公开(公告)号：US20250126969A1

公开(公告)日：2025-04-17

申请号：US18910109

申请日：2024-10-09

Applicant: Japan Display Inc.

Inventor： Nobuto MANAGAKI

IPC: H10K50/18 ,  H10K101/10 ,  H10K101/20

Abstract: Disclosed is a light-emitting element including an anode, a cathode, and an electroluminescence layer between the anode and the cathode. The electroluminescence layer includes: an electron-blocking layer; a buffer layer over the electron-blocking layer; and an emission layer located over the buffer layer and containing a host material and a first emission material exhibiting thermally activated delayed fluorescence. The buffer layer contains the host material. The emission layer may further include a second emission material. An energy level of a singlet excited state of the second emission material is lower than an energy level of a singlet excited state of the first emission material.

公开(公告)号：US20250123707A1

公开(公告)日：2025-04-17

申请号：US18911564

申请日：2024-10-10

Applicant: Japan Display Inc.

Inventor： Hiroshi YAMAGUCHI

IPC: G06F3/041 ,  G06F3/044

Abstract: According to an aspect, a detection device includes: a sensor circuit including a plurality of sensor electrodes provided to a substrate, a peripheral electrode provided around a detection region provided with the sensor electrodes, and a shield electrode provided to a surface opposite to a surface provided with the sensor electrodes and the peripheral electrode; an AFE circuit configured to generate sensing data corresponding to a distance between the sensor electrodes and a proximity object, based on a detection signal acquired from the sensor electrodes; a drive signal generation circuit configured to generate a drive signal with a substantially sinusoidal waveform and supply the drive signal to the peripheral electrode and the shield electrode; and a control circuit configured to control the AFE circuit and the drive signal generation circuit. The control circuit controls an amplitude value of the drive signal based on the sensing data.

公开(公告)号：US12279351B2

公开(公告)日：2025-04-15

申请号：US18659660

申请日：2024-05-09

Applicant: Japan Display Inc.

Inventor： Yukio Takayashiki

IPC: H05B47/115 ,  F21S8/00 ,  F21V9/14 ,  F21V14/08 ,  F21V23/00 ,  F21W111/023

Abstract: An illumination device includes a detector configured to detect that a mobile terminal device has entered a communication area corresponding to the device, and a light irradiator configured to emit light for guiding a person with the mobile terminal device detected by the detector. The light irradiator emits light indicating a route through which the person with the mobile terminal device should proceed.

公开(公告)号：US20250116902A1

公开(公告)日：2025-04-10

申请号：US18982529

申请日：2024-12-16

Applicant: Japan Display Inc.

Inventor： Kojiro IKEDA ,  Takeo KOITO ,  Tae KUROKAWA

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/139

Abstract: A liquid crystal light control device includes a plurality of liquid crystal cells arranged in a stack. Each of the plurality of liquid crystal cells includes a first substrate and a second substrate opposite the first substrate, a first electrode and a second electrode both of which have a strip pattern arranged on at least one of the first substrate and the second substrate, a first alignment film on the first substrate and a second alignment film on the second substrate, and a liquid crystal layer between the first substrate and the second substrate. The strip pattern is arranged alternately with the first electrode and the second electrode, an alignment direction of the first alignment film is aligned with a direction of extension of the strip pattern, and an alignment direction of the second alignment film is arranged intersecting the alignment direction of the first alignment film.

公开(公告)号：US12272330B2

公开(公告)日：2025-04-08

申请号：US18372733

申请日：2023-09-26

Applicant: Japan Display Inc.

Inventor： Kazune Matsumura

IPC: G09G3/36 ,  G02F1/1362 ,  G02F1/1368

Abstract: In a liquid crystal display device, scanning lines, video signal lines and pixels are formed in respective regions enclosed by the scanning lines and the video signal lines. In the liquid crystal display device, a pixel electrode and a thin-film transistor (TFT) are formed in each of the pixels, a first insulating film is formed between a common electrode formed in common for a plurality of pixels and the pixel electrode, the pixel electrode is connected to one of the video signal lines via the TFT, the TFT has a gate connected to one of the scanning lines, a constant common voltage is supplied to the common electrode, the scanning lines are sequentially scanned from a first scanning line in one frame, and a predetermined voltage is applied for a predetermined period to all the scanning lines before a scanning signal is applied to the first scanning line.

