公开(公告)号：US06362079B1

公开(公告)日：2002-03-26

申请号：US09341323

申请日：1999-07-09

申请人： Hitoshi Iwata ,  Makoto Murate

发明人： Hitoshi Iwata ,  Makoto Murate

IPC分类号： H01L21326

CPC分类号： H01L21/02203 ,  G01P15/0802 ,  H01L21/02238 ,  H01L21/02258 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/31675 ,  Y10S438/96 ,  Y10S438/962

摘要： A first p-type silicon layer (3) is formed as a buried layer in a p-type single crystal silicon substrate (2), and an n-type silicon layer (4) is formed on the upper side of the silicon substrate (2). A second p-type silicon layer (5) for forming an opening is defined in the n-type silicon layer (4), and a metal protecting film (14) is formed on the upper side of the n-type silicon layer (4). An electrode layer (18) is formed on the rear side of the silicon substrate (2) via an oxide film (17). The electrode layer (18) and the silicon substrate (2) are electrically connected to each other via a connecting opening (17a) at portions aligned with the first p-type silicon layer (3). After a positive terminal and a negative terminal of a DC power source (V) are connected to the electrode layer (18) and to a counter electrode (11) respectively, a voltage is applied between the electrode layer (18) and the counter electrode (11) to carry out anodization.

摘要翻译： 在p型单晶硅衬底（2）中形成第一p型硅层（3）作为掩埋层，并且在硅衬底的上侧形成n型硅层（4） 2）。 在n型硅层（4）中限定用于形成开口的第二p型硅层（5），在n型硅层（4）的上侧形成有金属保护膜（14） ）。 通过氧化膜（17）在硅衬底（2）的后侧形成电极层（18）。 电极层（18）和硅衬底（2）在与第一p型硅层（3）对准的部分处经由连接开口（17a）彼此电连接。 在直流电源（V）的正端子和负端子分别连接到电极层（18）和对电极（11）之后，在电极层（18）和对电极 （11）进行阳极氧化处理。

公开(公告)号：US5659138A

公开(公告)日：1997-08-19

申请号：US538697

申请日：1995-10-03

申请人： Hitoshi Iwata ,  Makoto Murate

发明人： Hitoshi Iwata ,  Makoto Murate

IPC分类号： B81B3/00 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84

CPC分类号： B81C1/00047 ,  G01P15/0802 ,  G01P15/123 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81C2201/0115 ,  G01P2015/0828 ,  Y10S438/96

摘要： A surface type acceleration sensor includes a p-type single crystal silicon base plate, a cantilever functioning as a cantilever structure portion, and a plurality of strain gauges. The cantilever is disposed in a recess portion formed on the front face of the p-type single crystal silicon base plate so that the cantilever can be displaced in the upward and downward direction. The cantilever includes an epitaxial growth layer principally made of n-type single crystal silicon. The strain gauge is made of p-type silicon and formed on an upper face of the base end portion of the cantilever.

摘要翻译： 表面型加速度传感器包括p型单晶硅基板，用作悬臂结构部分的悬臂和多个应变计。 悬臂设置在形成在p型单晶硅基板的正面上的凹部中，使得悬臂可以在向上和向下的方向上移位。 悬臂包括主要由n型单晶硅制成的外延生长层。 应变片由p型硅制成，并形成在悬臂的基端部的上表面上。

公开(公告)号：US06617191B1

公开(公告)日：2003-09-09

申请号：US09445124

申请日：1999-12-02

申请人： Hitoshi Iwata ,  Makoto Murate

发明人： Hitoshi Iwata ,  Makoto Murate

IPC分类号： H01L2100

CPC分类号： G01P15/0802 ,  G01P2015/0828 ,  H01L21/3063 ,  Y10S438/96

摘要： An epitaxial growth layer, an oxide film, and a passivation film are formed on a silicon substrate. Except for an opening formed on a part of the passivation film, the upper surface of the passivation film is covered with a metal protective film made of tungsten (W). With the silicon substrate immersed in a high-concentration hydrofluoric aqueous solution, anodization is performed with the silicon substrate as an anode and the metal protective film as a counter electrode.

