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公开(公告)号：US11372592B1
公开(公告)日：2022-06-28
申请号：US17168119
申请日：2021-02-04
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang
Abstract: The present invention provides a memory controller configured to access a plurality of channels, wherein each of the channels includes a plurality flash memory chips, and the memory controller includes a flash translation layer and a plurality of control modules. The flash translation layer is configured to generate commands with corresponding physical addresses of at least one of the channels. The plurality of control modules are connected to the plurality of channels, respectively, and each of the control modules operates independently to receive the corresponding command with the corresponding physical address from the flash translation layer, to access the flash memory chips within the corresponding channels.
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172.发明申请公开(公告)号：US20220093191A1
公开(公告)日：2022-03-24
申请号：US17030330
申请日：2020-09-23
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang
Abstract: The present invention provides a method for access a flash memory module, wherein the method includes the steps of: sending a read command to the flash memory module to read a plurality of memory cells of at least one word line of the flash memory module by using a plurality of read voltages, wherein each memory cell is configured to store a plurality of bits, each memory cell has a plurality of states, the states are used to indicate different combinations of the plurality of bits; obtaining readout information from the flash memory module; analyzing the readout information to determine numbers of the states of the memory cells; determining if the memory cells are balance or unbalance according the numbers of the states of the memory cells to generate a determination result; and referring to the determination result to adjust voltage levels of the plurality of read voltages.
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公开(公告)号：US11256435B2
公开(公告)日：2022-02-22
申请号：US17106192
申请日：2020-11-30
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang , Wen-Long Wang
Abstract: A method for performing data-accessing management in a storage server and associated apparatus such as a host device, a storage device, etc. are provided. The method includes: in response to a client request of writing a first set of data into the storage server, utilizing the host device within the storage server to trigger broadcasting an internal request corresponding to the client request toward each storage device of a plurality of storage devices within the storage server; and in response to the internal request corresponding to the client request, utilizing said each storage device of the plurality of storage devices to search for the first set of data in said each storage device to determine whether the first set of data has been stored in any storage device, for controlling the storage server completing the client request without duplication of the first set of data within the storage server.
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公开(公告)号：US11144390B2
公开(公告)日：2021-10-12
申请号：US16787038
申请日：2020-02-11
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang
Abstract: An exemplary method for reading data stored in a flash memory includes: selecting an initial gate voltage combination from a plurality of predetermined gate voltage combination options; controlling a plurality of memory units in the flash memory according to the initial gate voltage combination, and reading a plurality of bit sequences; performing a codeword error correction upon the plurality of bit sequences, and determining if the codeword error correction successful; if the codeword error correction is not successful, determining an electric charge distribution parameter; determining a target gate voltage combination corresponding to the electric charge distribution parameter by using a look-up table; and controlling the plurality of memory units to read a plurality of updated bit sequences according to the target gate voltage combination.
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公开(公告)号：US11139032B2
公开(公告)日：2021-10-05
申请号：US17024718
申请日：2020-09-18
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang
Abstract: A method for reading data stored in a flash memory includes at least the following steps: controlling the flash memory to perform a plurality of read operations upon a plurality of memory cells included in the flash memory; obtaining a plurality of bit sequences read from the memory cells, respectively, wherein the read operations read bits of a predetermined bit order from the memory cells by utilizing different control gate voltage settings; and determining readout information of the memory cells according to binary digit distribution characteristics of the bit sequences.
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Patent Agency Ranking
公开(公告)号：US11099781B2
公开(公告)日：2021-08-24
申请号：US16429057
申请日：2019-06-02
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang
Abstract: The present invention provides an electronic device, wherein the electronic device includes a flash memory module and a flash memory controller. The flash memory module includes at least one flash memory chip, each flash memory chip includes a plurality of blocks, and each block includes a plurality of pages, and the flash memory controller is configured to access the flash memory module. In the operations of the electronic device, when the flash memory controller sends a read command to the flash memory module to ask for data on at least one page, the flash memory module uses a plurality of read voltages to read each memory cell of the at least one page to obtain multi-bit information of each memory cell, and the flash memory module transmits the multi-bit information of each memory cell of the at least one page to the flash memory controller.
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177.发明申请公开(公告)号：US20210257030A1
公开(公告)日：2021-08-19
申请号：US17302422
申请日：2021-05-03
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang
Abstract: A method for reading data stored in a flash memory. The flash memory comprises a plurality of memory cells and each memory cell has a particular threshold voltage. The method includes: obtaining a first threshold voltage distribution representing threshold voltages of a first group of the memory cells; obtaining a second threshold voltage distribution representing threshold voltages of a second group of the memory cells, wherein the second threshold voltage distribution is different from the first threshold voltage distribution, and the first group of the memory cells comprises at least a part of the second group of the memory cells; and controlling the flash memory to perform at least one read operation upon the first group of the memory cells according to the second threshold voltage distribution.
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公开(公告)号：US20210248036A1
公开(公告)日：2021-08-12
申请号：US17242326
申请日：2021-04-28
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang , Hong-Jung Hsu , Jian-Dong Du
Abstract: A flash memory method includes: classifying data into a plurality of groups of data; respectively executing error code encoding to generate first corresponding parity check code to store the groups of data and first corresponding parity check code into flash memory module as first blocks; reading out the groups of data from first blocks; executing error correction and de-randomize operation upon read out data to generate de-randomized data; executing randomize operation upon de-randomized data according to a set of seeds to generate randomized data; performing error code encoding upon randomized data to generate second corresponding parity check code; and, storing randomized data and second corresponding parity check code into flash memory module as second block; a cell of first block is used for storing data of first bit number which is different from second bit number corresponding to a cell of second block.
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公开(公告)号：US11030041B2
公开(公告)日：2021-06-08
申请号：US16828893
申请日：2020-03-24
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang
Abstract: The present invention provides a decoding method of a flash memory controller, wherein the decoding method includes the steps of: reading first data from a flash memory module; decoding the first data, and recording at least one specific address of the flash memory module according to decoding results of the first data, wherein said at least one specific address corresponds to a bit having high reliability errors (HRE) of the first data; reading second data from the flash memory module; and decoding the second data according to said at least one specific address.
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180.发明授权公开(公告)号：US10992322B2
公开(公告)日：2021-04-27
申请号：US16745255
申请日：2020-01-16
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang , Sheng-I Hsu
Abstract: A data storage system includes a processing circuit, a lookup table (LUT), and a decoding circuit. The processing circuit is arranged to receive a first logical block address (LBA) from a host. The LUT is arranged to store a storage address mapping to the first LBA. The decoding circuit is arranged to utilize the storage address to read storage data from a storing circuit, and decode a first data sector in the storage data according to an error checking and correcting code in the storage data, and the first data sector at least comprises a second LBA.
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