公开(公告)号：US20130288426A1

公开(公告)日：2013-10-31

申请号：US13865344

申请日：2013-04-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kengo Akimoto

IPC: H01L29/66

CPC classification number: H01L29/66765 ,  H01L27/1156 ,  H01L27/11807 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/127 ,  H01L29/7869

Abstract: In a semiconductor device in which transistors are formed in a plurality of layers to form a stack structure, a method for manufacturing the semiconductor device formed by controlling the threshold voltage of the transistors formed in the layers selectively is provided. Further, a method for manufacturing the semiconductor device by which oxygen supplying treatment is effectively performed is provided. First oxygen supplying treatment is performed on a first oxide semiconductor film including a first channel formation region of a transistor in the lower layer. Then, an interlayer insulating film including an opening which is formed so that the first channel formation region is exposed is formed over the first oxide semiconductor film and second oxygen supplying treatment is performed on a second oxide semiconductor film including a second channel formation region over the interlayer insulating film and the exposed first channel formation region.

Abstract translation: 在其中以多层形成晶体管以形成堆叠结构的半导体器件中，提供了通过选择性地控制形成在层中的晶体管的阈值电压而形成的制造半导体器件的方法。 此外，提供了一种用于制造有效执行氧气供应处理的半导体器件的方法。 在包括下层的晶体管的第一沟道形成区域的第一氧化物半导体膜上进行第一氧供给处理。 然后，在第一氧化物半导体膜的上方形成包括形成为露出第一沟道形成区域的开口的层间绝缘膜，在第二氧化物半导体膜上进行第二氧供给处理，该第二氧化物半导体膜包括第二沟道形成区域 层间绝缘膜和暴露的第一通道形成区域。

公开(公告)号：US20130075723A1

公开(公告)日：2013-03-28

申请号：US13671638

申请日：2012-11-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/78696

Abstract: In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

Abstract translation: 在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面 并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。 通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻 可以减少漏电极。