公开(公告)号：US11576421B2

公开(公告)日：2023-02-14

申请号：US17037552

申请日：2020-09-29

Applicant: Meiyun Zhang ,  Shunxi Song ,  Xue Jiang ,  Bin Yang ,  Jingyi Nie ,  Jiaojun Tan

Inventor： Meiyun Zhang ,  Shunxi Song ,  Xue Jiang ,  Bin Yang ,  Jingyi Nie ,  Jiaojun Tan

IPC: A24B3/14 ,  A24B15/12 ,  A24B15/24 ,  A24B3/18 ,  A24B15/28

Abstract: A method for increasing bulkiness of reconstituted tobacco by adding tobacco stem particles includes (1) pulverizing a first portion of tobacco stems to obtain tobacco stem particles; (2) classifying the tobacco stem particles with mesh sieves and selecting the tobacco stem particles with a predetermined mesh size; (3) extracting a second portion of the tobacco stems with water and grinding to form a tobacco stem slurry that has a beating degree of 12-14° SR, and mixing the tobacco stem slurry with tobacco leaves in a weight ratio of 6:4 and grinding to obtaining a tobacco slurry that has a beating degree of 18-20° SR; (4) cutting plant fiber pulp boards and dispersing in water to form a plant fiber pulp; (5) preparing a filler solution that contains 10 wt % of a mineral filler; (6) mixing, rolling and drying to obtain the reconstituted tobacco.

公开(公告)号：US09278330B2

公开(公告)日：2016-03-08

申请号：US12825303

申请日：2010-06-28

Applicant: Soumitra Deshmukh ,  Anna Lee Tonkovich ,  Terry Mazanec ,  Bin Yang ,  Kai Jarosch ,  Richard Long

Inventor： Soumitra Deshmukh ,  Anna Lee Tonkovich ,  Terry Mazanec ,  Bin Yang ,  Kai Jarosch ,  Richard Long

IPC: B01J8/06 ,  B01J19/00 ,  B01J23/28 ,  B01J23/887 ,  B01J37/02 ,  C07C45/38 ,  B01J21/06 ,  B01J29/03

CPC classification number: B01J19/0093 ,  B01J21/063 ,  B01J23/28 ,  B01J23/8877 ,  B01J29/0308 ,  B01J37/0203 ,  B01J37/0205 ,  B01J37/0225 ,  B01J37/0244 ,  B01J37/0248 ,  B01J2219/00822 ,  B01J2219/00835 ,  B01J2219/00844 ,  B01J2219/0086 ,  B01J2219/00873 ,  B01J2219/00889 ,  B01J2219/00984 ,  B01J2229/18 ,  C07C45/38 ,  C07C47/04

Abstract: Methods for controlling series or series-parallel reactions are described. Novel microchannel apparatus having mesoporous structures adjacent to bulk flow paths are described. Methods of synthesizing formaldehyde from methanol are also described.

Abstract translation: 描述了控制串联或串联反应的方法。 描述了具有与大量流动路径相邻的介孔结构的新型微通道装置。 还描述了从甲醇合成甲醛的方法。

公开(公告)号：US09059096B2

公开(公告)日：2015-06-16

申请号：US13356090

申请日：2012-01-23

Applicant: Michael A. Guillorn ,  Christian Lavoie ,  Ghavam G. Shahidi ,  Bin Yang ,  Zhen Zhang

Inventor： Michael A. Guillorn ,  Christian Lavoie ,  Ghavam G. Shahidi ,  Bin Yang ,  Zhen Zhang

IPC: H01L23/62 ,  H01L21/285 ,  H01L21/8238 ,  H01L29/417 ,  H01L29/66 ,  H01L29/45 ,  H01L29/786 ,  H01L23/485 ,  H01L21/768

CPC classification number: H01L21/28518 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/823814 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/41725 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/458 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming silicide contacts includes forming a dielectric layer on a gate spacer, a gate stack, and a first semiconductor layer. The first semiconductor layer comprises source/drain regions. Contact trenches are formed in the dielectric layer so as to expose at least a portion of the source/drain regions. A second semiconductor layer is formed within the contact trenches. A metallic layer is formed on the second semiconductor layer. An anneal is performed to form a silicide region between the second semiconductor layer and the metallic layer. A conductive contact layer is formed on the metallic layer or the silicide region.