公开(公告)号：US20250113709A1

公开(公告)日：2025-04-03

申请号：US18895446

申请日：2024-09-25

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Kentaro MIURA ,  Masahiro WATABE

IPC: H10K59/124 ,  H01L27/12 ,  H10K59/121 ,  H10K59/131

Abstract: A display device includes a light-emitting element, a first transistor, and a second transistor, the first transistor includes a first gate electrode, a first insulating film, a first oxide semiconductor layer, a second insulating film, and a first conductive layer provided on the second insulating film, and the second transistor includes the first insulating film, a second oxide semiconductor layer, a second insulating film, and a second gate electrode, wherein an etching rate of the first oxide semiconductor layer and the second semiconductor layer is less than 3 nm/min when the first oxide semiconductor layer and the second semiconductor layer are etched using an etching solution containing phosphoric acid as a main component at 40° C.

公开(公告)号：US20250113546A1

公开(公告)日：2025-04-03

申请号：US18897024

申请日：2024-09-26

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Kentaro MIURA ,  Takeshi SAKAI ,  Akihiro HANADA ,  Masahiro WATABE

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423

Abstract: A semiconductor device includes a gate electrode, an oxide semiconductor layer having a polycrystalline structure, and a gate insulating layer between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes a source region and a drain region each containing an impurity element, a channel region between the source region and the drain region, and a first region adjacent to the channel region. The first region includes a first edge extending along a first direction travelling from the source region to the drain region. The first region has a higher electrical resistivity than each of the source region and the drain region. An etching rate of the oxide semiconductor layer is less than 3 nm/min when the oxide semiconductor layer is etched using an etching solution containing phosphoric acid as a main component at 40° C.

公开(公告)号：US20250113544A1

公开(公告)日：2025-04-03

申请号：US18895591

申请日：2024-09-25

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Kentaro MIURA ,  Masahiro WATABE

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49

Abstract: A semiconductor device according to an embodiment of the present invention includes: an oxide semiconductor layer; a first gate electrode facing the oxide semiconductor layer; a first gate insulating layer between the oxide semiconductor layer and the first gate electrode; an electrode arranged in a region overlapping the oxide semiconductor layer in a plan view and electrically connected to the oxide semiconductor layer; and a metal nitride layer between the oxide semiconductor layer and the electrode, wherein the oxide semiconductor layer is polycrystalline, and an etching rate of the oxide semiconductor layer with respect to an etchant containing phosphoric acid as a main component is less than 3 nm/min at 40° C.

公开(公告)号：US20250113535A1

公开(公告)日：2025-04-03

申请号：US18895467

申请日：2024-09-25

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Marina MOCHIZUKI ,  Masahiro WATABE

IPC: H01L29/786

Abstract: A semiconductor device includes a light shielding layer, a first silicon nitride insulating layer in contact with the light shielding layer with a first interface, a first silicon oxide insulating layer in contact with the first silicon nitride layer with a second interface, and an oxide semiconductor layer over the first silicon oxide insulating layer. The first silicon oxide insulating layer is in contact with the second silicon oxide insulating layer. A thickness t of the first silicon nitride layer satisfies a condition in which light reflected at the first interface and light reflected at the second interface weaken each other when light having a wavelength of 450 nm is incident on the first silicon nitride insulating layer at an angle of 60 degrees from a normal direction of the second interface.

公开(公告)号：US20250110370A1

公开(公告)日：2025-04-03

申请号：US18888357

申请日：2024-09-18

Applicant: Japan Display Inc.

Inventor： Takashi OTA ,  Michihide SHIBATA ,  Toshihiro YAJIMA

IPC: G02F1/13357 ,  G02F1/1335

Abstract: A task of the present invention is to realize a display device with high definition and high contrast by means of local dimming. The configuration is as follows. A liquid crystal display device including a display panel and a back light, the back light having a light source and a group of optical sheets, the light source including a light source substrate and LEDs arranged on the light source substrate, the light source being divided into segments in a plan view, the segment including at least one LED, characterized in that the segment is surrounded by a stacked structure of a lower reflection wall and an upper reflection wall.