公开(公告)号：US06753235B2

公开(公告)日：2004-06-22

申请号：US10086629

申请日：2002-03-04

Applicant: Woo Young So ,  Kyung Jin Yoo ,  Sang Il Park

Inventor： Woo Young So ,  Kyung Jin Yoo ,  Sang Il Park

IPC: H01L21331

CPC classification number: H01L27/1288 ,  H01L27/1214

Abstract: A method of manufacturing a CMOS TFT including forming first and second semiconductor layers on an insulating substrate using a first mask, respectively, the substrate having first and second regions, the first semiconductor layer formed on the first region, the second semiconductor layer formed on the second region; forming sequentially a first insulating layer, a first metal layer and a second insulating layer over the whole surface of the substrate; etching a portion of the first metal layer and a portion of the second insulating layer over the first region of the substrate using a second mask to form a first gate electrode and a first capping layer; forming first spacers on both side wall portion of the first gate electrode and the first capping layer; ion-implanting a first conductive-type high-density impurity into the first semiconductor layer using the first spacers and the first gate electrode as a mask to form first high-density source and drain regions; etching a portion of the first metal layer and a portion of the second insulating layer over the second region of the substrate using a third mask to form a second gate electrode and a second capping layer; and ion-implanting a second conductive-type high density impurity into the second semiconductor layer using the third mask to form second high-density source and drain regions.

Abstract translation: 一种制造CMOS TFT的方法，包括分别使用第一掩模在绝缘基板上形成第一和第二半导体层，所述基板具有第一和第二区域，所述第一半导体层形成在第一区域上，第二半导体层形成在 第二区 在基板的整个表面上依次形成第一绝缘层，第一金属层和第二绝缘层; 使用第二掩模在所述衬底的所述第一区域上蚀刻所述第一金属层的一部分和所述第二绝缘层的一部分，以形成第一栅电极和第一覆盖层; 在所述第一栅电极和所述第一覆盖层的两侧壁部分上形成第一间隔物; 使用第一间隔物和第一栅电极作为掩模，将第一导电型高密度杂质离子注入第一半导体层，以形成第一高密度源极和漏极区; 使用第三掩模在所述基板的所述第二区域上蚀刻所述第一金属层的一部分和所述第二绝缘层的一部分，以形成第二栅电极和第二封盖层; 以及使用所述第三掩模将第二导电型高密度杂质离子注入到所述第二半导体层中以形成第二高密度源极和漏极区。

公开(公告)号：US08076837B2

公开(公告)日：2011-12-13

申请号：US11517277

申请日：2006-09-08

Applicant: Choong-Youl Im ,  Kyung-Jin Yoo ,  Woo-Sik Jun ,  Do-hyun Kwon ,  Tae-Wook Kang

Inventor： Choong-Youl Im ,  Kyung-Jin Yoo ,  Woo-Sik Jun ,  Do-hyun Kwon ,  Tae-Wook Kang

IPC: H01L51/00

CPC classification number: H01L51/5203 ,  H01L27/3246 ,  H01L27/3258

Abstract: An organic light emitting display device (OLED) and a method of fabricating the same. The OLED includes: a substrate; a thin film transistor on the substrate and including a source electrode and a drain electrode; a first insulating layer on the substrate having the source and drain electrodes; a second insulating layer on the first insulating layer and including a trench; a via hole formed in the trench over the first and second insulating layers and exposing a portion of the source electrode or the drain electrode; a first electrode in the trench and connected to one of the source electrode and the drain electrode through the via hole; a pixel defining layer on the first electrode and having an opening exposing the first electrode; an organic layer in the opening and having at least an organic emission layer; and a second electrode on an entire surface of the substrate having the organic layer.

