公开(公告)号：US06465815B2

公开(公告)日：2002-10-15

申请号：US09751012

申请日：2000-12-29

Applicant: Wen-Chau Liu ,  Jung-Hui Tsai ,  Wen-Lung Chang ,  Kuo-Hui Yu ,  Kun-Wei Lin

Inventor： Wen-Chau Liu ,  Jung-Hui Tsai ,  Wen-Lung Chang ,  Kuo-Hui Yu ,  Kun-Wei Lin

IPC: H01L29778

CPC classification number: H01L29/7784

Abstract: The invention relates to a high-breakdown voltage heterostructure field-effect transistor (FET), which can be used under a high temperature condition. The FET device from bottom upward in succession includes a semiconductor substrate, a buffer layer, a delta-doped sheet, an undoped layer, a sub-channel layer, an active channel layer, a gate layer, and an ohmic contact layer.

公开(公告)号：US08008680B2

公开(公告)日：2011-08-30

申请号：US12887199

申请日：2010-09-21

Applicant: Kuo-Hui Yu ,  Yu-Cheng Yang ,  Cheng-Ta Kuo

Inventor： Kuo-Hui Yu ,  Yu-Cheng Yang ,  Cheng-Ta Kuo

IPC: H01L33/00

CPC classification number: H01L33/42 ,  H01L33/0079 ,  H01L33/32

Abstract: A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.

Abstract translation: 提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构， 第一电极和第二电极。 衬底上的第一半导体层具有第一部分和第二部分。 有源层和第二半导体层随后设置在第一部分上。 第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。 第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。

公开(公告)号：US20090065794A1

公开(公告)日：2009-03-12

申请号：US12230887

申请日：2008-09-08

Applicant: Kuo-Hui Yu ,  Yu-Cheng Yang ,  Cheng-Ta Kuo

Inventor： Kuo-Hui Yu ,  Yu-Cheng Yang ,  Cheng-Ta Kuo

IPC: H01L33/00

CPC classification number: H01L33/42 ,  H01L33/0079 ,  H01L33/32

Abstract: A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.

Abstract translation: 提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构， 第一电极和第二电极。 衬底上的第一半导体层具有第一部分和第二部分。 有源层和第二半导体层随后设置在第一部分上。 第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。 第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。

公开(公告)号：US09231158B2

公开(公告)日：2016-01-05

申请号：US13221908

申请日：2011-08-31

Applicant: Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yen ,  Chien-Kai Chung

Inventor： Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yen ,  Chien-Kai Chung

IPC: H01L21/00 ,  H01L33/38 ,  H01L33/20

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/382 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.

Abstract translation: 公开了一种用于促进LED芯片的识别率的发光二极管（LED）结构和LED结构的制造方法，其中使第一导电类型的第一电极焊盘下方的表面的粗糙程度类似于 的第二导电类型的第二电极焊盘的表面，使得从第一电极焊盘示出的光泽可以类似于来自第二电极焊盘的光泽，从而解决由不同光泽引起的引线接合机的不良识别问题 从第一和第二电极焊盘。

公开(公告)号：US08507938B2

公开(公告)日：2013-08-13

申请号：US12753106

申请日：2010-04-02

Applicant: Kuo-Hui Yu ,  Tsung-Hung Lu ,  Chang-Hsin Chu

Inventor： Kuo-Hui Yu ,  Tsung-Hung Lu ,  Chang-Hsin Chu

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the same are described. The light-emitting diode structure includes a p-type electrode, a bonding substrate, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, an epitaxial growth substrate and an n-type electrode. The bonding substrate is disposed on the p-type electrode. The p-type semiconductor layer is disposed on the bonding substrate. The active layer is disposed on the p-type semiconductor layer. The n-type semiconductor layer is disposed on the active layer. The epitaxial growth substrate is disposed on the n-type semiconductor layer, wherein the epitaxial growth substrate includes an opening penetrating the epitaxial growth substrate. The n-type electrode is disposed in the opening and is electrically connected to the n-type semiconductor layer.

Abstract translation: 描述了一种发光二极管（LED）结构及其制造方法。 发光二极管结构包括p型电极，接合衬底，p型半导体层，有源层，n型半导体层，外延生长衬底和n型电极。 接合基板设置在p型电极上。 p型半导体层设置在接合基板上。 有源层设置在p型半导体层上。 n型半导体层设置在有源层上。 外延生长衬底设置在n型半导体层上，其中外延生长衬底包括穿透外延生长衬底的开口。 n型电极设置在开口中并与n型半导体层电连接。

公开(公告)号：US20120085988A1

公开(公告)日：2012-04-12

申请号：US13037737

申请日：2011-03-01

Applicant: Kuo-Hui Yu ,  Jing-Hong Li ,  Chang-Hsin Chu

Inventor： Kuo-Hui Yu ,  Jing-Hong Li ,  Chang-Hsin Chu

IPC: H01L33/06 ,  H01L33/46

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layer, a first electrode and a second electrode. The epitaxial layer is disposed on the substrate. The first electrode is disposed to the epitaxial layer and the second electrode is disposed on the epitaxial layer, and a first conductive finger of the second electrode and a first conductive finger of the first electrode are overlapped. Because the first conductive finger of the second electrode and the first conductive finger of the first electrode are overlapped, the light-emitting area of the LED device can be increased and the light shielded by the electrodes can be decreased significantly. Besides, overlapped electrodes can form a capacitor which can store electric charges to enhance the antistatic ability of the LED device.

