公开(公告)号：US5665250A

公开(公告)日：1997-09-09

申请号：US622877

申请日：1996-03-29

申请人： Hitoshi Iwata ,  Makoto Murate

发明人： Hitoshi Iwata ,  Makoto Murate

IPC分类号： B81B3/00 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L21/00

CPC分类号： B81C1/00047 ,  G01P15/0802 ,  G01P15/123 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81C2201/0115 ,  G01P2015/0828 ,  Y10S438/96

摘要： A surface type acceleration sensor includes a p-type single crystal silicon base plate, a cantilever functioning as a cantilever structure portion, and a plurality of strain gauges. The cantilever is disposed in a recess portion formed on the front face of the p-type single crystal silicon base plate so that the cantilever can be displaced in the upward and downward direction. The cantilever includes an epitaxial growth layer principally made of n-type single crystal silicon. The strain gauge is made of p-type silicon and formed on an upper face of the base end portion of the cantilever.

摘要翻译： 表面型加速度传感器包括p型单晶硅基板，用作悬臂结构部分的悬臂和多个应变计。 悬臂设置在形成在p型单晶硅基板的正面上的凹部中，使得悬臂可以在向上和向下的方向上移位。 悬臂包括主要由n型单晶硅制成的外延生长层。 应变片由p型硅制成，并形成在悬臂的基端部的上表面上。

公开(公告)号：US06586691B2

公开(公告)日：2003-07-01

申请号：US09896571

申请日：2001-06-29

申请人： Kouichi Itoigawa ,  Hitoshi Muraki ,  Makoto Murate

发明人： Kouichi Itoigawa ,  Hitoshi Muraki ,  Makoto Murate

IPC分类号： H01H3502

CPC分类号： H01H35/14 ,  G01P2015/0831 ,  H01H1/0036

摘要： An acceleration switch that improves detection sensitivity without being enlarged. The acceleration switch includes a switch body, a fixed electrode arranged in the switch body, and a movable weight arranged in the switch body. The movable weight is displaced when subjected to acceleration. The movable weight includes a movable electrode that contacts the fixed electrode when the movable weight is displaced, and a pair of beams connecting the movable weight and the switch body. The beams pivotally support the movable weight and extend into recesses formed in the movable weight.

公开(公告)号：US06617191B1

公开(公告)日：2003-09-09

申请号：US09445124

申请日：1999-12-02

申请人： Hitoshi Iwata ,  Makoto Murate

发明人： Hitoshi Iwata ,  Makoto Murate

IPC分类号： H01L2100

CPC分类号： G01P15/0802 ,  G01P2015/0828 ,  H01L21/3063 ,  Y10S438/96

摘要： An epitaxial growth layer, an oxide film, and a passivation film are formed on a silicon substrate. Except for an opening formed on a part of the passivation film, the upper surface of the passivation film is covered with a metal protective film made of tungsten (W). With the silicon substrate immersed in a high-concentration hydrofluoric aqueous solution, anodization is performed with the silicon substrate as an anode and the metal protective film as a counter electrode.

摘要翻译： 在硅衬底上形成外延生长层，氧化物膜和钝化膜。 除了形成在钝化膜的一部分上的开口之外，钝化膜的上表面被由钨（W）制成的金属保护膜覆盖。 将硅衬底浸入高浓度氢氟酸水溶液中，以硅衬底作为阳极进行阳极氧化，并将金属保护膜用作对电极。

公开(公告)号：US06399410B1

公开(公告)日：2002-06-04

申请号：US09509448

申请日：2000-03-28

申请人： Hitoshi Iwata ,  Makoto Murate

发明人： Hitoshi Iwata ,  Makoto Murate

IPC分类号： H01L2100

CPC分类号： B81C1/005 ,  B81B2201/0235 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01P15/0802

摘要： A method for anodizing silicon substrate includes forming an n-type silicon embedded layer (21) made of n-type silicon on a predetermined area of a first surface of the p-type single crystal silicon substrate (2). N-type silicon layers (4, 6) are formed on the upper surface of the p-type single crystal silicon substrate (2) and on the n-type silicon embedded layer (21). Silicon diffusion layers (5, 7) containing high-concentration p-type impurities are formed on predetermined areas of the n-type silicon layers (4, 6) to contact the n-type silicon embedded layer (21). An electrode layer (13) is formed on the lower surface of the p-type silicon substrate (2). The anode of a DC power source (15) is connected to the electrode layer (13), and the cathode is connected to a counter electrode (23), which is opposed to the p-type silicon substrate (2). A current is intensively applied to an area corresponding to an opening (21a) of the n-type silicon layer (4) in a direction from the lower surface to the upper surface of the p-type single crystal silicon substrate (2), which makes the area porous.

