摘要:
Example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device. Other example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device without a generation of a bridge between adjacent metal wirings. In a method of forming a metal wiring in a semiconductor device, at least one metal layer and at least one barrier layer may be sequentially formed on a substrate. A metal blocking layer may be formed on the at least one barrier metal layer. A hard mask layer may be formed on the metal blocking layer. A hard mask pattern may be formed on the metal blocking layer by etching the hard mask layer without an exposure of the at least one barrier metal layer. A metal blocking layer pattern may be formed on the at least one barrier metal layer by etching the metal blocking layer using the hard mask pattern as an etching mask. The metal wiring having at least one metal layer pattern and at least one barrier metal layer pattern may be formed on the substrate by etching the at least one barrier metal layer and the at least one metal layer using the hard mask pattern as an etching mask. The metal wiring having a reduced width may be obtained without a failure (e.g., a bridge).
摘要:
Example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device. Other example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device without a generation of a bridge between adjacent metal wirings. In a method of forming a metal wiring in a semiconductor device, at least one metal layer and at least one barrier layer may be sequentially formed on a substrate. A metal blocking layer may be formed on the at least one barrier metal layer. A hard mask layer may be formed on the metal blocking layer. A hard mask pattern may be formed on the metal blocking layer by etching the hard mask layer without an exposure of the at least one barrier metal layer. A metal blocking layer pattern may be formed on the at least one barrier metal layer by etching the metal blocking layer using the hard mask pattern as an etching mask. The metal wiring having at least one metal layer pattern and at least one barrier metal layer pattern may be formed on the substrate by etching the at least one barrier metal layer and the at least one metal layer using the hard mask pattern as an etching mask. The metal wiring having a reduced width may be obtained without a failure (e.g., a bridge).
摘要:
A method of forming an ion implantation mask includes forming a field area on a semiconductor substrate, forming an amorphous carbon layer on the semiconductor substrate, forming a hard mask layer on the amorphous carbon layer, forming an etching mask pattern on the hard mask layer, and etching the hard mask layer and the amorphous carbon layer to expose the field area through the etching mask pattern, wherein etching the hard mask layer and the amorphous carbon layer forms a hard mask layer pattern and an amorphous carbon layer pattern.
摘要:
A method of forming an ion implantation mask includes forming a field area on a semiconductor substrate, forming an amorphous carbon layer on the semiconductor substrate, forming a hard mask layer on the amorphous carbon layer, forming an etching mask pattern on the hard mask layer, and etching the hard mask layer and the amorphous carbon layer to expose the field area through the etching mask pattern, wherein etching the hard mask layer and the amorphous carbon layer forms a hard mask layer pattern and an amorphous carbon layer pattern.
摘要:
An energy storage apparatus has developed for railway vehicles by adopting a bidirectional DC-DC converter to increase the efficiency of charge/discharge, comprising that; a power receiving unit, filter unit, charging unit storage unit having a plurality of super-capacitors, capacitor monitoring unit, a plurality of bidirectional DC-DC converters arranged in parallel, and voltage detector electrically connected to the filter unit, current detector for detecting the currents flowing. The controller further comprises; an analog interface board, signal identifying board, signal control board, digital output contact unit, communicating board, PWM control board, optical output board, external gate driver. The PWM control board includes; a sensor input circuit, A/D converter, calculation unit, calculation control processor, and power monitoring unit. It is easy to add a storage unit including supercapacitor in a form of box module for increasing capacity and efficient of charging/discharging of the storage unit through various sensors and signal checking.
摘要:
A scan driver drives a display device having a plurality of gate lines transferring scan signals, and a plurality of source lines transferring data signals. The scan driver includes a shift register and a multiple signal applying unit. The shift register includes a plurality of cascade-connected stages, each stage having an output terminal electrically connected to a respective one of the plurality of gate lines. The multiple signal applying unit applies a sub scan signal and a main scan signal. The sub scan signal and the main scan signal sequentially activate each of the plurality of gate lines. Therefore, the scan lines receive the scan signal twice, so that the liquid crystal capacitors electrically connected to the gate lines receive the data voltage twice. As a result, even though the time for charging the liquid crystal capacitors may be reduced, the liquid crystal capacitors may be fully charged to enhance display quality.
摘要:
A backlight unit includes a mold frame, a metal core printed circuit board (“MCPCB”) on which at least one light emitting diode (“LED”) is mounted, a reflector, a light guide plate, and an optical sheet. The mold frame includes an MCPCB fixing portion, the MCPCB is directly and removably disposed on the MCPCB fixing portion, and a lower surface of the MCPCB is exposed to the outside of the mold frame. On the MCPCB, a reflector, a light guide plate, and an optical sheet are placed in the order named. The light guide plate has a light entering surface facing the LED.
摘要:
A backlight assembly includes; a plurality of light guide blocks disposed substantially in parallel with each other along a first direction, each of the plurality of light guide blocks including; a light guide plate (“LGP”) having a wedge-shape decreasing in thickness from a first side thereof to a second side thereof, and a light source unit disposed facing a side surface of the LGP, and a light source driving unit which individually controls the light source units of the plurality of light guide blocks to emit light via a local dimming method.
摘要:
A liquid crystal display includes a first substrate and a second substrate facing each other, a pixel electrode disposed on the first substrate and including a first sub-pixel electrode and a second sub-pixel electrode spaced apart from the first sub-pixel electrode by a gap, a common electrode disposed on the second substrate, a shielding member disposed on the first substrate or the second substrate and overlapping the gap between the first sub-pixel electrode and the second sub-pixel electrode, an alignment layer disposed on at least one of the pixel electrode and the common electrode, and a liquid crystal layer disposed between the first substrate and the second substrate.
摘要:
A display substrate, a method of fabricating the same, and a liquid crystal display apparatus having the same. The display substrate includes a storage electrode extending over first and second areas formed on a substrate, a insulating layer pattern formed on the storage electrode, and first and second pixel electrodes formed on the insulating layer pattern. At least one of the first and second pixel electrodes has at least one recess. The insulating layer pattern has first and second openings formed in the first and second areas corresponding to the storage electrode. Accordingly, electric short circuits between the first and second pixel electrodes is prevented due to the recess or the openings during the manufacturing process for the first and second pixel electrodes.