Abstract:
Described is a polypeptide inhibiting the transmigration of leukocytes or the growth and/or metastasis of cancer cells, a fusion protein thereof, a polynucleotide encoding the polypeptide, a vector including the polynucleotide, and a transformant transformed with the vector. Described is also a pharmaceutical composition for the prevention or treatment of inflammatory diseases, or the inhibition of the growth and/or metastasis of cancer cells including the polypeptide or a fusion protein thereof.
Abstract:
A hybrid charge pump including a hybrid circuit configured to snub an over shoot or under shoot present in an input pulse in a snubbing operation if a level of the pulse is a first level, store the pulse in a charging operation if the level of the pulse is a second level different from the first level, and generate a negative voltage from the stored pulse in a negative voltage generation operation.
Abstract:
In a clock-based soft-start circuit configured to generate a soft-start reference voltage that restrains an inrush current at an initialization of power supplied to a DC-DC converter, the clock-based soft-start circuit comprises a time setting unit configured to set a soft-start time period in response to a clock signal. A ramp circuit is configured to generate a soft-start reference voltage which is ramped upward or downward between a base level and a reference voltage level during the soft start time period set by the time setting unit. In this manner, the clock-based soft-start circuit is applicable for all DC-DC converters and the soft-start in a linear slope is possible.
Abstract:
A method of fabricating an extended drain MOS transistor which reduces a design rule and prevents the generation of leakage current. The method includes sequentially forming a diffusion film, a first conductive epitaxial layer, a gate oxide layer and a hard mask layer over a semiconductor substrate, forming a first hard mask pattern having a first thickness by performing a first etching process on the hard mask layer, forming a second hard mask pattern having a second thickness by performing a second etching process on the first hard mask layer, and then forming a thin gate oxide layer by performing a third etching process on the gate oxide layer using the second hard mask pattern as a mask.
Abstract:
Disclosed is a wireless transmitting and receiving antenna which comprises a bobbin made of insulation material and having a first penetration cavity in the center of the bobbin in a lengthwise direction; a first antenna comprising a helical conductor spirally wound on the bobbin and having a resonance frequency, and a matching bar inserted into the cavity of the bobbin, made of a conductor and providing a second penetration cavity in the direction identical with that of the first penetration cavity; a feeder positioned at one part of the bobbin so as to supply signals to the helical conductor; and a second antenna comprising: a rod inserted into the penetration cavities of the bobbin and the matching bar, moving between the penetration cavities in a slipping manner, and wrapped with the insulation material; a conduction material combined to the outer part of the rod, and electrically connecting the feeder and the helical conductor when the rod is inserted into the penetration cavities; and a stopper which is made of a conductor, positioned at the lower part of the rod, and when the rod. is drawn Afro, the penetration cavity, the moving of the stopper is limited, and it is contacted to the feeder so as to supply signals to the rod.
Abstract:
A method of fabricating an extended drain MOS transistor which reduces a design rule and prevents the generation of leakage current. The method includes sequentially forming a diffusion film, a first conductive epitaxial layer, a gate oxide layer and a hard mask layer over a semiconductor substrate, forming a first hard mask pattern having a first thickness by performing a first etching process on the hard mask layer, forming a second hard mask pattern having a second thickness by performing a second etching process on the first hard mask layer, and then forming a thin gate oxide layer by performing a third etching process on the gate oxide layer using the second hard mask pattern as a mask.
Abstract:
Disclosed are a polarizer, a method for fabricating the same, and a liquid crystal display having the same. The liquid crystal display includes a liquid crystal panel and a polarizer attached to the liquid crystal panel. The polarizer includes a polarizing film, a first support film, and a second support film. The first support film has optical anisotropy and is attached to the polarizing film. The first support film has a first thickness. The second support film is attached to the polarizing film while facing the first support film and has a second thickness, which is greater than the first thickness. The polarizer is fabricated by evaporating a solvent from a solution including polymer resin to form an optical film and then elongating the optical film.
Abstract:
Disclosed are a polarizer, a method for fabricating the same, and a liquid crystal display having the same. The liquid crystal display includes a liquid crystal panel and a polarizer attached to the liquid crystal panel. The polarizer includes a polarizing film, a first support film, and a second support film. The first support film has optical anisotropy and is attached to the polarizing film. The first support film has a first thickness. The second support film is attached to the polarizing film while facing the first support film and has a second thickness, which is greater than the first thickness. The polarizer is fabricated by evaporating a solvent from a solution including polymer resin to form an optical film and then elongating the optical film.