Abstract translation: 一种有机发光显示装置（OLED）及其制造方法。 OLED包括：基底; 薄膜晶体管，其包括源电极和漏电极; 在所述衬底上的具有所述源极和漏极的第一绝缘层; 在所述第一绝缘层上的第二绝缘层，并且包括沟槽; 通孔，形成在所述沟槽中，在所述第一绝缘层和所述第二绝缘层上并暴露所述源电极或所述漏电极的一部分; 沟槽中的第一电极，并通过通孔与源电极和漏极之一连接; 第一电极上的像素限定层，并具有暴露第一电极的开口; 所述开口中的有机层至少具有有机发光层; 以及在具有有机层的基板的整个表面上的第二电极。

公开(公告)号：US20080284326A1

公开(公告)日：2008-11-20

申请号：US12152601

申请日：2008-05-14

Applicant: Jong-Hyun Choi ,  Kyung-Jin Yoo ,  Hee-Chul Jeon

Inventor： Jong-Hyun Choi ,  Kyung-Jin Yoo ,  Hee-Chul Jeon

IPC: H01J1/62 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3248 ,  H01L51/5212 ,  H01L51/5218 ,  H01L2251/5315

Abstract: Provided is an organic light emitting diode (OLED) display device, including: a substrate; a semiconductor layer on the substrate; a gate insulating layer on the substrate with the semiconductor layer; a gate electrode on a region of the gate insulating layer corresponding to the semiconductor layer and insulated from the semiconductor layer; source and drain electrodes connected to the semiconductor layer; metal layers on the source and drain electrodes, spaced a distance apart from each other, and including nickel; a passivation layer over the gate insulating layer; a first electrode on the passivation layer, and electrically connected to the metal layers; an organic layer on the first electrode; and a second electrode on the organic layer.

Abstract translation: 提供了一种有机发光二极管（OLED）显示装置，包括：基板; 衬底上的半导体层; 在具有半导体层的衬底上的栅极绝缘层; 所述栅电极与所述半导体层对应并与所述半导体层绝缘的所述栅极绝缘层的区域上; 源极和漏极连接到半导体层; 源极和漏极上的金属层，彼此隔开一段距离，并包括镍; 栅绝缘层上的钝化层; 钝化层上的第一电极，并电连接到金属层; 第一电极上的有机层; 和有机层上的第二电极。

公开(公告)号：US20060011914A1

公开(公告)日：2006-01-19

申请号：US11218496

申请日：2005-09-06

Applicant: Tae-Sung Kim ,  Kyung-Jin Yoo

Inventor： Tae-Sung Kim ,  Kyung-Jin Yoo

IPC: H01L29/04

CPC classification number: H01L29/4908 ,  H01L27/12 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458

Abstract: A novel design for an electrode for a thin film transistor. The novel design allows for formation of a normal conductive channel between a source electrode and a drain electrode even after a heat treatment process, and a flat panel display including the thin film transistor. The thin film transistor includes a source electrode, a drain electrode, a gate electrode, and a semiconductor layer, wherein at least one of the source electrode, the drain electrode, and the gate electrode includes an aluminum alloy layer, and titanium layers are formed on both surfaces of the aluminum alloy layer. The electrodes are preferably absent any pure aluminum as pure aluminum can diffuse into the semiconductor layer causing a defect region and preventing a conductive channel from forming in the thin film transistor.

Abstract translation: 一种用于薄膜晶体管的电极的新颖设计。 该新型设计允许即使在热处理工艺之后也可在源极和漏极之间形成正常的导电通道，以及包括薄膜晶体管的平板显示器。 薄膜晶体管包括源电极，漏电极，栅电极和半导体层，其中源电极，漏电极和栅电极中的至少一个包括铝合金层，并且形成钛层 在铝合金层的两个表面上。 电极优选不存在任何纯铝，因为纯铝可以扩散到半导体层中，导致缺陷区域并且防止在薄膜晶体管中形成导电沟道。

公开(公告)号：US06805602B2

公开(公告)日：2004-10-19

申请号：US10662393

申请日：2003-09-16

Applicant: Woo-Young So ,  Kyung-Jin Yoo ,  Sang-II Park

Inventor： Woo-Young So ,  Kyung-Jin Yoo ,  Sang-II Park

IPC: H01J924

CPC classification number: H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/32 ,  H01L29/78621

