公开(公告)号：US09653691B2

公开(公告)日：2017-05-16

申请号：US13711751

申请日：2012-12-12

申请人： Woo-Young So ,  Jui-Yi Tsai

发明人： Woo-Young So ,  Jui-Yi Tsai

IPC分类号： H01L51/00 ,  C07F15/00 ,  H01L51/50

CPC分类号： H01L51/0085 ,  C07F15/0033 ,  H01L51/009 ,  H01L51/5012 ,  H01L51/5016 ,  H01L51/5028

摘要： Novel molecules are provided that include a sensitizer group, an acceptor group, and an electron-transfer barrier that suppresses triplet-triplet energy transfer between the sensitizer group and the acceptor group. Organic light emitting devices (OLEDs) that include a layer including these novel molecules are also provided. These devices may be used to provide highly efficient OLEDs with longer operational lifetime.

公开(公告)号：US08502445B2

公开(公告)日：2013-08-06

申请号：US13185063

申请日：2011-07-18

申请人： Peter Levermore ,  Woo-Young So ,  Michael Weaver ,  Michael Hack

发明人： Peter Levermore ,  Woo-Young So ,  Michael Weaver ,  Michael Hack

IPC分类号： H01L51/00

CPC分类号： H01L27/3213 ,  H01L51/5036

摘要： A first device is provided that includes a first light source that has at least one organic light emitting device that may emit near white light having a correlated color temperature (CCT) that is less than 6504K. The first device may also have a plurality of pixels comprising a first sub-pixel having a color filter in optical communication with the first light source that passes light having a peak wavelength between 400 and 500 nm. A second sub-pixel having a color filter in optical communication with the first light source that passes light having a peak wavelength between 500 and 580 nm. A third sub-pixel having a color filter in optical communication with the first light source that passes light having a peak wavelength between 580 and 700 nm. A fourth sub-pixel that emits near white light that may have a CCT that is less than 6504 K.

摘要翻译： 提供了第一装置，其包括具有至少一个有机发光装置的第一光源，所述有机发光装置可以发射具有小于6504K的相关色温（CCT）的白光附近。 第一装置还可以具有多个像素，其包括具有滤色器的第一子像素，第一子像素与第一光源光通信，所述滤色器透过峰值波长在400和500nm之间的光。 具有与第一光源光通信的彩色滤光片的第二子像素，其通过具有500和580nm之间的峰值波长的光。 具有与第一光源光通信的滤色器的第三子像素，所述滤色器使峰值波长在580和700nm之间的光通过。 发射近白光的第四子像素，其可以具有小于6504K的CCT。

公开(公告)号：US07488982B2

公开(公告)日：2009-02-10

申请号：US10068004

申请日：2002-02-08

申请人： Woo Young So ,  Kyung Jin Yoo ,  Sang Il Park

发明人： Woo Young So ,  Kyung Jin Yoo ,  Sang Il Park

IPC分类号： H01L29/04

CPC分类号： H01L29/66757 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458

摘要： A method of manufacturing a thin film transistor (TFT) which is manufactured such that source and drain electrodes directly contact source and drain regions without contact holes.

公开(公告)号：US07235435B2

公开(公告)日：2007-06-26

申请号：US11011584

申请日：2004-12-15

申请人： Woo-Young So

发明人： Woo-Young So

IPC分类号： H01L21/00

CPC分类号： H01L29/78696 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/6675 ,  H01L29/78609 ,  H01L29/78645

摘要： A thin film transistor with multiple gates using an MILC process which is capable of materializing multiple gates without increasing dimensions and a method thereof. The thin film transistor has a semiconductor layer which is formed on a insulating substrate in a zigzag shape; and a gate electrode which is equipped with one or more slots intersecting with the semiconductor layer, the semiconductor layer includes two or more body parts intersecting with the gate electrode; and one or more connection parts connecting each neighboring body part, wherein a part overlapping the semiconductor layer in the gate electrode acts as a multiple gate, and MILC surfaces are formed at a part which does not intersect with the gate electrode in the semiconductor layer.

摘要翻译： 一种具有使用MILC工艺的多个栅极的薄膜晶体管，其能够实现多个栅极而不增加其尺寸及其方法。 薄膜晶体管具有以Z字形形成在绝缘基板上的半导体层; 以及配置有与所述半导体层交叉的一个以上的槽的栅电极，所述半导体层包括与所述栅电极交叉的两个以上的主体部; 以及一个或多个连接每个相邻主体部分的连接部分，其中与栅电极中的半导体层重叠的部分用作多栅极，并且MILC表面形成在半导体层中不与栅电极不相交的部分。

