请
    Organic light-emitting diode display device 有权
    有机发光二极管显示装置

    公开(公告)号:US20080007159A1

    公开(公告)日:2008-01-10

    申请号:US11647664

    申请日:2006-12-29

    CPC classification number: H01L51/529 H01L51/5237

    Abstract: An organic light-emitting diode (OLED) display device includes a display panel having an OLED element, a receiving container to receive the display panel, a driving circuit part that is disposed under the receiving container and drives the display panel, and a heat insulating member that is disposed between the display panel and the receiving container, and comprises a porous polymer. Deterioration of the light-emitting layer may be prevented and/or reduced to increase durability of the OLED display device.

    Abstract translation: 有机发光二极管(OLED)显示装置包括具有OLED元件的显示面板,用于接收显示面板的接收容器,设置在接收容器下方并驱动显示面板的驱动电路部分,以及绝热 构件,其设置在显示面板和接收容器之间,并且包括多孔聚合物。 可以防止和/或减少发光层的劣化以增加OLED显示装置的耐久性。

    DEVICE ISOLATION STRUCTURE INCORPORATED IN SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    169.
    发明申请
    DEVICE ISOLATION STRUCTURE INCORPORATED IN SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开
    在半导体器件中并入的器件隔离结构及其形成方法

    公开(公告)号:US20070284692A1

    公开(公告)日:2007-12-13

    申请号:US11761949

    申请日:2007-06-12

    CPC classification number: H01L21/76232 H01L27/1463

    Abstract: The structure of the present invention comprises a semiconductor substrate and a trench region formed on the semiconductor substrate. The trench region includes an extended funnel portion in the vicinity of the semiconductor substrate surface. A device isolation layer is formed at the trench region. The device isolation layer includes a void formed at a lower level than the funnel portion. The sidewalls of the hard mask pattern and the internal walls of the trench region are etched to form a funnel portion with an extended trench region at the vicinity of the semiconductor substrate surface. Accordingly, the void in the trench region does not extend above a surface of the semiconductor substrate.

    Abstract translation: 本发明的结构包括半导体衬底和形成在半导体衬底上的沟槽区域。 沟槽区域包括在半导体衬底表面附近的延伸漏斗部分。 在沟槽区域形成器件隔离层。 器件隔离层包括形成在比漏斗部分低的水平处的空隙。 蚀刻硬掩模图案的侧壁和沟槽区域的内壁,以在半导体衬底表面附近形成具有延伸沟槽区域的漏斗部分。 因此,沟槽区域中的空隙不会延伸到半导体衬底的表面之上。

    ELECTRIC OVEN
    170.
    发明申请
    ELECTRIC OVEN 有权
    电烤箱

    公开(公告)号:US20070145033A1

    公开(公告)日:2007-06-28

    申请号:US11616991

    申请日:2006-12-28

    CPC classification number: F24C15/325

    Abstract: An electric oven is provided. The electric oven includes a chamber, a heater that heats air in the chamber and a flow guide defining a cooking space for food therein. The flow guide uniformly transfers heated air in the chamber to the food in the cooking space. The flow guide includes a body for covering the food and an exhaust for exhausting air that flows into the body.

    Abstract translation: 提供电烤炉。 电烤箱包括一个室,一个加热室,加热室中的空气和一个流动导向器,用于限定食物的烹饪空间。 流动引导件将腔室中的加热空气均匀地转移到烹饪空间中的食物。 流动引导件包括用于覆盖食物的主体和用于排出流入身体的空气的排气。

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