Abstract: A flat panel display device with improved electrical characteristics and a simplified manufacturing process is disclosed. The device includes a semiconductor layer formed on an insulating substrate; source and drain electrodes directly contacting both end portions of the semiconductor layer, respectively; a pixel electrode having an opening portion formed thereon; a first insulating layer formed over the remaining portion of the insulating substrate except for the opening portion; a gate electrode formed on a portion of the first insulating layer over the semiconductor layer; and source and drain regions formed in both end portions of the semiconductor layer.

Abstract translation: 公开了一种具有改善的电气特性和简化制造工艺的平板显示装置。 该器件包括形成在绝缘衬底上的半导体层; 源极和漏极分别直接接触半导体层的两个端部; 形成有开口部的像素电极; 除了所述开口部之外，形成在所述绝缘基板的剩余部分上的第一绝缘层; 形成在半导体层上的第一绝缘层的一部分上的栅电极; 以及形成在半导体层的两个端部中的源极和漏极区域。

公开(公告)号：US20120288975A1

公开(公告)日：2012-11-15

申请号：US13295016

申请日：2011-11-11

Applicant: Choong-Youl IM ,  Kyung-Jin YOO ,  Woo-Sik JUN ,  Do-hyun KWON ,  Tae-Wook KANG

Inventor： Choong-Youl IM ,  Kyung-Jin YOO ,  Woo-Sik JUN ,  Do-hyun KWON ,  Tae-Wook KANG

IPC: H01L51/56

CPC classification number: H01L51/5203 ,  H01L27/3246 ,  H01L27/3258

Abstract: An organic light emitting display device (OLED) and a method of fabricating the same. The OLED includes: a substrate; a thin film transistor on the substrate and including a source electrode and a drain electrode; a first insulating layer on the substrate; a second insulating layer on the first insulating layer and including a trench; a via hole formed in the trench over the first and second insulating layers and exposing a portion of the source electrode or the drain electrode; a first electrode in the trench and connected to one of the source electrode and the drain electrode through the via hole; a pixel defining layer on the first electrode and having an opening exposing the first electrode; an organic layer in the opening and having at least an organic emission layer; and a second electrode on an entire surface of the substrate having the organic layer.

Abstract translation: 一种有机发光显示装置（OLED）及其制造方法。 OLED包括：基底; 薄膜晶体管，其包括源电极和漏电极; 基板上的第一绝缘层; 在所述第一绝缘层上的第二绝缘层，并且包括沟槽; 通孔，形成在所述沟槽中，在所述第一绝缘层和所述第二绝缘层上并暴露所述源电极或所述漏电极的一部分; 沟槽中的第一电极，并通过通孔与源电极和漏极之一连接; 第一电极上的像素限定层，并具有暴露第一电极的开口; 所述开口中的有机层至少具有有机发光层; 以及在具有有机层的基板的整个表面上的第二电极。

公开(公告)号：US08174012B2

公开(公告)日：2012-05-08

申请号：US11935670

申请日：2007-11-06

Applicant: Jong-Hyun Choi ,  Kyung-Jin Yoo

Inventor： Jong-Hyun Choi ,  Kyung-Jin Yoo

IPC: H01L29/04

CPC classification number: H01L27/1277 ,  H01L27/1255 ,  H01L27/1296 ,  H01L27/3244 ,  H01L27/3265 ,  H01L27/3276 ,  H01L51/0021

