公开(公告)号：US11177289B2

公开(公告)日：2021-11-16

申请号：US16662394

申请日：2019-10-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Tatsuya Takahashi

IPC: H01L27/12 ,  H01L29/45 ,  G02F1/1368 ,  H01L29/786 ,  H01L21/02

Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

公开(公告)号：US11170726B2

公开(公告)日：2021-11-09

申请号：US15685273

申请日：2017-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Hiroyuki Miyake

IPC: G09G3/36 ,  G06F3/041 ,  G06F3/042 ,  G06F3/044 ,  G02F1/1345

Abstract: The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.

公开(公告)号：US11133078B2

公开(公告)日：2021-09-28

申请号：US16780027

申请日：2020-02-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki Sakakura ,  Yuugo Goto ,  Hiroyuki Miyake ,  Daisuke Kurosaki

IPC: G11C19/28 ,  G11C19/18 ,  H01L27/12 ,  H01L27/02

Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.

公开(公告)号：US11081050B2

公开(公告)日：2021-08-03

申请号：US16854029

申请日：2020-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiko Inoue ,  Hiroyuki Miyake

IPC: G09G3/3233 ,  H01L27/12 ,  G09G3/3291

Abstract: A light-emitting device in which variation in luminance of pixels is suppressed. A light-emitting device includes at least a transistor, a first wiring, a second wiring, a first switch, a second switch, a third switch, a fourth switch, a capacitor, and a light-emitting element. The first wiring and a first electrode of the capacitor are electrically connected to each other through the first switch. A second electrode of the capacitor is connected to a first terminal of the transistor. The second wiring and a gate of the transistor are electrically connected to each other through the second switch. The first electrode of the capacitor and the gate of the transistor are electrically connected to each other through the third switch. The first terminal of the transistor and an anode of the light-emitting element are electrically connected to each other through the fourth switch.

公开(公告)号：US10950633B2

公开(公告)日：2021-03-16

申请号：US16834308

申请日：2020-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake

IPC: G09G3/3233 ,  G09G3/3275 ,  H01L27/06 ,  H01L27/12 ,  H01L33/62 ,  H01L27/32

Abstract: An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.

公开(公告)号：US10944281B2

公开(公告)日：2021-03-09

申请号：US15274323

申请日：2016-09-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei Momo ,  Hiroyuki Miyake ,  Kei Takahashi

IPC: H02J7/00 ,  H01M10/0525 ,  H01M10/42 ,  H01M10/46 ,  H01M10/44 ,  H02J50/80 ,  H02J50/20 ,  H02J50/12 ,  H01M10/0583 ,  H01M10/0585 ,  H01M4/96 ,  H01M2/16 ,  H01M10/02 ,  H01M10/04 ,  H01M4/02 ,  H02J7/02 ,  H02J7/35

Abstract: A decrease in the capacity of a power storage device is inhibited by adjusting or reducing imbalance in the amount of inserted and extracted carrier ions between positive and negative electrodes, which is caused by decomposition of an electrolyte solution of the negative electrode. Further, the capacity of the power storage device can be restored. Furthermore, impurities in the electrolyte solution can be decomposed with the use of the third electrode. A power storage device including positive and negative electrodes, an electrolyte, and a third electrode is provided. The third electrode has an adequate electrostatic capacitance. The third electrode can include a material with a large surface area. In addition, a method for charging the power storage device including the steps of performing charging by applying a current between the positive and negative electrodes, and performing additional applying a current between the third electrode and the negative electrode is provided.

公开(公告)号：US10943547B2

公开(公告)日：2021-03-09

申请号：US15819236

申请日：2017-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kouhei Toyotaka

IPC: G09G3/34 ,  G09G3/36 ,  G09G3/20

Abstract: A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order.

公开(公告)号：US10930683B2

公开(公告)日：2021-02-23

申请号：US16413917

申请日：2019-05-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsushi Umezaki ,  Hiroyuki Miyake

IPC: H01L27/12 ,  G09G3/36 ,  G11C19/28 ,  G09G3/20 ,  H01L27/02 ,  G09G3/3266

Abstract: To suppress fluctuation in the threshold voltage of a transistor, to reduce the number of connections of a display panel and a driver IC, to achieve reduction in power consumption of a display device, and to achieve increase in size and high definition of the display device. A gate electrode of a transistor which easily deteriorates is connected to a wiring to which a high potential is supplied through a first switching transistor and a wiring to which a low potential is supplied through a second switching transistor; a clock signal is input to a gate electrode of the first switching transistor; and an inverted clock signal is input to a gate electrode of the second switching transistor. Thus, the high potential and the low potential are alternately applied to the gate electrode of the transistor which easily deteriorates.

公开(公告)号：US10885861B2

公开(公告)日：2021-01-05

申请号：US16190205

申请日：2018-11-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki Miyake

IPC: G06F3/038 ,  G09G3/36 ,  G11C19/28 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1362

Abstract: A scan line to which a selection signal or a non-selection signal is input from its end, and a transistor in which a clock signal is input to a gate, the non-selection signal is input to a source, and a drain is connected to the scan line are provided. A signal input to the end of the scan line is switched from the selection signal to the non-selection signal at the same or substantially the same time as the transistor is turned on. The non-selection signal is input not only from one end but also from both ends of the scan line. This makes it possible to inhibit the potentials of portions in the scan line from being changed at different times.

公开(公告)号：US10797054B2

公开(公告)日：2020-10-06

申请号：US15292362

申请日：2016-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka Shionoiri ,  Hiroyuki Miyake ,  Kiyoshi Kato

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/105 ,  H01L27/1156 ,  H01L27/12 ,  H01L27/13 ,  H01L27/115 ,  H01L29/786 ,  G11C16/04

Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.