Abstract translation: 一种形成硅化物触点的方法包括在栅极间隔物，栅极叠层和第一半导体层上形成电介质层。 第一半导体层包括源/漏区。 在电介质层中形成接触沟槽，以暴露源/漏区域的至少一部分。 在接触沟槽内形成第二半导体层。 在第二半导体层上形成金属层。 进行退火以在第二半导体层和金属层之间形成硅化物区域。 在金属层或硅化物区域上形成导电接触层。

公开(公告)号：US09009755B2

公开(公告)日：2015-04-14

申请号：US13581628

申请日：2011-06-24

Applicant: Jianhua Kong ,  Bin Yang ,  Liming Zhou

Inventor： Jianhua Kong ,  Bin Yang ,  Liming Zhou

IPC: H04N7/10 ,  H04N7/025 ,  H04N21/258

CPC classification number: H04N21/25891 ,  H04L65/4076 ,  H04N21/25

Abstract: The disclosure provides a match-rule based service message transfer method and system in the IPTV, to address the problems in the IPTV message system of message storing and backlog, low push efficiency and poor usability. In the disclosure, match fields are arranged in a set-top box and a service message to be sent, the service message is sent by means of broadcast or multicast, the set-top box performs matching for the match fields based on the match rule, and filters the message. The disclosure avoids sending a service message by means of unicast, increases the push efficiency and can greatly reduce the storage load of offline messages in a message system. The formed message may be sent according to a single or combined policy which depends on a specific service attribute, thereby greatly facilitating the service operation.

Abstract translation: 本发明提供了一种基于匹配规则的IPTV业务消息传递方法和系统，解决了IPTV消息系统中消息存储和积压问题，推送效率低，可用性差。 在本公开中，匹配字段被布置在机顶盒和要发送的服务消息中，服务消息通过广播或多播发送，机顶盒基于匹配规则对匹配字段进行匹配 ，并过滤消息。 本发明避免了通过单播发送业务消息，提高了推送效率，大大降低了消息系统中离线消息的存储负荷。 形成的消息可以根据取决于特定服务属性的单个或组合策略发送，从而极大地方便了服务操作。

公开(公告)号：US08975141B2

公开(公告)日：2015-03-10

申请号：US13563202

申请日：2012-07-31

Applicant: Andy C. Wei ,  Bin Yang ,  Francis M. Tambwe

Inventor： Andy C. Wei ,  Bin Yang ,  Francis M. Tambwe

IPC: H01L21/336

CPC classification number: H01L27/11 ,  H01L21/823821 ,  H01L29/7843

Abstract: A method for fabricating a dual-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure, depositing a low-resistance material layer over the first workfunction material layer, and etching the low-resistance material layer and the first workfunction material layer from a portion of the FinFET structure. The method further includes depositing a second workfunction material in a layer in a plurality of trenches of the portion and depositing a stress material layer over the second workfunction material layer.

Abstract translation: 一种用于制造双功函数FinFET结构的方法，包括在FinFET结构的多个沟槽中的层中沉积第一功函数材料，在第一功函数材料层上沉积低电阻材料层，以及蚀刻低电阻材料 层和来自FinFET结构的一部分的第一功函数材料层。 该方法还包括在该部分的多个沟槽中的层中沉积第二功函数材料，并在第二功函数材料层上沉积应力材料层。

公开(公告)号：US08956948B2

公开(公告)日：2015-02-17

申请号：US12783914

申请日：2010-05-20

Applicant: Yanxiang Liu ,  Bin Yang

Inventor： Yanxiang Liu ,  Bin Yang

IPC: H01L21/76 ,  H01L21/762

CPC classification number: H01L21/76229 ,  H01L21/76237

Abstract: A semiconductor device is formed with extended STI regions. Embodiments include implanting oxygen under STI trenches prior to filling the trenches with oxide and subsequently annealing. An embodiment includes forming a recess in a silicon substrate, implanting oxygen into the silicon substrate below the recess, filling the recess with an oxide, and annealing the oxygen implanted silicon. The annealed oxygen implanted silicon extends the STI region, thereby reducing leakage current between N+ diffusions and N-well and between P+ diffusions and P-well, without causing STI fill holes and other defects.

Abstract translation: 半导体器件形成有延伸的STI区域。 实施例包括在用氧化物填充沟槽并随后退火之前在STI沟槽下注入氧气。 一个实施例包括在硅衬底中形成凹槽，将氧注入到凹陷下方的硅衬底中，用氧化物填充凹槽，并对氧注入的硅进行退火。 退火的氧注入硅延伸STI区域，从而减少N +扩散与N阱之间以及P +扩散与P阱之间的漏电流，而不会引起STI填充孔和其他缺陷。

公开(公告)号：US08936978B2

公开(公告)日：2015-01-20

申请号：US12955388

申请日：2010-11-29

Applicant: Wilfried Haensch ,  Christian Lavoie ,  Christine Qiqing Ouyang ,  Xiaoyan Shao ,  Paul M. Solomon ,  Zhen Zhang ,  Bin Yang

Inventor： Wilfried Haensch ,  Christian Lavoie ,  Christine Qiqing Ouyang ,  Xiaoyan Shao ,  Paul M. Solomon ,  Zhen Zhang ,  Bin Yang

IPC: H01L29/06 ,  H01L29/417

CPC classification number: H01L29/0673 ,  H01L21/823814 ,  H01L29/41791

Abstract: A multigate structure which comprises a semiconductor substrate; an ultra-thin silicon or carbon bodies of less than 20 nanometers thick located on the substrate; an electrolessly deposited metallic layer selectively located on the side surfaces and top surfaces of the ultra-thin silicon or carbon bodies and selectively located on top of the multigate structures to make electrical contact with the ultra-thin silicon or carbon bodies and to minimize parasitic resistance, and wherein the ultra-thin silicon or carbon bodies and metallic layer located thereon form source and drain regions is provided along with a process to fabricate the structure.