Abstract: An organic light emitting diode display device (OLED display device) having uniform electrical characteristics and a method of manufacturing the same. The OLED display device includes: a substrate; a semiconductor layer disposed on the substrate, and including source and drain regions and a channel region formed using metal induced lateral crystallization (MILC); a gate insulating layer for electrically insulating the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer for electrically insulating the gate electrode; a thin film transistor (TFT) including source and drain electrodes that are electrically connected to the source and drain regions of the semiconductor layer; a first electrode for a capacitor disposed on a region of the substrate to be spaced apart from the TFT and formed using a metal induced crystallization (MIC); the gate insulating layer for electrically insulating the first capacitor electrode; a second electrode for the capacitor disposed on the gate insulating layer; a planarization layer disposed on the TFT and the capacitor; a first electrode disposed on the planarization layer; a pixel defining layer disposed on the first electrode; an organic layer disposed on the first electrode and the pixel defining layer, and including at least an emission layer; and a second electrode disposed on the organic layer.

Abstract translation: 一种具有均匀电特性的有机发光二极管显示装置（OLED显示装置）及其制造方法。 OLED显示装置包括：基板; 设置在所述衬底上的半导体层，并且包括源区和漏区以及使用金属诱导横向结晶（MILC）形成的沟道区; 用于使所述半导体层电绝缘的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 用于使所述栅电极电绝缘的层间绝缘层; 包括电连接到半导体层的源极和漏极区域的源极和漏极的薄膜晶体管（TFT）; 用于电容器的第一电极，设置在与TFT间隔开并且使用金属诱导结晶（MIC）形成的基板的区域上; 所述栅极绝缘层用于使所述第一电容器电极电绝缘; 用于设置在栅极绝缘层上的电容器的第二电极; 设置在TFT和电容器上的平坦化层; 设置在所述平坦化层上的第一电极; 设置在所述第一电极上的像素限定层; 设置在所述第一电极和所述像素限定层上的有机层，并且至少包括发光层; 以及设置在有机层上的第二电极。

公开(公告)号：US20080224600A1

公开(公告)日：2008-09-18

申请号：US11892008

申请日：2007-08-17

Applicant: Choong-Youl Im ,  Kyung-Jin Yoo

Inventor： Choong-Youl Im ,  Kyung-Jin Yoo

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3276 ,  H01L27/3246 ,  H01L51/56

Abstract: An organic light emitting display (OLED) device having a simple process of fabrication and improved lifetime and reliability, and a method of fabricating the same are disclosed. The OLED device comprises: a substrate; a sealing member which seals a plurality of pixels arranged on a pixel region; and a sealing material which bonds the substrate and the sealing member. Each of the pixels includes a thin film transistor disposed on the substrate, an EL device including a lower electrode connected to the thin film transistor, a pixel isolation layer exposing a portion of the lower electrode, an organic layer formed on at least the exposed portion of the lower electrode, and an upper electrode. A pad interconnection line of a pad interconnection region is covered by a first insulating layer, and a pad of a pad region is covered by a second insulating layer so as to expose a portion of the pad. The first insulating layer and the second insulating layer are formed of the same material as a lower layer of the pixel isolation layer.

Abstract translation: 公开了一种具有简单的制造工艺和改善寿命和可靠性的有机发光显示器件（OLED）器件及其制造方法。 OLED器件包括：衬底; 密封构件，其密封布置在像素区域上的多个像素; 以及密封材料，其结合基板和密封构件。 每个像素包括设置在基板上的薄膜晶体管，包括连接到薄膜晶体管的下电极的EL器件，暴露下电极的一部分的像素隔离层，至少形成在暴露部分上的有机层 的下电极和上电极。 焊盘互连区域的焊盘互连线被第一绝缘层覆盖，并且焊盘区域的焊盘被第二绝缘层覆盖以暴露焊盘的一部分。 第一绝缘层和第二绝缘层由与像素隔离层的下层相同的材料形成。

公开(公告)号：US20070238227A1

公开(公告)日：2007-10-11

申请号：US11783097

申请日：2007-04-05

Applicant: Woo-Sik Jun ,  Kyung-Jin Yoo ,  Choong-Youl Im ,  Jong-Hyun Choi ,  Do-Hyun Kwon

