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    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds
    11.
    发明授权
    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds 有权
    NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件

    公开(公告)号：US07692021B2

    公开(公告)日：2010-04-06

    申请号：US11508925

    申请日：2006-08-24

    Applicant: Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

    Inventor： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

    IPC: C07D277/20 ,  C07D277/60

    CPC classification number: C07D495/04 ,  C07D417/14 ,  H01L51/0545 ,  H01L51/5048

    Abstract: Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

    Abstract translation: 本文公开了NPN型低分子芳环化合物，由这些化合物形成的有机半导体层，其表现出改进的电稳定性，并且使用基于溶液的方法形成这种层的方法，例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜，然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜，该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料，从而改善所得器件的电性能。

    Organic thin film transistor(s) and method(s) for fabricating the same
    14.
    发明授权
    Organic thin film transistor(s) and method(s) for fabricating the same 有权
    有机薄膜晶体管及其制造方法

    公开(公告)号：US07547574B2

    公开(公告)日：2009-06-16

    申请号：US11297396

    申请日：2005-12-09

    Applicant: Hyun Jung Park ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Kook Min Han ,  Jung Seok Hahn ,  Tae Woo Lee

    Inventor： Hyun Jung Park ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Kook Min Han ,  Jung Seok Hahn ,  Tae Woo Lee

    IPC: H01L51/40

    CPC classification number: H01L51/105 ,  H01L51/0055 ,  H01L51/052

    Abstract: Example embodiments of the present invention for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer wherein the metal oxide source/drain electrodes are surface-treated with a self-assembled monolayer (SAM) forming compound containing a sulfonic acid group. According to example embodiments of the present invention, the surface of the source/drain electrodes may be modified to be more hydrophobic and/or the work function of a metal oxide constituting the source/drain electrodes may be increased to above that of an organic semiconductor material constituting the organic semiconductor layer. Organic thin film transistors fabricated according to one or more example embodiments of the present invention may exhibit higher charge carrier mobility. Also disclosed are various example devices including display devices having organic thin film transistors made by example embodiments of the present invention.

    Abstract translation: 本发明的制造有机薄膜晶体管的示例实施例包括基板，栅电极，栅极绝缘层，金属氧化物源极/漏极和有机半导体层，其中金属氧化物源极/漏极用 包含磺酸基团的自组装单层（SAM）形成化合物。 根据本发明的示例性实施例，源/漏电极的表面可以被修改为更疏水，和/或构成源/漏电极的金属氧化物的功函数可以增加到高于有机半导体的功函数 构成有机半导体层的材料。 根据本发明的一个或多个示例性实施例制造的有机薄膜晶体管可以表现出更高的载流子迁移率。 还公开了包括具有由本发明的示例性实施例制成的有机薄膜晶体管的显示器件的各种示例器件。

    Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same
    16.
    发明申请
    Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same 有权
    制造有机薄膜晶体管的方法和使用其制造的有机薄膜晶体管

    公开(公告)号：US20070194386A1

    公开(公告)日：2007-08-23

    申请号：US11604826

    申请日：2006-11-28

    Applicant: Jung Seok Hahn ,  Bon Won Koo ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

    Inventor： Jung Seok Hahn ,  Bon Won Koo ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

    IPC: H01L29/94

    CPC classification number: H01L51/105 ,  H01L51/0036 ,  H01L51/0545 ,  H01L2251/308

    Abstract: Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.

    Abstract translation: 公开了制造由基板，栅极，栅极绝缘膜，金属氧化物源极/漏极和有机半导体层组成的有机薄膜晶体管的方法。 所述方法包括将足够量的含有活性离子的自组装单层化合物施加到金属氧化物电极的表面以形成自组装单层。 在金属氧化物电极和有机半导体层之间的界面处存在活性离子来改变这些材料的相对功函数。 此外，在栅极绝缘膜上存在自组装单层趋于减小滞后。 因此，根据示例性实施例制造的有机薄膜晶体管倾向于表现出改善的电荷迁移率，改善的栅极绝缘膜性质和与有机绝缘体相关联的减小的滞后。

    Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain
    17.
    发明授权
    Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain 有权
    在骨架链中含有喹喔啉环的有机薄膜晶体管的有机半导体聚合物

    公开(公告)号：US07030409B2

    公开(公告)日：2006-04-18

    申请号：US10844380

    申请日：2004-05-13

    Applicant: Bang Lin Lee ,  Eun Jeong Jeong ,  Kook Min Han ,  In Nam Kang

    Inventor： Bang Lin Lee ,  Eun Jeong Jeong ,  Kook Min Han ,  In Nam Kang

    IPC: H01L21/00

    CPC classification number: H01L51/0043 ,  C08G61/122 ,  C08G61/124 ,  C08G61/125 ,  C08G61/126 ,  C08G73/0694 ,  H01L21/31691 ,  H01L51/0036 ,  H01L51/0516 ,  H01L51/0545

    Abstract: Disclosed herein is a composite-structured organic semiconductor polymer for an organic thin film transistor which contains quinoxaline rings in the backbone of the polymer. According to the organic semiconductor polymer, since quinoxaline rings having n-type semiconductor characteristics, such as high electron affinity, are incorporated into a polythiophene having p-type semiconductor characteristics, the organic semiconductor polymer simultaneously exhibits both p-type and n-type semiconductor characteristics. In addition, the polythienylquinoxaline derivative exhibits high solubility in organic solvents, co-planarity and stability in air. Furthermore, when the polythienylquinoxaline derivative is used as an active layer of an organic thin film transistor, the organic thin film transistor exhibits a high charge carrier mobility and a low off-state leakage current.

    Abstract translation: 本文公开了一种用于有机薄膜晶体管的复合结构有机半导体聚合物，其在聚合物的主链中含有喹喔啉环。 根据有机半导体聚合物，由于具有高电子亲和性的n型半导体特性的喹喔啉环被并入具有p型半导体特性的聚噻吩中，所以有机半导体聚合物同时呈现p型和n型半导体 特点 此外，聚噻吩基喹喔啉衍生物在有机溶剂中表现出高溶解度，在空气中的共平面性和稳定性。 此外，当使用聚噻吩基喹喔啉衍生物作为有机薄膜晶体管的有源层时，有机薄膜晶体管表现出高的载流子迁移率和低截止状态的漏电流。

    Methods of fabricating organic thin film transistors
    18.
    发明授权
    Methods of fabricating organic thin film transistors 有权
    制造有机薄膜晶体管的方法

    公开(公告)号：US08476103B2

    公开(公告)日：2013-07-02

    申请号：US13355940

    申请日：2012-01-23

    Applicant: Bon Won Koo ,  Joon Yong Park ,  Jung Seok Hahn ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

    Inventor： Bon Won Koo ,  Joon Yong Park ,  Jung Seok Hahn ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

    IPC: H01L21/00

    CPC classification number: H01L51/0512 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0558

    Abstract: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

    Abstract translation: 公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法，包括制备至少具有水溶性聚合物，UV固化剂和水溶性氟化合物的水性涂料组合物。 将该涂料组合物施加到基材上，使用UV辐射曝光，然后使用水性显影组合物显影以形成图案。 因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影，所以该方法倾向于保持存在于基材上的其它有机结构的完整性。 此外，氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度，从而可以避免或减少随后的表面处理。

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