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    Plasma cleaning method for removing residues in a plasma treatment chamber
    13.
    发明授权
    Plasma cleaning method for removing residues in a plasma treatment chamber 失效
    用于去除等离子体处理室中的残留物的等离子体清洁方法

    公开(公告)号：US5356478A

    公开(公告)日：1994-10-18

    申请号：US176935

    申请日：1994-01-03

    Applicant: Ching-Hwa Chen ,  David Arnett ,  David Liu

    Inventor： Ching-Hwa Chen ,  David Arnett ,  David Liu

    IPC: B08B7/00 ,  C23C16/44 ,  C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

    CPC classification number: H01L21/67028 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32862

    Abstract: A plasma cleaning method for removing residues previously formed in a plasma treatment chamber by dry etching layers such as photoresist, barriers, etc., on a wafer. The method includes introducing a cleaning gas mixture of an oxidizing gas and a chlorine containing gas into the chamber followed by performing a plasma cleaning step. The plasma cleaning step is performed by activating the cleaning gas mixture and forming a plasma cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas and removing residues on the interior surfaces. The cleaning gas mixture can also include a fluorine-based gas. For instance, the cleaning gas can include Cl.sub.2 and O.sub.2 and optionally CF.sub.4. An advantage of the cleaning method is that it is not necessary to open the plasma treatment chamber. Also, it is possible to completely remove all residues and prevent by-products formed during the cleaning step from remaining after the cleaning step.

    Abstract translation: 一种等离子体清洗方法，用于通过诸如光致抗蚀剂，阻挡层等的干蚀刻层去除等离子体处理室中先前形成的残留物。 该方法包括将氧化气体和含氯气体的清洁气体混合物引入室中，然后执行等离子体清洗步骤。 通过激活清洁气体混合物并形成等离子体清洁气体，使室的内表面与等离子体清洁气体接触并除去内表面上的残留物来进行等离子体清洗步骤。 清洁气体混合物还可以包括氟基气体。 例如，清洁气体可以包括Cl 2和O 2以及任选的CF 4。 清洗方法的优点在于不需要打开等离子体处理室。 此外，可以完全除去所有残留物并且防止在清洁步骤后形成的副产物在清洁步骤之后残留。

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