公开(公告)号：US20020151100A1

公开(公告)日：2002-10-17

申请号：US10014880

申请日：2001-12-11

Applicant: STMicroelectronics S.r.l.

Inventor： Salvatore Coffa ,  Luigi Occhipinti

IPC: H01L021/00 ,  H01L021/76 ,  H01L029/82

CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0109 ,  B81C2201/0115 ,  G01L9/0042

Abstract: Abstract of the Disclosure A monolithically integrated pressure sensor is produced through micromechanical surface structure definition techniques. A microphone cavity in the semiconductor substrate may be monolithically formed by plasma etching the front side or the back side of the silicon wafer to cut a plurality of trenches or holes deep enough to extend for at least part of its thickness into a doped buried layer of opposite type of conductivity of the substrate and of the epitaxial layer grown over it. The method may also include electrochemically etching through such trenches, the silicon of the buried layer with an electrolytic solution suitable for selectively etching the doped silicon of the opposite type of conductivity, thereby making the silicon of the buried layer porous. The method may also include oxidizing and leaching away the silicon so made porous.

Abstract translation: 公开的摘要通过微机械表面结构定义技术制造单片集成的压力传感器。 半导体衬底中的麦克风腔可以通过等离子体蚀刻硅晶片的前侧或背面来整体地形成，以切割多个深度足够的沟槽或孔，以使其厚度的至少一部分延伸到 衬底和在其上生长的外延层的相反类型的导电性。 该方法还可以包括通过这样的沟槽电化学蚀刻掩埋层的硅，其中电解溶液适于选择性地蚀刻具有相反导电性的掺杂硅，从而使掩埋层的硅多孔化。 该方法还可以包括氧化和浸出如此制成的多孔的硅。

公开(公告)号：US20020139171A1

公开(公告)日：2002-10-03

申请号：US10017772

申请日：2001-10-29

Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC: G01N007/00

CPC classification number: G01N25/68 ,  B81B3/0081 ,  B81B2203/0127 ,  B81C2201/0115 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A micromechanical component having a substrate and a diaphragm positioned on the substrate. Underneath the diaphragm a region made of porous material is provided, which mechanically supports the diaphragm and thermally insulates it.

Abstract translation: 具有基板和位于基板上的隔膜的微机械部件。 在隔膜下方设置有由多孔材料制成的区域，该区域机械地支撑隔膜并将其热绝缘。

公开(公告)号：US06277712B1

公开(公告)日：2001-08-21

申请号：US09540552

申请日：2000-03-31

Applicant: Sung-gyu Kang ,  Ki Bang Lee ,  Jae-joon Choi ,  Hee-moon Jeong

Inventor： Sung-gyu Kang ,  Ki Bang Lee ,  Jae-joon Choi ,  Hee-moon Jeong

IPC: H01L21322

CPC classification number: G01P15/0802 ,  B81C1/0019 ,  B81C1/00507 ,  B81C2201/0115 ,  H01L21/76251 ,  H01L21/76262

Abstract: A multilayered wafer with a thick sacrificial layer, which is obtained by forming a sacrificial layer of oxidized porous silicon or porous silicon and growing an epitaxial polysilicon layer on the sacrificial layer, and a fabrication method thereof are provided. The multilayered wafer with a thick sacrificial layer adopts a porous silicon layer or an oxidized porous silicon layer as a sacrificial layer such that a sufficient gap can be obtained between a substrate and a suspension structure upon the manufacture of the suspension structure of a semiconductor actuator or a semiconductor inertia sensor. Also, in a fabrication method of the wafer according to the present invention, a p+-type or n+-type wafer doped at a high concentration is prepared for, and then a thick porous silicon layer can be obtained simply by anodic-bonding the surface of the wafer. Also, when polysilicon is grown on a porous silicon layer by an epitaxial process, it is grown faster than when single crystal silicon is grown.

Abstract translation: 提供了通过在牺牲层上形成氧化的多孔硅或多孔硅的牺牲层并生长外延多晶硅层而获得的具有厚牺牲层的多层晶片及其制造方法。 具有厚牺牲层的多层晶片采用多孔硅层或氧化多孔硅层作为牺牲层，使得在制造半导体致动器的悬架结构时可在衬底和悬架结构之间获得足够的间隙，或者 半导体惯性传感器。 此外，在根据本发明的晶片的制造方法中，制备以高浓度掺杂的p +型或n +型晶片，然后可以简单地通过阳极结合表面获得厚的多孔硅层 的晶片。 而且，当通过外延工艺在多孔硅层上生长多晶硅时，其生长比单晶硅生长时更快。

公开(公告)号：US5659138A

公开(公告)日：1997-08-19

申请号：US538697

申请日：1995-10-03

Applicant: Hitoshi Iwata ,  Makoto Murate

Inventor： Hitoshi Iwata ,  Makoto Murate

IPC: B81B3/00 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84

CPC classification number: B81C1/00047 ,  G01P15/0802 ,  G01P15/123 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81C2201/0115 ,  G01P2015/0828 ,  Y10S438/96

Abstract: A surface type acceleration sensor includes a p-type single crystal silicon base plate, a cantilever functioning as a cantilever structure portion, and a plurality of strain gauges. The cantilever is disposed in a recess portion formed on the front face of the p-type single crystal silicon base plate so that the cantilever can be displaced in the upward and downward direction. The cantilever includes an epitaxial growth layer principally made of n-type single crystal silicon. The strain gauge is made of p-type silicon and formed on an upper face of the base end portion of the cantilever.

Abstract translation: 表面型加速度传感器包括p型单晶硅基板，用作悬臂结构部分的悬臂和多个应变计。 悬臂设置在形成在p型单晶硅基板的正面上的凹部中，使得悬臂可以在向上和向下的方向上移位。 悬臂包括主要由n型单晶硅制成的外延生长层。 应变片由p型硅制成，并形成在悬臂的基端部的上表面上。