摘要翻译： 在硅衬底上形成外延生长层，氧化物膜和钝化膜。 除了形成在钝化膜的一部分上的开口之外，钝化膜的上表面被由钨（W）制成的金属保护膜覆盖。 将硅衬底浸入高浓度氢氟酸水溶液中，以硅衬底作为阳极进行阳极氧化，并将金属保护膜用作对电极。

公开(公告)号：US06399410B1

公开(公告)日：2002-06-04

申请号：US09509448

申请日：2000-03-28

申请人： Hitoshi Iwata ,  Makoto Murate

发明人： Hitoshi Iwata ,  Makoto Murate

IPC分类号： H01L2100

CPC分类号： B81C1/005 ,  B81B2201/0235 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01P15/0802

摘要： A method for anodizing silicon substrate includes forming an n-type silicon embedded layer (21) made of n-type silicon on a predetermined area of a first surface of the p-type single crystal silicon substrate (2). N-type silicon layers (4, 6) are formed on the upper surface of the p-type single crystal silicon substrate (2) and on the n-type silicon embedded layer (21). Silicon diffusion layers (5, 7) containing high-concentration p-type impurities are formed on predetermined areas of the n-type silicon layers (4, 6) to contact the n-type silicon embedded layer (21). An electrode layer (13) is formed on the lower surface of the p-type silicon substrate (2). The anode of a DC power source (15) is connected to the electrode layer (13), and the cathode is connected to a counter electrode (23), which is opposed to the p-type silicon substrate (2). A current is intensively applied to an area corresponding to an opening (21a) of the n-type silicon layer (4) in a direction from the lower surface to the upper surface of the p-type single crystal silicon substrate (2), which makes the area porous.

摘要翻译： 一种用于阳极氧化硅衬底的方法包括在p型单晶硅衬底（2）的第一表面的预定区域上形成由n型硅制成的n型硅嵌入层（21）。 在p型单晶硅衬底（2）的上表面和n型硅嵌入层（21）上形成N型硅层（4,6）。 在n型硅层（4,6）的预定区域上形成含有高浓度p型杂质的硅扩散层（5,7），以与n型硅嵌入层（21）接触。 在p型硅衬底（2）的下表面上形成电极层（13）。 直流电源（15）的阳极与电极层（13）连接，阴极与与p型硅基板（2）相对的对置电极（23）连接。 在从p型单晶硅衬底（2）的下表面到上表面的方向上，电流强烈地施加到与n型硅层（4）的开口（21a）相对应的区域， 使得该区域多孔。

公开(公告)号：US5665250A

公开(公告)日：1997-09-09

申请号：US622877

申请日：1996-03-29

申请人： Hitoshi Iwata ,  Makoto Murate

发明人： Hitoshi Iwata ,  Makoto Murate

IPC分类号： B81B3/00 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L21/00

CPC分类号： B81C1/00047 ,  G01P15/0802 ,  G01P15/123 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81C2201/0115 ,  G01P2015/0828 ,  Y10S438/96

摘要： A surface type acceleration sensor includes a p-type single crystal silicon base plate, a cantilever functioning as a cantilever structure portion, and a plurality of strain gauges. The cantilever is disposed in a recess portion formed on the front face of the p-type single crystal silicon base plate so that the cantilever can be displaced in the upward and downward direction. The cantilever includes an epitaxial growth layer principally made of n-type single crystal silicon. The strain gauge is made of p-type silicon and formed on an upper face of the base end portion of the cantilever.

摘要翻译： 表面型加速度传感器包括p型单晶硅基板，用作悬臂结构部分的悬臂和多个应变计。 悬臂设置在形成在p型单晶硅基板的正面上的凹部中，使得悬臂可以在向上和向下的方向上移位。 悬臂包括主要由n型单晶硅制成的外延生长层。 应变片由p型硅制成，并形成在悬臂的基端部的上表面上。

公开(公告)号：US06201285B1

公开(公告)日：2001-03-13

申请号：US09462011

申请日：1999-12-29

申请人： Hitoshi Iwata ,  Masakata Kanbe

发明人： Hitoshi Iwata ,  Masakata Kanbe

IPC分类号： H01L2982

CPC分类号： G01P15/122 ,  G01P1/006 ,  G01P1/02 ,  G01P1/023 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2924/00

摘要： An acceleration sensor with a diaphragm sensor chip has lead frames. One of the lead frames has a die pad. The sensor chip is flexibly adhered to the die pad by adhesive. The sensor chip has a diaphragm. The sensor chip outputs signals in accordance with flexure of the diaphragm. The lead frames are molded by a mold member. The mold member define a space about the sensor chip. The coefficient of linear expansion of the mold member is between 1.4×10−5/° C. and 1.8×10−5/° C., and the modulus of elasticity of the mold member is between 100×103 kg/cm2 and 130×103 kg/cm2. Use of the mold member minimizes the ratio of change of sensitivity due to temperature changes, which improves the temperature characteristics of the sensor.