公开(公告)号：US08861034B2

公开(公告)日：2014-10-14

申请号：US14128351

申请日：2012-05-18

Applicant: Haifeng Li ,  Bin Yang

Inventor： Haifeng Li ,  Bin Yang

IPC: G06K15/00 ,  H04N1/405 ,  H04N1/40 ,  G06K15/02

CPC classification number: G06K15/1881 ,  H04N1/40087 ,  H04N1/4055

Abstract: The present application discloses a method and an apparatus for generating multi-bit depth halftone amplitude-modulation dots. The method may comprise: scanning an input image to obtain a value of a current pixel Pxy, where x represents a lateral position index of the current pixel, and y represents a vertical position index of the current pixel; obtaining gj from a preset multi-bit depth threshold matrix G by starting with i=0, and determining if Pxy

Abstract translation: 本申请公开了一种用于产生多位深度半色调幅度调制点的方法和装置。 该方法可以包括：扫描输入图像以获得当前像素Pxy的值，其中x表示当前像素的横向位置索引，y表示当前像素的垂直位置索引; 通过以i = 0开始从预设的多位深度阈值矩阵G获得gj，并且确定Pxy

公开(公告)号：US20130335785A1

公开(公告)日：2013-12-19

申请号：US13976335

申请日：2011-12-27

Applicant: Wenfa Qi ,  Shuchang Han ,  Gaoyang Wang ,  Lidong Wang ,  Bin Yang

Inventor： Wenfa Qi ,  Shuchang Han ,  Gaoyang Wang ,  Lidong Wang ,  Bin Yang

IPC: G06F3/12 ,  G06K15/00

CPC classification number: G06F3/1238 ,  G06F3/1222 ,  G06F3/1288 ,  G06F3/1289 ,  G06K15/4095 ,  H04L63/102 ,  H04L63/20 ,  H04L67/125 ,  H04L67/34

Abstract: Disclosed is a method and system for document printing management and control and source tracking. A printing management service program runs at a server end. A printing monitoring service program runs at a client end. The printing management service program saves client end information, monitors and manages a client end computer, sets a printing management policy, and delivers operation instructions to the client end. The printing monitoring service program collects the client end information, sends the client end information to the server end, and executes the operation instruction.

Abstract translation: 公开了一种用于文件打印管理和控制和源跟踪的方法和系统。 打印管理服务程序在服务器端运行。 打印监控服务程序在客户端运行。 打印管理服务程序保存客户端信息，监控和管理客户端计算机，设置打印管理策略，并向客户端传送操作指令。 打印监控服务程序收集客户端信息，将客户端信息发送到服务器端，并执行操作指令。

公开(公告)号：US20130241008A1

公开(公告)日：2013-09-19

申请号：US13611736

申请日：2012-09-12

Applicant: Kisik Choi ,  Christian Lavoie ,  Paul M. Solomon ,  Bin Yang ,  Zhen Zhang

Inventor： Kisik Choi ,  Christian Lavoie ,  Paul M. Solomon ,  Bin Yang ,  Zhen Zhang

IPC: H01L29/78

CPC classification number: H01L29/7833 ,  H01L21/28512 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66545

Abstract: A device includes a gate stack formed over a channel in a semiconductor substrate. The gate stack includes a layer of gate insulator material, a layer of gate metal overlying the layer of gate insulator material, and a layer of contact metal overlying the layer band edge gate metal. The device further includes source and drain contacts adjacent to the channel. The source and drain contacts each include a layer of the gate metal that overlies and is in direct electrical contact with a doped region of the semiconductor substrate, and a layer of contact metal that overlies the layer of gate metal.

Abstract translation: 一种器件包括形成在半导体衬底中的沟道上方的栅叠层。 栅极堆叠包括栅极绝缘体材料层，覆盖栅极绝缘体材料层的栅极金属层和覆盖层带边缘栅极金属的接触金属层。 该装置还包括邻近通道的源极和漏极接触。 源极和漏极触点各自包括覆盖并与半导体衬底的掺杂区域直接电接触的栅极金属层以及覆盖在栅极金属层上的接触金属层。