公开(公告)号：US07176493B2

公开(公告)日：2007-02-13

申请号：US10736703

申请日：2003-12-17

申请人： Woo Young So ,  Kyung Jin Yoo ,  Sang Il Park

发明人： Woo Young So ,  Kyung Jin Yoo ,  Sang Il Park

IPC分类号： H01L21/84

CPC分类号： G02F1/136227 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66757

摘要： The present invention discloses a method of manufacturing an active matrix display device, comprising: a) forming a semiconductor layer on an insulating substrate; b) forming a gate insulating layer over the whole surface of the substrate while convering the semiconductor layer; c) forming a gate electrode on the gate insulating layer over the semiconductor layer; d) forming spacers on both side wall portions of the gate electrode while exposing both end portions of the semiconductor layer; e) ion-implaing a high-density impurity into the semiconductor layer to form high-density source and drain regions in the semiconductor layer; f) depositing sequentially a transparent conductive layer and a metal layer on the inter insulating layer; g) patterning the transparent conductive layer and the metal layer to form the source and drain electrodes, the source and drain electrodes directly contacting the high-density source and drain regions and having a dual-layered structure; h) forming a passivation layer over the whole surface of the substrate; i) etching the passivation layer and the metal layer to form an opening portion exposing a portions of the transparent conductive layer, thereby forming a pixel electrode; and j) performing a reflow process to cover the metal layer in the opening portion by the passivation layer.

摘要翻译： 本发明公开了一种制造有源矩阵显示装置的方法，包括：a）在绝缘基板上形成半导体层; b）在半导体层会聚的同时在衬底的整个表面上形成栅极绝缘层; c）在半导体层上的栅极绝缘层上形成栅电极; d）在露出半导体层的两个端部部分的同时，在栅电极的两个侧壁部分上形成间隔物; e）将高密度杂质离子注入到半导体层中以在半导体层中形成高密度源极和漏极区; f）在所述绝缘层上依次沉积透明导电层和金属层; g）图案化透明导电层和金属层以形成源极和漏极，源极和漏极直接接触高密度源极和漏极区并具有双层结构; h）在衬底的整个表面上形成钝化层; i）蚀刻钝化层和金属层以形成露出透明导电层的一部分的开口部分，从而形成像素电极; 和j）进行回流处理以通过钝化层覆盖开口部分中的金属层。

公开(公告)号：US06706573B2

公开(公告)日：2004-03-16

申请号：US10114463

申请日：2002-04-03

申请人： Woo-Young So

发明人： Woo-Young So

IPC分类号： H01L2184

CPC分类号： H01L29/78696 ,  H01L29/66757

摘要： A method of manufacturing a thin film transistor that provides high electric field mobility is disclosed. The method comprising: a) forming an amorphous silicon layer and a blocking layer on an insulating substrate; b) forming a photoresist layer having first and second photoresist patterns on the blocking layer, the first and second photoresist patterns spaced apart from each other; c) etching the blocking layer using the first photoresist pattern as a mask to form first and second blocking patterns; d) reflowing the photoresist layer, so that the first and second photoresist patterns abut on each other to entirely cover the first and second blocking patterns; e) forming a metal layer over the entire surface of the insulating substrate; f) removing the photoresist layer to expose the blocking layer and an offset region between the blocking layer and the metal layer; g) crystallizing the amorphous silicon layer to form a poly silicon layer, wherein a portion of the amorphous silicon layer directly contacting the first metal layer is crystallized through a metal induced crystallization (MIC), and the remaining portion of the amorphous silicon layer is crystallized through a metal induced lateral crystallization (MILC), so that a MILC front exists on a portion of the poly silicon layer between the first and second blocking patterns; h) etching the poly silicon layer using the first and second blocking patterns as a mask to form first and second semiconductor layers and to remove the MILC front; and i) removing the first and second blocking patterns.

摘要翻译： 公开了制造提供高电场迁移率的薄膜晶体管的方法。 该方法包括：a）在绝缘基板上形成非晶硅层和阻挡层; b）在所述阻挡层上形成具有第一和第二光致抗蚀剂图案的光致抗蚀剂层，所述第一和第二光致抗蚀剂图案彼此间隔开; c）使用第一光致抗蚀剂图案作为掩模蚀刻阻挡层以形成第一和第二阻挡图案; d）回流光致抗蚀剂层，使得第一和第二光致抗蚀剂图案彼此邻接以完全覆盖第一和第二阻挡图案; e）在绝缘基板的整个表面上形成金属层; f）去除光致抗蚀剂层以暴露阻挡层和阻挡层与金属层之间的偏移区域; g）使非晶硅层结晶以形成多晶硅层，其中直接接触第一金属层的部分非晶硅层通过金属诱导结晶（MIC）结晶，并且非晶硅层的剩余部分结晶 通过金属诱导横向结晶（MILC），使得MILC前沿存在于第一和第二阻挡图案之间的多晶硅层的一部分上; h）使用第一和第二阻挡图案作为掩模蚀刻多晶硅层以形成第一和第二半导体层并去除MILC前面; 和i）去除第一和第二阻挡图案。