摘要翻译： 具有隔膜传感器芯片的加速度传感器具有引线框架。 其中一个引线框架有一个管芯焊盘。 传感器芯片通过粘合剂灵活地粘附到管芯焊盘。 传感器芯片有一个隔膜。 传感器芯片根据隔膜的弯曲输出信号。 引线框架由模具构件模制。 模具构件限定关于传感器芯片的空间。 模具构件的线膨胀系数在1.4×10-5 /℃至1.8×10-5 /℃之间，模具构件的弹性模量为100×10 3 kg / cm 2至130×10 3 kg / cm 2。 模具构件的使用使由于温度变化引起的灵敏度变化率降低，这提高了传感器的温度特性。

公开(公告)号：US5982985A

公开(公告)日：1999-11-09

申请号：US915670

申请日：1997-08-21

申请人： Yoshiharu Kawarazaki ,  Yasushi Nishibe ,  Hitoshi Iwata

发明人： Yoshiharu Kawarazaki ,  Yasushi Nishibe ,  Hitoshi Iwata

IPC分类号： E05F15/20 ,  G06F11/00 ,  G06F11/30 ,  H02P1/00 ,  H02P1/06

CPC分类号： G06F11/0757

摘要： The first circuit inputs a clock signal from MICON. The second circuit inputs a clock signal corresponding to the clock signal from the first circuit, and outputs a judgment signal continued for a specified time from the time when the clock signal is inputted. The judgment signal is inputted to the third circuit. A standby signal from MICON is inputted to the third circuit. When MICON is normal, the clock signal properly outputted, and to the AND circuit, the second signal is inputted, and if the standby signal is inputted from MICON with the second signal inputted, it can be judged that the standby signal is properly outputted from the normal MICON. Consequently, when both judgment signal and standby signal are inputted, the third circuit outputs the standby active signal to the first circuit.

摘要翻译： 第一个电路输入MICON的时钟信号。 第二电路输入与来自第一电路的时钟信号相对应的时钟信号，并且从输入时钟信号时起输出从指定时间开始的判断信号。 判断信号被输入到第三电路。 来自MICON的待机信号被输入到第三电路。 当MICON正常时，正确输出时钟信号，并向AND电路输入第二个信号，如果从输入的第二个信号的MICON输入待机信号，则可以判断出待机信号从 正常的MICON。 因此，当输入判断信号和待机信号两者时，第三电路将待机有效信号输出到第一电路。

公开(公告)号：US5723959A

公开(公告)日：1998-03-03

申请号：US613599

申请日：1996-03-11

申请人： Hitoshi Iwata ,  Kanichi Tanaka ,  Shigekazu Yasuda ,  Yasushi Nishibe ,  Kenichi Kinoshita

发明人： Hitoshi Iwata ,  Kanichi Tanaka ,  Shigekazu Yasuda ,  Yasushi Nishibe ,  Kenichi Kinoshita

IPC分类号： H02H7/085 ,  H02K17/34

CPC分类号： H02H7/0851

摘要： A power window driving control device formed of a measuring device which measures time elapsed since closing of a window glass has been designated by a switch, a sensor which detects a completely closed state of the window glass, a current detecting device which detects that current flowing to a motor when the window glass is being closed exceeds a predetermined value, and a driving control device which effects one of stopping the motor and stopping the motor after driving the motor reversely for a predetermined time, in at least one of a first state, in which the current detecting device detects that the current flowing to the motor exceeds the predetermined value and in which the completely closed state of the window glass is not detected by the sensor, and a second state, in which the time elapsed since closing of the window glass was designated exceeds a predetermined time. Even if a foreign object exists on a path of movement of the window glass in a closing direction, the foreign object is not caught between the window glass and a window frame so that stability is guaranteed.

