公开(公告)号：US20080309432A1

公开(公告)日：2008-12-18

申请号：US11764042

申请日：2007-06-15

申请人： Gernot Fattinger ,  Klaus Diefenbeck ,  Peter Mueller ,  Winfried Nessler

发明人： Gernot Fattinger ,  Klaus Diefenbeck ,  Peter Mueller ,  Winfried Nessler

IPC分类号： H03H9/54 ,  H01L41/22

CPC分类号： H03H9/584 ,  H03H3/04 ,  H03H9/589 ,  H03H2003/0428 ,  H03H2003/0435 ,  H03H2003/0442 ,  H03H2003/0478 ,  Y10T29/42

摘要： A method for manufacturing a coupled resonator device includes forming a first part of a plurality of layers, trimming an exposed layer of the first part and forming a remaining part of the plurality of layers. The coupled resonator device includes a stack of the plurality of layers, the plurality of layers including a first piezo-layer with a first and a second electrode layer sandwiching the first piezo-layer, a second piezo-layer with a first and a second electrode layer sandwiching the second piezo-layer, the first and second piezo-layers being acoustically coupled to each other.

摘要翻译： 一种用于制造耦合谐振器装置的方法包括形成多个层的第一部分，修整第一部分的暴露层并形成多个层的剩余部分。 所述耦合谐振器装置包括所述多个层的堆叠，所述多个层包括具有夹着所述第一压电层的第一和第二电极层的第一压电层，具有第一和第二电极的第二压电层 层夹着第二压电层，第一和第二压电层彼此声学耦合。

公开(公告)号：US06888226B2

公开(公告)日：2005-05-03

申请号：US10479267

申请日：2002-05-24

申请人： Klaus Diefenbeck ,  Christian Herzum ,  Jakob Huber ,  Karlheinz Müller

发明人： Klaus Diefenbeck ,  Christian Herzum ,  Jakob Huber ,  Karlheinz Müller

IPC分类号： H01L29/08 ,  H01L29/36 ,  H01L29/861 ,  H01L29/167 ,  H01L21/331

CPC分类号： H01L29/861 ,  H01L29/0821 ,  H01L29/36

摘要： A semiconductor structure includes a base layer of a first conductivity type, a first layer of the first conductivity type arranged on the base layer and having a dopant concentration that is lower than a dopant concentration of the base layer, and a second layer of a second conductivity type being operative with the first layer in order to form a transition between the first conductivity type and the second conductivity type. A course of a dopant profile at the transition between the base layer and the first layer is set such that in an ESD case a space charge region shifted to the transition between the base layer and the first layer reaches into the base layer.

摘要翻译： 半导体结构包括第一导电类型的基底层，布置在基底层上并且具有低于基底层的掺杂剂浓度的掺杂剂浓度的第一导电类型的第一层和第二导电类型的第二层 导电类型与第一层一起工作，以形成第一导电类型和第二导电类型之间的转变。 在基底层和第一层之间的过渡处的掺杂剂分布的过程被设置为使得在ESD情况下移动到基底层和第一层之间的转变的空间电荷区域到达基底层。