Inventor： Woo-Sik Jun ,  Kyung-Jin Yoo ,  Choong-Youl Im ,  Jong-Hyun Choi ,  Do-Hyun Kwon

IPC: H01L21/84 ,  H01L21/00

CPC classification number: H01L27/1255

Abstract: Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a capacitor region. A TFT is formed in the TFT region and a capacitor is formed in the capacitor region. The TFT includes an active layer that includes a source and a drain regions. A gate insulation layer is formed on the active layer, and a gate electrode is formed on the gate insulation layer over the active layer. A source and a drain electrodes are formed over the active layer, and connected to the source and drain regions, respectively. In the TFT region, an interlayer insulation layer is formed between the gate electrode and the source/drain electrodes. In the capacitor region, an interlayer insulation layer is formed between a capacitor lower electrode and a capacitor upper electrode to form a capacitor. The interlayer insulation layers of the TFT region and the capacitor region have different layer structures and have different dielectric constants. Therefore, the capacitor region can have higher capacitance while the TFT region can have lower capacitance to reduce parasitic capacitance.

Abstract translation: 提供了一种薄膜晶体管（TFT）面板，其制造方法和包括该薄膜晶体管的有机发光显示装置（OLED）。 TFT面板具有TFT区域和电容器区域。 在TFT区域中形成TFT，在电容器区域形成电容器。 TFT包括有源层，其包括源区和漏区。 在有源层上形成栅极绝缘层，并且在有源层上的栅极绝缘层上形成栅电极。 源极和漏极形成在有源层上方，分别连接到源极和漏极区。 在TFT区域中，在栅极电极和源极/漏极之间形成层间绝缘层。 在电容器区域中，在电容器下电极和电容器上电极之间形成层间绝缘层，形成电容器。 TFT区域和电容器区域的层间绝缘层具有不同的层结构并具有不同的介电常数。 因此，电容器区域可以具有更高的电容，而TFT区域可以具有较低的电容以减小寄生电容。

公开(公告)号：US20070052352A1

公开(公告)日：2007-03-08

申请号：US11517277

申请日：2006-09-08

Applicant: Choong-Youl Im ,  Kyung-Jin Yoo ,  Woo-Sik Jun ,  Do-hyun Kwon ,  Tae-Wook Kang

Inventor： Choong-Youl Im ,  Kyung-Jin Yoo ,  Woo-Sik Jun ,  Do-hyun Kwon ,  Tae-Wook Kang

IPC: H01J1/62 ,  H01J63/04

CPC classification number: H01L51/5203 ,  H01L27/3246 ,  H01L27/3258

Abstract: An organic light emitting display device (OLED) and a method of fabricating the same. The OLED includes: a substrate; a thin film transistor on the substrate and including a source electrode and a drain electrode; a first insulating layer on the substrate having the source and drain electrodes; a second insulating layer on the first insulating layer and including a trench; a via hole formed in the trench over the first and second insulating layers and exposing a portion of the source electrode or the drain electrode; a first electrode in the trench and connected to one of the source electrode and the drain electrode through the via hole; a pixel defining layer on the first electrode and having an opening exposing the first electrode; an organic layer in the opening and having at least an organic emission layer; and a second electrode on an entire surface of the substrate having the organic layer.

Abstract translation: 一种有机发光显示装置（OLED）及其制造方法。 OLED包括：基底; 薄膜晶体管，其包括源电极和漏电极; 在所述衬底上的具有所述源极和漏极的第一绝缘层; 在所述第一绝缘层上的第二绝缘层，并且包括沟槽; 通孔，形成在所述沟槽中，在所述第一绝缘层和所述第二绝缘层上并暴露所述源电极或所述漏电极的一部分; 沟槽中的第一电极，并通过通孔与源电极和漏极之一连接; 第一电极上的像素限定层，并具有暴露第一电极的开口; 所述开口中的有机层至少具有有机发光层; 以及在具有有机层的基板的整个表面上的第二电极。