摘要翻译： 由测量窗玻璃关闭后经过的时间的测量装置形成的电动车窗驱动控制装置已由开关，检测窗玻璃的完全关闭状态的传感器指定，检测电流流动的电流检测装置 以及驱动控制装置，该驱动控制装置在第一状态和第二状态中的至少一个中反作用马达驱动马达并停止马达反转预定时间， 其中电流检测装置检测到流过电动机的电流超过预定值，并且其中窗口玻璃的完全关闭状态未被传感器检测到，并且第二状态，其中从关闭 指定窗玻璃超过预定时间。 即使异物存在于窗玻璃在关闭方向的移动路径上，异物也不会夹在窗玻璃和窗框之间，从而保证了稳定性。

公开(公告)号：US5547216A

公开(公告)日：1996-08-20

申请号：US377936

申请日：1995-01-25

申请人： Hitoshi Iwata ,  Tatsuya Ishida

发明人： Hitoshi Iwata ,  Tatsuya Ishida

IPC分类号： G01L9/00 ,  B60J5/04 ,  B60R21/01 ,  B60R21/16 ,  B60R21/32

CPC分类号： B60R21/0136 ,  B60J5/042

摘要： A crush sensor has a crush box and a pressure sensor. The crush box is disposed between a vehicle-door outer panel and a door inner member which make up a vehicle door, such that a pressure-receiving surface of the crush box, which has a predetermined area, is opposed to the vehicle-door outer panel, the crush box being formed in a semi-sealed state. The pressure sensor detects the internal pressure of the crush box and outputs an electrical signal proportional to a detected value. Since the pressure sensor is capable of obtaining data corresponding to the crushing speed and the amount of crush by detecting the internal pressure of the crush box, an effect equivalent to that obtained by detecting the crushing speed and the amount of crush can be obtained with a simple arrangement without directly detecting them.

摘要翻译： 压碎传感器具有压碎盒和压力传感器。 粉碎箱配置在构成车门的车门外板和门内部件之间，使得具有预定区域的粉碎箱的受压面与车门外侧相对 该碎片箱形成为半密封状态。 压力传感器检测粉碎箱的内部压力，并输出与检测值成比例的电信号。 由于压力传感器能够通过检测粉碎箱的内部压力来获得与破碎速度和粉碎量相对应的数据，因此可以获得与通过检测破碎速度和粉碎量获得的效果相当的效果 简单的安排，无需直接检测。

公开(公告)号：US6140739A

公开(公告)日：2000-10-31

申请号：US318488

申请日：1999-05-25

申请人： Fumihito Arai ,  Toshio Fukuda ,  Koichi Itoigawa ,  Hitoshi Iwata

发明人： Fumihito Arai ,  Toshio Fukuda ,  Koichi Itoigawa ,  Hitoshi Iwata

IPC分类号： G01C19/56 ,  G01C19/5642 ,  H01L41/08 ,  H01L41/09

CPC分类号： G01C19/5642

摘要： An oscillatory gyroscope having an improved detecting sensitivity. The oscillatory gyroscope includes an elastic metal body in the form of a rectangular column having first to fourth surfaces. The elastic metal body includes a distal portion having a distal through hole extending from the second surface to the fourth surface and a proximal portion having a second through hole extending from the first surface to the third surface. Two first ferroelectric substance films are provided on the first and third surfaces in the distal portion. Two second ferroelectric substance films are provided over the second and fourth surfaces in the proximal portion. First and second electrodes are provided on each of the first ferroelectric substance films, and third and fourth electrodes are provided on the respective second ferroelectric substance films. Voltages of reverse polarities are applied to the first and second electrodes. The positions of the first and second electrodes on the first surface are reversed with respect to those of the third surface.

摘要翻译： 具有改进的检测灵敏度的振荡陀螺仪。 振荡陀螺仪包括具有第一至第四表面的矩形柱形式的弹性金属体。 弹性金属体包括具有从第二表面延伸到第四表面的远端通孔的远侧部分和具有从第一表面延伸到第三表面的第二通孔的近端部分。 两个第一铁电物质膜设置在远端部分的第一和第三表面上。 两个第二铁电物质膜设置在近端部分的第二和第四表面上。 第一和第二电极设置在每个第一铁电物质膜上，第三和第四电极设置在各自的第二铁电物质膜上。 反向极性的电压被施加到第一和第二电极。 第一和第二电极在第一表面上的位置相对于第三表面反转。