公开(公告)号：US20240379829A1

公开(公告)日：2024-11-14

申请号：US18656855

申请日：2024-05-07

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Marina MOCHIZUKI ,  Ryo ONODERA ,  Masahiro WATABE

IPC: H01L29/66 ,  G02F1/1368 ,  H01L29/45 ,  H01L29/786 ,  H10K59/122

Abstract: A semiconductor device includes a gate electrode, a gate insulating layer over the gate electrode, an oxide semiconductor layer having a polycrystalline structure over the gate insulating layer, a source electrode and a drain electrode over the oxide semiconductor layer, and an interlayer insulating layer in contact with the oxide semiconductor layer, the interlayer insulating layer covering the source electrode and the drain electrode. The oxide semiconductor layer includes a first region overlapping one of the source electrode and the drain electrode and a second region in contact with the interlayer insulating layer. A difference between a thickness of the first region and a thickness of the second region is less than or equal to 1 nm.

公开(公告)号：US20230137257A1

公开(公告)日：2023-05-04

申请号：US18091388

申请日：2022-12-30

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Takanori TSUNASHIMA ,  Marina MOCHIZUKI

IPC: H01L31/12 ,  G06F1/16 ,  H01L31/101

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

公开(公告)号：US20220238825A1

公开(公告)日：2022-07-28

申请号：US17720366

申请日：2022-04-14

Applicant: Japan Display Inc.

Inventor： Marina MOCHIZUKI ,  Isao SUZUMURA

IPC: H01L51/44 ,  H01L51/42

Abstract: The purpose of the present invention is to prevent a decrease in light reflection characteristic and an increase in electric resistance due to oxidation of silver in a semiconductor device including an optical sensor in which silver is used for an anode of a photoconductive film. The present invention has a following structure to solve the problem: A semiconductor device includes a thin film transistor formed on a substrate 100. An electrode connected electrically to the thin film transistor is formed of a silver film 128. A first indium tin oxide (ITO) film 129 is formed on the silver film 128. An alumina (AlOx) film 130 is formed on the first ITO film 129.

公开(公告)号：US20210005771A1

公开(公告)日：2021-01-07

申请号：US17024725

申请日：2020-09-18

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Takanori TSUNASHIMA ,  Marina MOCHIZUKI

IPC: H01L31/12 ,  G06F1/16 ,  H01L31/101

Abstract: The problem of the present disclosure is to provide a photo sensor circuit that uses oxide semiconductor transistors and the operation of which is stable. The photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. Each of the photo transistor, the first switching transistor, and the second transistor includes an oxide semiconductor layer as a channel layer.

公开(公告)号：US20250120243A1

公开(公告)日：2025-04-10

申请号：US18985529

申请日：2024-12-18

Applicant: Japan Display Inc.

Inventor： Marina MOCHIZUKI ,  Isao SUZUMURA

IPC: H10K30/65 ,  H10K30/82

Abstract: The purpose of the present invention is to prevent a decrease in light reflection characteristic and an increase in electric resistance due to oxidation of silver in a semiconductor device including an optical sensor in which silver is used for an anode of a photoconductive film. The present invention has a following structure to solve the problem: A semiconductor device includes a thin film transistor formed on a substrate 100. An electrode connected electrically to the thin film transistor is formed of a silver film 128. A first indium tin oxide (ITO) film 129 is formed on the silver film 128. An alumina (AlOx) film 130 is formed on the first ITO film 129.

公开(公告)号：US20250022964A1

公开(公告)日：2025-01-16

申请号：US18760532

申请日：2024-07-01

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Marina MOCHIZUKI ,  Ryo ONODERA ,  Masahiro WATABE

IPC: H01L29/786 ,  H01L29/423

Abstract: A semiconductor device comprises a first insulating layer, an oxide semiconductor layer having a polycrystalline structure on the first insulating layer, a gate insulating layer on the oxide semiconductor layer, a gate wiring on the gate insulating layer, and a second insulating layer on the gate wiring. The oxide semiconductor layer has a first region, a second region and a third region aligned toward a first direction. The first region overlaps the gate insulating layer and the gate wiring. The third region is in contact with the second insulating layer. A distance from a top surface of the second region to a top surface of the second insulating layer is longer than a distance from a top surface of the third region to the top surface of the second insulating layer.

公开(公告)号：US20240288739A1

公开(公告)日：2024-08-29

申请号：US18433729

申请日：2024-02-06

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Marina MOCHIZUKI ,  Ryo ONODERA

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12

CPC classification number: G02F1/136295 ,  G02F1/13685 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1225

Abstract: An electronic device comprises a first stacked structure including a first oxide semiconductor layer having a polycrystalline structure, a first insulating layer on the first oxide semiconductor layer, and a first conductive layer overlapping the first oxide semiconductor layer via the first insulating layer; and a second stacked structure including a second oxide semiconductor layer composed of the same layer as the first oxide semiconductor layer, the first insulating layer on the second oxide semiconductor layer, and a second conductive layer overlapping the second oxide semiconductor layer via the first insulating layer and composed of the same layer as the first conductive layer. A portion of the first oxide semiconductor layer not overlapping the first conductive layer contains an impurity element, and the second oxide semiconductor layer does not contain the impurity element.

公开(公告)号：US20240244923A1

公开(公告)日：2024-07-18

申请号：US18411034

申请日：2024-01-12

Applicant: Japan Display Inc.

Inventor： Hayata AOKI ,  Jun NITTA ,  Marina MOCHIZUKI

IPC: H10K59/80 ,  H10K59/122 ,  H10K59/35 ,  H10K102/10

CPC classification number: H10K59/80518 ,  H10K59/122 ,  H10K59/353 ,  H10K2102/103

Abstract: According to one embodiment, a display device includes a plurality of pixels including at least a first pixel and a second pixel, each of the plurality of pixels comprising an anode including a reflective electrode and a transparent electrode, an organic EL layer provided on the anode, wherein a first anode of the first pixel includes a first reflective electrode and a first transparent electrode, a second anode of the second pixel includes a second reflective electrode and a second transparent electrode, an end portion of the first reflective electrode and an end portion of the first transparent electrode coincide with each other, and the second transparent electrode covers the second reflective electrode.

公开(公告)号：US20240213393A1

公开(公告)日：2024-06-27

申请号：US18597953

申请日：2024-03-07

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Takanori TSUNASHIMA ,  Marina MOCHIZUKI

IPC: H01L31/12 ,  G06F1/16 ,  H01L31/101

CPC classification number: H01L31/125 ,  G06F1/1605 ,  H01L31/1016

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

公开(公告)号：US20240379865A1

公开(公告)日：2024-11-14

申请号：US18651909

申请日：2024-05-01

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Marina MOCHIZUKI ,  Ryo ONODERA ,  Masahiro WATABE

IPC: H01L29/786 ,  H01L29/417

Abstract: A semiconductor device according to an embodiment of the present invention includes: a gate electrode; a gate insulating layer; a metal oxide layer containing aluminum as a main component above the gate insulating layer; an oxide semiconductor layer having a polycrystalline structure above the metal oxide layer; a source electrode and a drain electrode contacting the oxide semiconductor layer from above the oxide semiconductor layer; and an insulating layer above the source electrode and the drain electrode, wherein a linear mobility of the semiconductor device is larger than 20 cm2/Vs when (Vg−Vth)×Cox=5×10−7 C/cm2, in the case where the Vg is a voltage supplied to the gate electrode, the Vth is a threshold voltage of the semiconductor device, and the Cox is an electrostatic capacitance of the gate insulating layer sandwiched by the gate electrode and the oxide semiconductor layer.