公开(公告)号：US09123667B2

公开(公告)日：2015-09-01

申请号：US13252491

申请日：2011-10-04

申请人： Woo-Young So ,  Michael Weaver

发明人： Woo-Young So ,  Michael Weaver

IPC分类号： H01L27/32 ,  H01L51/54 ,  H01L51/50

CPC分类号： H01L27/3213 ,  H01L27/322 ,  H01L51/5036

摘要： Embodiments described herein may provide for devices comprising a power efficient RGBW display. In some embodiments, a first device may be provided. The first device may include at least one pixel. The pixel may include a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel. The first sub-pixel may include a first color filter in optical communication with a first organic light emitting device. The second sub-pixel may include a second color filter in optical communication with a second organic light emitting device. The third sub-pixel may include a third color filter in optical communication with a third organic light emitting device. The fourth sub-pixel may include a fourth organic light emitting device and emits near white light. At least one of the first sub-pixel or the second sub-pixel may include a color conversion layer in optical communication with the first or second organic light emitting device.

摘要翻译： 本文描述的实施例可以提供包括功率有效的RGBW显示器的设备。 在一些实施例中，可以提供第一设备。 第一设备可以包括至少一个像素。 像素可以包括第一子像素，第二子像素，第三子像素和第四子像素。 第一子像素可以包括与第一有机发光器件光学通信的第一滤色器。 第二子像素可以包括与第二有机发光器件光学通信的第二滤色器。 第三子像素可以包括与第三有机发光器件光学通信的第三滤色器。 第四子像素可以包括第四有机发光器件并且发射近白光。 第一子像素或第二子像素中的至少一个可以包括与第一或第二有机发光器件光学通信的颜色转换层。

公开(公告)号：US20120256938A1

公开(公告)日：2012-10-11

申请号：US13082052

申请日：2011-04-07

申请人： Woo-Young So

发明人： Woo-Young So

IPC分类号： G09G5/02

CPC分类号： G09G3/3208 ,  G09G2300/0443 ,  G09G2300/0452 ,  G09G2320/046 ,  G09G2320/0693 ,  G09G2340/06

摘要： A device that may be used as a multi-color pixel is provided. The device has a first organic light emitting device, a second organic light emitting device, a third organic light emitting device, and a fourth organic light emitting device. The device may be a pixel of a display having four sub-pixels. The first device may emit red light, the second device may emit green light, the third device may emit light blue light and the fourth device may emit deep blue light. A method of displaying an image on such a display is also provided, where the image signal may be in a format designed for use with a three sub-pixel architecture, and the method involves conversion to a format usable with the four sub-pixel architecture.

摘要翻译： 提供了可以用作多色像素的装置。 该器件具有第一有机发光器件，第二有机发光器件，第三有机发光器件和第四有机发光器件。 该装置可以是具有四个子像素的显示器的像素。 第一装置可以发射红光，第二装置可以发射绿光，第三装置可以发射浅蓝光，并且第四装置可以发射深蓝光。 还提供了一种在这种显示器上显示图像的方法，其中图像信号可以是被设计为与三个子像素结构一起使用的格式，并且该方法涉及转换成可用于四个子像素结构的格式 。

公开(公告)号：US20110127506A1

公开(公告)日：2011-06-02

申请号：US12954246

申请日：2010-11-24

申请人： Woo-Young So

发明人： Woo-Young So

IPC分类号： H01L51/52

CPC分类号： H01L27/3213 ,  H01L51/5016

摘要： A device such as a display region that includes a plurality of multi-color pixels is provided. Each pixel may have several types of organic light emitting devices that operate as sub-pixels, and at least one type of device may be shared by multiple pixels. Less-used and/or more efficient device types, such as deep blue and green light emitting devices, may be shared between multiple pixels, leading to an improved aperture ratio and fill factor for the device.

摘要翻译： 提供了诸如包括多个多色像素的显示区域的装置。 每个像素可以具有几种类型的作为子像素操作的有机发光器件，并且至少一种类型的器件可被多个像素共享。 较少使用和/或更有效的器件类型（例如深蓝色和绿色发光器件）可以在多个像素之间共享，从而提高器件的开口率和填充因子。

公开(公告)号：US20100330737A1

公开(公告)日：2010-12-30

申请号：US12875902

申请日：2010-09-03

申请人： Christian Leo Kloc ,  Arthur Penn Ramirez ,  Woo-Young So

发明人： Christian Leo Kloc ,  Arthur Penn Ramirez ,  Woo-Young So

IPC分类号： H01L51/30

CPC分类号： H01L51/002 ,  H01L51/0036 ,  H01L51/0071 ,  H01L51/0074 ,  H01L51/0512

摘要： A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.

摘要翻译： 一种方法包括以下步骤：形成邻接的半导体区域并加热该区域。 半导体区域包括多芳族分子。 加热将半导体区域升高到高于室温的温度。 在存在掺杂气体和不存在光的情况下进行加热以形成掺杂的有机半导体区域。