Method of manufacturing field emission device
    18.
    发明授权
    Method of manufacturing field emission device 有权
    场致发射装置的制造方法

    公开(公告)号:US07942714B2

    公开(公告)日:2011-05-17

    申请号:US11790657

    申请日:2007-04-26

    IPC分类号: H01J9/02 H01J1/304

    摘要: A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.

    摘要翻译: 场发射显示器的制造方法包括:在基板上依次形成阴极电极,绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔,露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管(CNT)的发射极。