摘要翻译： 一种用于阳极氧化硅衬底的方法包括在p型单晶硅衬底（2）的第一表面的预定区域上形成由n型硅制成的n型硅嵌入层（21）。 在p型单晶硅衬底（2）的上表面和n型硅嵌入层（21）上形成N型硅层（4,6）。 在n型硅层（4,6）的预定区域上形成含有高浓度p型杂质的硅扩散层（5,7），以与n型硅嵌入层（21）接触。 在p型硅衬底（2）的下表面上形成电极层（13）。 直流电源（15）的阳极与电极层（13）连接，阴极与与p型硅基板（2）相对的对置电极（23）连接。 在从p型单晶硅衬底（2）的下表面到上表面的方向上，电流强烈地施加到与n型硅层（4）的开口（21a）相对应的区域， 使得该区域多孔。

公开(公告)号：US06362079B1

公开(公告)日：2002-03-26

申请号：US09341323

申请日：1999-07-09

申请人： Hitoshi Iwata ,  Makoto Murate

发明人： Hitoshi Iwata ,  Makoto Murate

IPC分类号： H01L21326

CPC分类号： H01L21/02203 ,  G01P15/0802 ,  H01L21/02238 ,  H01L21/02258 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/31675 ,  Y10S438/96 ,  Y10S438/962

摘要： A first p-type silicon layer (3) is formed as a buried layer in a p-type single crystal silicon substrate (2), and an n-type silicon layer (4) is formed on the upper side of the silicon substrate (2). A second p-type silicon layer (5) for forming an opening is defined in the n-type silicon layer (4), and a metal protecting film (14) is formed on the upper side of the n-type silicon layer (4). An electrode layer (18) is formed on the rear side of the silicon substrate (2) via an oxide film (17). The electrode layer (18) and the silicon substrate (2) are electrically connected to each other via a connecting opening (17a) at portions aligned with the first p-type silicon layer (3). After a positive terminal and a negative terminal of a DC power source (V) are connected to the electrode layer (18) and to a counter electrode (11) respectively, a voltage is applied between the electrode layer (18) and the counter electrode (11) to carry out anodization.

摘要翻译： 在p型单晶硅衬底（2）中形成第一p型硅层（3）作为掩埋层，并且在硅衬底的上侧形成n型硅层（4） 2）。 在n型硅层（4）中限定用于形成开口的第二p型硅层（5），在n型硅层（4）的上侧形成有金属保护膜（14） ）。 通过氧化膜（17）在硅衬底（2）的后侧形成电极层（18）。 电极层（18）和硅衬底（2）在与第一p型硅层（3）对准的部分处经由连接开口（17a）彼此电连接。 在直流电源（V）的正端子和负端子分别连接到电极层（18）和对电极（11）之后，在电极层（18）和对电极 （11）进行阳极氧化处理。

公开(公告)号：US06336658B1

公开(公告)日：2002-01-08

申请号：US09388030

申请日：1999-09-01

申请人： Koichi Itoigawa ,  Yutaka Yoshida ,  Makoto Murate

发明人： Koichi Itoigawa ,  Yutaka Yoshida ,  Makoto Murate

IPC分类号： B60R2132

CPC分类号： H01H35/14 ,  B60R21/0132 ,  G01P15/135 ,  G01P2015/0831 ,  H01H1/0036 ,  H01H1/20

摘要： A small acceleration switch adapted to switch between ON and OFF states depending upon the magnitude of acceleration applied to the switch. The acceleration switch includes a first contact formed on a substrate and a movable part formed on a semiconductor chip by surface micromachining. The movable part includes a second contact. When the acceleration is equal to or greater than a predetermined value, the movable part moves and the second contact comes into contact with the first contact.

摘要翻译： 适于根据施加到开关的加速度大小在ON和OFF状态之间切换的小型加速开关。 加速度开关包括通过表面微机械加工形成在基板上的第一触点和形成在半导体芯片上的可移动部件。 可移动部件包括第二接触件。 当加速度等于或大于预定值时，可移动部分移动，第二触点与第一触点接触。

公开(公告)号：US5659138A

公开(公告)日：1997-08-19

申请号：US538697

申请日：1995-10-03

申请人： Hitoshi Iwata ,  Makoto Murate

发明人： Hitoshi Iwata ,  Makoto Murate

IPC分类号： B81B3/00 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84

CPC分类号： B81C1/00047 ,  G01P15/0802 ,  G01P15/123 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81C2201/0115 ,  G01P2015/0828 ,  Y10S438/96

摘要： A surface type acceleration sensor includes a p-type single crystal silicon base plate, a cantilever functioning as a cantilever structure portion, and a plurality of strain gauges. The cantilever is disposed in a recess portion formed on the front face of the p-type single crystal silicon base plate so that the cantilever can be displaced in the upward and downward direction. The cantilever includes an epitaxial growth layer principally made of n-type single crystal silicon. The strain gauge is made of p-type silicon and formed on an upper face of the base end portion of the cantilever.

摘要翻译： 表面型加速度传感器包括p型单晶硅基板，用作悬臂结构部分的悬臂和多个应变计。 悬臂设置在形成在p型单晶硅基板的正面上的凹部中，使得悬臂可以在向上和向下的方向上移位。 悬臂包括主要由n型单晶硅制成的外延生长层。 应变片由p型硅制成，并形成在悬臂的基端部的上表面上。