Abstract:
AAV expression vectors and recombinant virions produced using these vectors, which include genes coding for enzymes defective or missing in lysosomal storage disorders, are described. These recombinant AAV virions are useful in the treatment of a variety of lysosomal storage disorders and the methods described herein provide for long-term, sustained expression of the defective or missing enzyme.
Abstract:
In a method for error correcting a data signal that is transmitted via a channel and contains data blocks with associated error checking information, the data signal is first equalized, with calculated soft-bit information. In a subsequent step, the error checking information is evaluated with respect to the data block. If the evaluation of the error checking information shows that a single bit error is present in one message bit, the single bit error is corrected only when a condition that is dependent on the soft-bit information is satisfied.
Abstract:
The disclosed invention relates to a process for making a multiphase mixture, comprising: flowing a first fluid stream through a process microchannel, the first fluid stream comprising at least one liquid and/or at least one gas, the process microchannel having an apertured section; flowing a second fluid stream through the apertured section into the process microchannel in contact with the first fluid stream to form the multiphase mixture, the second fluid stream comprising at least one gas and/or at least one microbody-forming material, the first fluid stream forming a continuous phase in the multiphase mixture, the second fluid stream forming a discontinuous phase dispersed in the continuous phase.
Abstract:
A method for channel equalization of received data includes steps of: receiving the received data in a received data packet; calculating filter setting coefficients for an input filter and calculating equalizer setting coefficients for an equalizer; setting the input filter using the filter setting coefficients and setting the equalizer using the equalizer setting coefficients; equalizing the received data using the input filter and using the equalizer; determining channel parameters for the transmission channel from the received data Xk; storing the channel parameters in a data field; and performing the step of calculating the filter setting coefficients for the input filter and calculating the equalizer setting coefficients for the equalizer by performing a GIVENS rotation of the data field.
Abstract:
A method for increasing bulkiness of reconstituted tobacco by adding tobacco stem particles includes (1) pulverizing a first portion of tobacco stems to obtain tobacco stem particles; (2) classifying the tobacco stem particles with mesh sieves and selecting the tobacco stem particles with a predetermined mesh size; (3) extracting a second portion of the tobacco stems with water and grinding to form a tobacco stem slurry that has a beating degree of 12-14° SR, and mixing the tobacco stem slurry with tobacco leaves in a weight ratio of 6:4 and grinding to obtaining a tobacco slurry that has a beating degree of 18-20° SR; (4) cutting plant fiber pulp boards and dispersing in water to form a plant fiber pulp; (5) preparing a filler solution that contains 10 wt % of a mineral filler; (6) mixing, rolling and drying to obtain the reconstituted tobacco.
Abstract:
Methods for controlling series or series-parallel reactions are described. Novel microchannel apparatus having mesoporous structures adjacent to bulk flow paths are described. Methods of synthesizing formaldehyde from methanol are also described.
Abstract:
A method for forming silicide contacts includes forming a dielectric layer on a gate spacer, a gate stack, and a first semiconductor layer. The first semiconductor layer comprises source/drain regions. Contact trenches are formed in the dielectric layer so as to expose at least a portion of the source/drain regions. A second semiconductor layer is formed within the contact trenches. A metallic layer is formed on the second semiconductor layer. An anneal is performed to form a silicide region between the second semiconductor layer and the metallic layer. A conductive contact layer is formed on the metallic layer or the silicide region.
Abstract:
The disclosure provides a match-rule based service message transfer method and system in the IPTV, to address the problems in the IPTV message system of message storing and backlog, low push efficiency and poor usability. In the disclosure, match fields are arranged in a set-top box and a service message to be sent, the service message is sent by means of broadcast or multicast, the set-top box performs matching for the match fields based on the match rule, and filters the message. The disclosure avoids sending a service message by means of unicast, increases the push efficiency and can greatly reduce the storage load of offline messages in a message system. The formed message may be sent according to a single or combined policy which depends on a specific service attribute, thereby greatly facilitating the service operation.
Abstract:
A method for fabricating a dual-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure, depositing a low-resistance material layer over the first workfunction material layer, and etching the low-resistance material layer and the first workfunction material layer from a portion of the FinFET structure. The method further includes depositing a second workfunction material in a layer in a plurality of trenches of the portion and depositing a stress material layer over the second workfunction material layer.
Abstract:
A semiconductor device is formed with extended STI regions. Embodiments include implanting oxygen under STI trenches prior to filling the trenches with oxide and subsequently annealing. An embodiment includes forming a recess in a silicon substrate, implanting oxygen into the silicon substrate below the recess, filling the recess with an oxide, and annealing the oxygen implanted silicon. The annealed oxygen implanted silicon extends the STI region, thereby reducing leakage current between N+ diffusions and N-well and between P+ diffusions and P-well, without causing STI fill holes and other defects.