Abstract translation: 发光二极管（LED）装置包括衬底，外延层，第一电极和第二电极。 外延层设置在基板上。 第一电极设置在外延层上，第二电极设置在外延层上，第二电极的第一导电指状物和第一电极的第一导电指状物重叠。 因为第二电极的第一导电指状物和第一电极的第一导电指状物重叠，所以可以增加LED器件的发光面积，并且可以显着降低由电极屏蔽的光。 此外，重叠的电极可以形成可以存储电荷的电容器，以提高LED器件的抗静电能力。

公开(公告)号：US08076686B2

公开(公告)日：2011-12-13

申请号：US12073736

申请日：2008-03-10

Applicant: Kuo-Hui Yu ,  Yu-Cheng Yang ,  An-Ru Lin ,  Tsun-Kai Ko ,  Wei-Shou Chen ,  Yi-Wen Ku ,  Cheng-Ta Kuo

Inventor： Kuo-Hui Yu ,  Yu-Cheng Yang ,  An-Ru Lin ,  Tsun-Kai Ko ,  Wei-Shou Chen ,  Yi-Wen Ku ,  Cheng-Ta Kuo

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/46 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.

Abstract translation: 公开了一种发光二极管及其制造方法。 该制造方法包括以下步骤：在永久性基板上依次形成接合层，几何图案层，反射层，外延结构和第一电极，其中几何图案层具有周期性结构; 以及在所述永久基板的一侧上形成第二电极。

公开(公告)号：US08466478B2

公开(公告)日：2013-06-18

申请号：US12876850

申请日：2010-09-07

Applicant: Meng Hsin Li ,  Kuo Hui Yu ,  Tsung-Hung Lu ,  Ming-Ji Tsai ,  Chang Hsin Chu

Inventor： Meng Hsin Li ,  Kuo Hui Yu ,  Tsung-Hung Lu ,  Ming-Ji Tsai ,  Chang Hsin Chu

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

Abstract: In one aspect of the invention, a light emitting device includes an epi layer having multiple layers of semiconductors formed on a substrate, a first electrode and a second electrode having opposite polarities with each other, and electrically coupled to corresponding semiconductor layers, respectively, of the epi layer, and a rod structure formed on the epi layer. The rod structure includes a plurality of rods distanced from each other.

Abstract translation: 在本发明的一个方面，一种发光器件包括：具有形成在衬底上的多层半导体的外延层，具有彼此极性的第一电极和第二电极，并分别电耦合到相应的半导体层 外延层，以及形成在外延层上的棒状结构。 杆结构包括彼此远离的多个杆。

公开(公告)号：US20120086029A1

公开(公告)日：2012-04-12

申请号：US13037827

申请日：2011-03-01

Applicant: Kuo-Hui YU ,  Chang-Hsin Chu

Inventor： Kuo-Hui YU ,  Chang-Hsin Chu

IPC: H01L33/46

CPC classification number: H01L33/20 ,  H01L33/46 ,  H01L2933/0025

Abstract: A light-emitting diode (LED) device includes a substrate and an epitaxial layer which is disposed on a surface of the substrate. A depression is disposed to a sidewall of the LED device, and a reflective layer is disposed to on least one portion of the depression. By the reflective layer disposed to the depression of the sidewall of the LED device, the light loss caused by the interface of the substrate and the epitaxial layer can be reduced, the light absorbed by the substrate can be decreased, and the angle of the light exiting from the LED device can be adjusted. A manufacturing method of the LED device is also disclosed.

Abstract translation: 发光二极管（LED）装置包括衬底和设置在衬底的表面上的外延层。 凹陷设置在LED器件的侧壁上，反射层设置在凹陷的至少一部分上。 通过设置在LED器件的侧壁的凹陷处的反射层，可以减少由衬底和外延层的界面引起的光损失，可以减少由衬底吸收的光，并且光的角度 可以调节从LED器件退出。 还公开了LED器件的制造方法。

公开(公告)号：US20110312113A1

公开(公告)日：2011-12-22

申请号：US13221908

申请日：2011-08-31

Applicant: Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yen ,  Chien-Kai Chung

Inventor： Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yen ,  Chien-Kai Chung

IPC: H01L33/20

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/382 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.

Abstract translation: 公开了一种用于促进LED芯片的识别率的发光二极管（LED）结构和LED结构的制造方法，其中使第一导电类型的第一电极焊盘下方的表面的粗糙程度类似于 的第二导电类型的第二电极焊盘的表面，使得从第一电极焊盘示出的光泽可以类似于来自第二电极焊盘的光泽，从而解决由不同光泽引起的引线接合机的不良识别问题 从第一和第二电极焊盘。