-
公开(公告)号：US20150333730A1
公开(公告)日：2015-11-19
申请号：US14810481
申请日：2015-07-28
申请人： Johanna Meltaus , Tuomas Pensala
发明人： Johanna Meltaus , Tuomas Pensala
IPC分类号： H03H9/205
CPC分类号： H03H9/02228 , H03H9/0095 , H03H9/02007 , H03H9/02125 , H03H9/175 , H03H9/177 , H03H9/205 , H03H9/564 , H03H9/584 , H03H2003/0414 , Y10T29/42
摘要： In a bulk acoustic wave (BAW) filter based on laterally acoustically coupled resonators on piezoelectric thin films, one can utilize two distinct acoustic plate wave modes of different nature, for example the thickness extensional (longitudinal) TE1 and the second harmonic thickness shear (TS2) mode to form a bandpass response. The invention is based on the excitation of at least two lateral standing wave resonances belonging to different plate wave modes that facilitate the transmission of signal. The passband is designed by tailoring the wave propagation characteristics in the device such that the resonances are excited at suitable frequencies to form a passband of a desired shape. The bandwidth of the filter described herein may therefore be more than twice that of the existing state-of-the-art microacoustic filters. Consequently, it has significant commercial and technological value.
摘要翻译： 在基于压电薄膜上的横向声耦合谐振器的体声波（BAW）滤波器中，可以利用不同性质的两种不同的声板波模，例如厚度延伸（纵向）TE1和二次谐波厚度剪切（TS2 ）模式以形成带通响应。 本发明基于属于促进信号传输的不同平板波模式的至少两个横向驻波共振的激发。 该通带是通过调整装置中的波传播特性来设计的，使得谐振在合适的频率被激发以形成所需形状的通带。 因此，这里描述的滤波器的带宽可以是现有的最先进的微声滤波器的两倍以上。 因此，具有重要的商业和技术价值。
-
公开(公告)号：US09154112B2
公开(公告)日：2015-10-06
申请号：US13036489
申请日：2011-02-28
申请人： Dariusz Burak
发明人： Dariusz Burak
CPC分类号： H03H9/58 , H03H9/02086 , H03H9/02118 , H03H9/132 , H03H9/584
摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator.
摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。
-
公开(公告)号：US09148117B2
公开(公告)日：2015-09-29
申请号：US13167939
申请日：2011-06-24
申请人： Dariusz Burak , Alexandre Shirakawa , Chris Feng , Phil Nikkel , Stefan Bader
发明人： Dariusz Burak , Alexandre Shirakawa , Chris Feng , Phil Nikkel , Stefan Bader
CPC分类号： H03H9/0211 , H03H3/04 , H03H9/02007 , H03H9/132 , H03H9/584 , H03H9/587 , H03H9/589
摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.
摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。 内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。
-
公开(公告)号：US20150270826A1
公开(公告)日：2015-09-24
申请号：US14219866
申请日：2014-03-19
发明人： Dariusz Burak
IPC分类号： H03H9/54
CPC分类号： H03H9/02228 , H03H9/02992 , H03H9/14558 , H03H9/547 , H03H9/584 , H03H9/6426
摘要： A laterally coupled resonator filter device includes a bottom electrode, a piezoelectric layer disposed on the bottom electrode, and a top contour electrode disposed on the piezoelectric layer. The top contour electrode includes first and second top comb electrodes. The first top comb electrode include a first top bus bar and multiple first top fingers extending in a first direction from the first top bus bar. The second top comb electrode includes a second top bus bar and multiple second top fingers extending in a second direction from the second top bus bar, the second direction being substantially opposite to the first direction such that the first and second top fingers form a top interleaving pattern providing an acoustic filter having an apodized shape.
摘要翻译： 横向耦合的谐振器滤波器装置包括底部电极，设置在底部电极上的压电层和设置在压电层上的顶部轮廓电极。 顶部轮廓电极包括第一和第二顶部梳状电极。 第一顶部梳状电极包括第一顶部汇流条和从第一顶部汇流条沿第一方向延伸的多个第一顶部指状物。 第二顶部梳状电极包括第二顶部汇流条和从第二顶部汇流条沿第二方向延伸的多个第二顶部指状物，第二方向基本上与第一方向相反，使得第一和第二顶部指状物形成顶部交错 提供具有变迹形状的声学滤波器的图案。
-
5.发明授权Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer 有权包含在压电层内形成的桥的体声波谐振器公开(公告)号：US09048812B2
公开(公告)日：2015-06-02
申请号：US13208909
申请日：2011-08-12
CPC分类号： H03H9/132 , H03H3/04 , H03H9/02007 , H03H9/02118 , H03H9/173 , H03H9/175 , H03H9/584 , H03H9/585 , H03H9/587 , H03H9/589
摘要： A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.
摘要翻译： 体声波（BAW）结构包括设置在基板上的第一电极，设置在第一电极上的压电层和设置在第一压电层上的第二电极。 桥接器形成在压电层内，桥被压电层的压电材料包围。
-
6.发明授权Acoustic coupling layer for coupled resonator filters and method of fabricating acoustic coupling layer 有权用于耦合谐振滤波器的声耦合层和制造声耦合层的方法公开(公告)号：US08587391B2
公开(公告)日：2013-11-19
申请号：US12710590
申请日：2010-02-23
申请人： Steve Gilbert , Rick Snyder , John D. Larson, III , Phil Nikkel
发明人： Steve Gilbert , Rick Snyder , John D. Larson, III , Phil Nikkel
摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; and a single-material acoustic coupling layer disposed between the first and second BAW resonators, the acoustic coupling layer having an acoustic impedance less than approximately 6.0 MRayls and an acoustic attenuation less than approximately 1000 dB/cm.
摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 以及设置在第一和第二BAW谐振器之间的单材料声耦合层，声耦合层具有小于约6.0Mrad的声阻抗和小于约1000dB / cm的声衰减。
-
7.发明申请FILTERING CIRCUIT WITH COUPLED BAW RESONATORS AND HAVING IMPEDANCE MATCHING ADAPTATION 审中-公开带联轴器谐波器的滤波电路，并具有阻抗匹配适配公开(公告)号：US20120004016A1
公开(公告)日：2012-01-05
申请号：US13158163
申请日：2011-06-10
摘要： A filtering circuit includes a substrate; an acoustic mirror or a membrane destined to act as a mechanical support of acoustic resonators and to isolate these resonators from the substrate; a first section comprising an upper resonator and a lower resonator coupled to each other by at least one acoustic coupling layer; and a second section comprising an upper resonator and a lower resonator coupled to each other by at least one acoustic coupling layer. The filtering circuit also includes metallic vias implementing an inter stage connection between the lower resonator of a section and the upper resonator of the other section. Preferably, the upper resonators exhibit a piezoelectric layer having a thickness selected in order to achieve an optimal impedance matching between the said first and second sections.
摘要翻译： 滤波电路包括：基板; 声反射镜或膜，目的地是作为声谐振器的机械支撑并将这些谐振器与基板隔离; 第一部分，包括通过至少一个声耦合层彼此耦合的上谐振器和下谐振器; 以及第二部分，包括通过至少一个声耦合层彼此耦合的上谐振器和下谐振器。 滤波电路还包括实现部分的下部谐振器与另一部分的上部谐振器之间的级间连接的金属通孔。 优选地，上部谐振器具有选择厚度的压电层，以便实现所述第一和第二部分之间的最佳阻抗匹配。
-
公开(公告)号：US20110267155A1
公开(公告)日：2011-11-03
申请号：US13177797
申请日：2011-07-07
申请人： Motoaki HARA , Shinji TANIGUCHI , Takeshi SAKASHITA , Tsuyoshi YOKOYAMA , Masafumi IWAKI , Tokihiro NISHIHARA , Masanori UEDA
发明人： Motoaki HARA , Shinji TANIGUCHI , Takeshi SAKASHITA , Tsuyoshi YOKOYAMA , Masafumi IWAKI , Tokihiro NISHIHARA , Masanori UEDA
CPC分类号： H03H9/584 , H03H9/0095 , H03H9/542 , H03H9/60 , H03H9/706
摘要： A filter element includes a plurality of multilayer filters that are connected in cascade, each of the plurality of multilayer filters including a plurality of piezoelectric thin-film resonators stacked vertically, each of the piezoelectric thin-film resonators including a piezoelectric film and a pair of first electrodes between which the piezoelectric film is interposed, and a capacitor connected between an input terminal of one of the plurality of multilayer filters of a preceding stage and an input terminal of another one of the plurality of multilayer filters of a following stage, exciting directions of piezoelectric thin-film resonators to which the input terminals of the multilayer filters of the preceding and following stages are connected being opposite to each other.
摘要翻译： 滤波器元件包括串联连接的多个多层滤波器，多个多层滤波器中的每一个包括垂直堆叠的多个压电薄膜谐振器，每个压电薄膜谐振器包括压电薄膜和一对 插入压电膜的第一电极和连接在前级的多个多层滤波器中的一个的输入端子和后级的多个多层滤波器中的另一个的输入端子之间的电容器，激励方向 压电薄膜谐振器彼此相反地连接有前级和后级的多层滤波器的输入端。
-
公开(公告)号：US20110237204A1
公开(公告)日：2011-09-29
申请号：US12748640
申请日：2010-03-29
申请人： Tiberiu Jamneala , Richard C. Ruby
发明人： Tiberiu Jamneala , Richard C. Ruby
摘要： In accordance with a representative embodiment, a BAW resonator structure, comprises a first BAW resonator, comprising: a first lower electrode having a first electrical resistance; a first upper electrode having a second electrical resistance; and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode. The BAW resonator structure also comprises a second BAW resonator, comprising: a second lower electrode having the second electrical resistance; a second upper electrode having the first electrical resistance; and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator. The first electrical resistance is less than the second electrical resistance. An communication device comprising a coupled resonator filter (CRF) is also disclosed.
摘要翻译： 根据代表性实施例，BAW谐振器结构包括第一BAW谐振器，包括：具有第一电阻的第一下电极; 具有第二电阻的第一上电极; 以及设置在第一下电极和第一上电极之间的第一压电层。 BAW谐振器结构还包括第二BAW谐振器，包括：具有第二电阻的第二下电极; 具有第一电阻的第二上电极; 以及设置在第二下电极和第二上电极之间的第二压电层。 BAW谐振器结构还包括设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层。 第一电阻小于第二电阻。 还公开了一种包括耦合谐振滤波器（CRF）的通信设备。
-
公开(公告)号：US08018303B2
公开(公告)日：2011-09-13
申请号：US11871711
申请日：2007-10-12
IPC分类号： H03H9/54
摘要： An apparatus includes a stacked crystal filter and a bulk acoustic wave resonator, which are acoustically coupled.
摘要翻译： 一种装置包括声耦合的堆叠晶体滤波器和体声波谐振器。
-
-
-
-
-
-
-
-
-
搜索结果
186 条记录 (耗时 0.022 秒)
