公开(公告)号：US08084780B2

公开(公告)日：2011-12-27

申请号：US12540523

申请日：2009-08-13

申请人： Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

发明人： Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

IPC分类号： H01L33/00

CPC分类号： H05B33/0815 ,  H01L2224/16225 ,  H01L2924/12032 ,  H01L2924/13033 ,  H01L2924/13091 ,  H05B33/0842 ,  Y02B20/341 ,  H01L2924/00

摘要： A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC) on the substrate, and at least one light emitting diode (LED) on the substrate in electrical communication with the application specific integrated circuit (ASIC). The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated system having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

摘要翻译： 发光二极管（LED）系统包括衬底，衬底上的专用集成电路（ASIC）以及与专用集成电路（ASIC）电连接的衬底上的至少一个发光二极管（LED）。 发光二极管（LED）系统还可以包括聚合物透镜和用于产生白光的透镜或发光二极管（LED）上的荧光体层。 此外，多个发光二极管（LED）可以安装在基板上，并且可以具有用于智能色彩控制照明的不同颜色。 衬底和专用集成电路（ASIC）被配置为提供具有智能功能的集成系统。 此外，衬底被配置为补充和扩展专用集成电路（ASIC）的功能，并且还可以包括用于执行附加电功能的内置集成电路。

公开(公告)号：US08003994B2

公开(公告)日：2011-08-23

申请号：US12823866

申请日：2010-06-25

申请人： Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

发明人： Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/22

CPC分类号： H01L33/38 ,  H01L27/15 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/00

摘要： Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

摘要翻译： 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。

公开(公告)号：US07968379B2

公开(公告)日：2011-06-28

申请号：US12273331

申请日：2008-11-18

申请人： Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

发明人： Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

IPC分类号： H01L21/301

CPC分类号： H01L33/0079 ,  H01L33/0095

摘要： A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.

摘要翻译： 描述了在半导体制造期间分离多个管芯的方法。 在包含多个模具的半导体晶片的上表面上，除了存在一块停止电镀材料之外，金属层被沉积​​。 停止电镀材料被消除，并且在整个剩余结构上方形成阻挡层。 在阻挡层上方添加牺牲金属元素，然后去除衬底。 在消除各个管芯之间的半导体材料之后，将任何期望的接合焊盘和图案化电路添加到与牺牲金属元件相对的半导体表面，在该表面上添加钝化层，然后去除牺牲金属元件。 将胶带添加到现在暴露的阻挡层中，去除钝化层，将所得结构翻转，并且将带扩展以分离各个模具。

公开(公告)号：US07892891B2

公开(公告)日：2011-02-22

申请号：US11548647

申请日：2006-10-11

申请人： Chen-Fu Chu ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

发明人： Chen-Fu Chu ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

摘要： Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于切割包含多个金属器件管芯（例如垂直发光二极管（VLED）），功率器件，激光二极管和垂直腔表面发射激光器件管芯的晶片组件的技术。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，在具有原始非（或低）导热和/或非（或低）导电载体的金属器件的高散热率的情况下，这种技术可应用于GaN基电子器件 已被去除的底物。

公开(公告)号：US07759670B2

公开(公告)日：2010-07-20

申请号：US12136547

申请日：2008-06-10

申请人： Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

发明人： Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L33/00 ,  H01L29/22 ,  H01L29/24

CPC分类号： H01L33/38 ,  H01L27/15 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/00

摘要： Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

摘要翻译： 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。

公开(公告)号：US07723718B1

公开(公告)日：2010-05-25

申请号：US11548614

申请日：2006-10-11

申请人： Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

发明人： Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/32341

摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US07687322B1

公开(公告)日：2010-03-30

申请号：US11548637

申请日：2006-10-11

申请人： Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

发明人： Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

IPC分类号： H01L21/20

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/32341

摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US20090093075A1

公开(公告)日：2009-04-09

申请号：US12273331

申请日：2008-11-18

申请人： Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

发明人： Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

IPC分类号： H01L21/3205

CPC分类号： H01L33/0079 ,  H01L33/0095

摘要： A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.

摘要翻译： 描述了在半导体制造期间分离多个管芯的方法。 在包含多个模具的半导体晶片的上表面上，除了存在一块停止电镀材料之外，金属层被沉积​​。 停止电镀材料被消除，并且在整个剩余结构上方形成阻挡层。 在阻挡层上方添加牺牲金属元素，然后去除衬底。 在消除各个管芯之间的半导体材料之后，将任何期望的接合焊盘和图案化电路添加到与牺牲金属元件相对的半导体表面，在该表面上添加钝化层，然后去除牺牲金属元件。 将胶带添加到现在暴露的阻挡层中，去除钝化层，将所得结构翻转，并且将带扩展以分离各个模具。

公开(公告)号：US20080308829A1

公开(公告)日：2008-12-18

申请号：US12136547

申请日：2008-06-10

申请人： WEN-HUANG LIU ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

发明人： WEN-HUANG LIU ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L27/15 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/00

摘要： Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

摘要翻译： 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。

公开(公告)号：US07452739B2

公开(公告)日：2008-11-18

申请号：US11682814

申请日：2007-03-06

申请人： Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

发明人： Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

IPC分类号： H01L21/48

CPC分类号： H01L33/0079 ,  H01L33/0095

摘要： A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.

摘要翻译： 描述了在半导体制造期间分离多个管芯的方法。 在包含多个模具的半导体晶片的上表面上，除了存在一块停止电镀材料之外，金属层被沉积​​。 停止电镀材料被消除，并且在整个剩余结构上方形成阻挡层。 在阻挡层上方添加牺牲金属元素，然后去除衬底。 在消除各个管芯之间的半导体材料之后，将任何期望的接合焊盘和图案化电路添加到与牺牲金属元件相对的半导体表面，在该表面上添加钝化层，然后去除牺牲金属元件。 将胶带添加到现在暴露的阻挡层中，去除钝化层，将所得结构翻转，并且将带扩展以分离各个模具。