摘要:
A photoconductive member, is provided which has a support, a first layer having photoconductivity containing an amorphous material comprising silicon atoms as a matrix provided on said support and a second layer containing silicon atoms and carbon atoms as essential components provided on said first layer, wherein said first layer contains at least one kind of atoms selected from the group III of the periodic table together with nitrogen atoms, with the nitrogen atoms having a substantially uniform concentration distribution within said first layer and the group III atoms of the periodic table having a depth concentration profile of said atoms with respect to the layer thickness direction having the maximum concentration at the end surface on the side of said support or in the vicinity thereof and having the concentration of said atoms tending to decrease continuously toward the second layer.
摘要:
A photoconductive member comprises a substrate, a layer composed of an amorphous material comprising Si and Ge, said layer having a layer region (C) containing carbon atoms. The layer region (C) has a region (X) where the concentration of carbon atoms increases in the direction of layer thickness toward the upper surface of said layer.An amorphous layer of silicon containing at least one of nitrogen and oxygen may overlie said layer.
摘要:
A photoconductive member is provided which comprises a substrate and a photoconductive light receiving layer made up of an amorphous material containing silicon atoms and germanium atoms, the light receiving layer containing nitrogen atoms and having a first layer region (1), a third layer region (3), and a second layer region (2) of nitrogen atom distribution concentrations C(1), C(3), and C(2), respectively, in the thickness direction, in that order from the substrate side to the opposite side, wherein C(3) is higher than any of C(2) and C(1) and one of C(1) and C(2) is not zero.
摘要:
A photoconductive member is provided which comprises a substrate and a light receiving layer having photoconductivity which comprises an amorphous material containing silicon atoms and germanium atoms, the distribution of germanium atoms therein being nonuniform in the layer thickness direction, and carbon atoms being contained in the light receiving layer.Said photoconductive member can further comprise thereon another layer which comprises amorphous material containing silicon atoms as a matrix and at least one kind of atoms selected from the group of nitrogen atoms and oxygen atoms.
摘要:
A photoconductive member comprises a support for a photoconductive member; a first amorphous layer comprising an amorphous material containing silicon atoms as a matrix and exhibiting photoconductivity, said first amorphous layer having a first layer region containing oxygen atoms as constituent atoms in a distribution state which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution state which is continuous in the direction of layer thickness, said first layer region existing internally beneath the surface of said first amorphous layer; and a second amorphous layer comprising an amorphous material represented by any of the following formulae:Si.sub.a C.sub.1-a (0.4
摘要:
A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiOA) in a gaseous state having at least one substituent (OA) of the formula of --OC.sub.a H.sub.b X.sub.c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, provided that b and c are not simultaneously zero and X is halogen atom to form a deposition film containing silicon atom on a substrate.A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiA) in a gaseous state having 2-6 silicon atoms, having at least one substituent (A) of the formula of --C.sub.a H.sub.b X.sub.c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, and X is halogen atom, containing at least one species selected from hydrogen atom and halogen atom, and further at least one of the silicon atoms present at the both ends bonding to only one species selected from hydrogen atom and halogen atom except for bonding to another silicon atom, to form a deposition film containing silicon atom on a substrate.
摘要翻译:一种用于形成沉积膜的方法包括向具有至少一个下式的-OCaHbXc的取代基(OA)的气态的硅烷化合物(SiOA)施加激发能,其中b + c = 2a + 1,a为正 如果b和c不是同时为零,而X是卤素原子以形成在衬底上含有硅原子的沉积膜,则整数,b和c为零或正整数。 形成沉积膜的方法包括向具有2-6个硅原子的气态的硅烷化合物(SiA)施加激发能,其具有至少一个下式的-CaHbXc的取代基(A),其中b + c = 2a +1,a为正整数,b和c为0或正整数,X为含有至少一个选自氢原子和卤素原子的卤原子,另外至少一个硅原子存在于 两端仅与一个选自氢原子和卤原子的物质结合,除了与另一个硅原子结合,以在基片上形成含有硅原子的沉积膜。
摘要:
A photoconductive member comprises a substrate and a light receiving layer having photoconductive provided on said support, comprising silicon atoms as a matrix and at least halogen atoms as constituent atoms said light receiving layer having a depth profile with respect to the layer thickness direction such that the concentration of halogen atoms contained therein is increased from the said substrate side toward the surface side of the photoconductive member.
摘要:
A photoconductive member comprising a support for photoconductive member and an amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a matrix is characterized in that said amorphous layer has a first layer region containing, as constituent atoms, oxygen atoms in a distribution which is nonuniform and continuous in the direction of the layer thickness and a second layer region containing, as constituent atoms, the atoms (A) belonging to group III or group V of the periodic table in a distribution which is continuous in the direction of the layer thickness, said second layer existing internally beneath the surface of said amorphous layer.
摘要:
A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing as the constituent atom at least one kind of atoms selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms in a distribution state which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution state which is ununiform and continuous in the direction of layer thickness, said first layer region existing internally below the surface of said amorphous layer.
摘要:
A light receiving member comprising a substrate and a light receiving layer disposed on said substrate, said light receiving layer being composed of a non-Si (H,X) material containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and halogen atoms (X), characterized in that said light receiving layer further contains at least chromium atoms (Cr), iron atoms (Fe)f nickel atoms (Ni), sodium atoms (Na), and magnesium atoms (Mg) respectively in an amount of 0.9 atomic ppm or less. The light receiving member is suitable for use as electronic devices such as electrophotographic light receiving members, solar cells, and the like, wherein it stably and continuously exhibits desirable characteristics without being deteriorated even upon repeated use over a long period of time.