Memory device driving circuit
    9.
    发明授权
    Memory device driving circuit 有权
    存储器件驱动电路

    公开(公告)号:US07701745B2

    公开(公告)日:2010-04-20

    申请号:US11652555

    申请日:2007-01-12

    IPC分类号: G11C11/00

    摘要: A memory device driving circuit is disclosed which drives a memory device including a first electrode, a second electrode, and a memory layer interposed between the first electrode and the second electrode. The memory device driving circuit may include a main driver connected to the memory device, to drive the memory device, and a secondary driver connected between the memory device and the main driver, to control a set resistance of the memory device. The memory device driving circuit may freely adjust the set resistance of the memory device, to maintain the resistance of the memory device at a desired value. Accordingly, an improvement in the operation reliability of the memory device may be achieved.

    摘要翻译: 公开了一种存储器件驱动电路,其驱动包括第一电极,第二电极和介于第一电极和第二电极之间的存储层的存储器件。 存储器件驱动电路可以包括连接到存储器件的主驱动器,以驱动存储器件,以及连接在存储器件和主驱动器之间的次级驱动器,以控制存储器件的设定电阻。 存储器件驱动电路可以自由地调整存储器件的设定电阻,以将存储器件的电阻保持在期望值。 因此,可以实现存储器件的操作可靠性的改进。

    Memory device including dendrimer
    10.
    发明授权
    Memory device including dendrimer 有权
    记忆装置包括树枝状大分子

    公开(公告)号:US07635859B2

    公开(公告)日:2009-12-22

    申请号:US11318533

    申请日:2005-12-28

    IPC分类号: H01L51/05

    摘要: A memory device including an organic material layer between an upper electrode and a lower electrode. The organic material layer includes a dendrimer containing at least one electron-donating group and at least one electron-accepting group. The disclosed memory device is advantageous in that it shows a nonvolatile property, has high integration density and low power consumption characteristics, and may be inexpensively fabricated through a simple process.

    摘要翻译: 一种存储器件,包括在上电极和下电极之间的有机材料层。 有机材料层包括含有至少一个给电子基团和至少一个电子接受基团的树枝状聚合物。 所公开的存储器件的优点在于其显示非易失性特性,具有高的集成密度和低功耗特性,并且可以通过简单的工艺廉价地制造。