公开(公告)号：US08268516B2

公开(公告)日：2012-09-18

申请号：US12742741

申请日：2008-11-14

Applicant: Axel Zibold ,  Peter Kuschnerus ,  Oliver Kienzle

Inventor： Axel Zibold ,  Peter Kuschnerus ,  Oliver Kienzle

IPC: G03F1/72 ,  G06K9/00 ,  G01N21/00

CPC classification number: G03F1/72 ,  G03F1/84

Abstract: The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion. In such a method, the imaging properties are analyzed in that, for each defect to be improved, a test variable is determined for the defect as a function of focus and illumination, and at least one additional non-defective point on the phase shift mask in the immediate vicinity of the defect is determined, and a minimum allowable deviation between the test variable for the defect and the non-defective point is predetermined as the tolerance criterion.

Abstract translation: 本发明涉及一种修复用于光刻的相移掩模的方法，其中检查相位掩模是否存在缺陷，并且如果存在缺陷，则（i）进行关于哪个缺陷对成像特性的不利影响的分析 （ii）改善所述缺陷，（iii）分析改进的相移掩模的成像特性并检查预定的公差标准的维持，以及（iv）前述两个步骤（ii） 和（iii）如果成像性能不满足预定的公差标准，则可选地重复多次。 在这种方法中，分析成像特性，因为对于要改善的每个缺陷，确定作为焦点和照明的函数的缺陷的测试变量，以及相移掩模上的至少一个附加的非缺陷点 确定缺陷附近，将缺陷的试验变量与非缺陷点之间的最小容许偏差预先设定为公差标准。

公开(公告)号：US20050201514A1

公开(公告)日：2005-09-15

申请号：US10983362

申请日：2004-11-08

Applicant: Hans-Jurgen Mann ,  Udo Dinger ,  Wilhelm Ulrich ,  Wolfgang Reinecke ,  Thomas Engel ,  Axel Zibold ,  Wolfgang Harnisch ,  Marco Wedowski ,  Dieter Pauschinger

Inventor： Hans-Jurgen Mann ,  Udo Dinger ,  Wilhelm Ulrich ,  Wolfgang Reinecke ,  Thomas Engel ,  Axel Zibold ,  Wolfgang Harnisch ,  Marco Wedowski ,  Dieter Pauschinger

IPC: G03F1/16 ,  G21K1/06 ,  G21K7/00 ,  H01L21/027

CPC classification number: G21K7/00 ,  B82Y10/00 ,  G21K1/062

Abstract: There is provided a reflective X-ray microscope for examining an object in an object plane. The reflective X-ray microscope includes (a) a first subsystem, having a first mirror and a second mirror, disposed in a beam path from the object plane to the image plane, and (b) a second subsystem, having a third mirror, situated downstream of the first subsystem in the beam path. The object is illuminated with radiation having a wavelength

Abstract translation: 提供了用于检查物平面中的物体的反射X射线显微镜。 所述反射型X射线显微镜包括：（a）具有第一反射镜和第二反射镜的第一子系统，该第一子系统设置在从所述物体平面到所述像面的光束路径中，以及（b）具有第三反射镜的第二子系统， 位于光束路径中的第一子系统的下游。 用波长<100nm的辐射照射物体，反射X射线显微镜将物体放大成像到平面内。