公开(公告)号：US20130246822A1

公开(公告)日：2013-09-19

申请号：US13430706

申请日：2012-03-27

Applicant: XUE-BING DENG ,  TAO WANG ,  HAI-LONG CHENG

Inventor： XUE-BING DENG ,  TAO WANG ,  HAI-LONG CHENG

IPC: G06F1/32

CPC classification number: G06F1/3203 ,  H02J9/005

Abstract: An electronic device with standby state includes a MCU, a voltage conversion unit, a screen lock circuit, and a power-saving trigger circuit. The voltage conversion unit is connected to the MCU and is used to convert a power supply voltage to a suitable voltage to power the MCU. The screen lock circuit includes a switch, therein, the screen lock circuit is connected to the MCU and is used to lock or unlock the electronic device in response to an operation on the switch when the electronic device is in a work state. The power-saving trigger circuit is connected to the MCU, the voltage conversion unit, and the screen lock circuit, and is used to disable or enable the voltage conversion unit in response to the operation on the switch when the electronic device is in the standby state.

Abstract translation: 具有待机状态的电子设备包括MCU，电压转换单元，屏幕锁定电路和省电触发电路。 电压转换单元连接到MCU，用于将电源电压转换为合适的电压为MCU供电。 屏幕锁定电路包括开关，其中屏幕锁定电路连接到MCU，并且当电子设备处于工作状态时，响应于开关上的操作而用于锁定或解锁电子设备。 省电触发电路连接到MCU，电压转换单元和屏幕锁定电路，用于在电子设备处于待机状态时响应于开关上的操作禁用或启用电压转换单元 州。

公开(公告)号：US20130229163A1

公开(公告)日：2013-09-05

申请号：US13430704

申请日：2012-03-27

Applicant: XUE-BING DENG ,  TAO WANG ,  HAI-LONG CHENG ,  XIAO-HUI MA ,  XIN-PING LI

Inventor： XUE-BING DENG ,  TAO WANG ,  HAI-LONG CHENG ,  XIAO-HUI MA ,  XIN-PING LI

IPC: G05F5/00

CPC classification number: H03K17/082 ,  H02H9/04

Abstract: An overvoltage protection circuit is arranged in an electronic device for providing a proper working voltage to the electronic device. The overvoltage protection circuit includes a first selecting circuit and a second selecting circuit connected in parallel to the first selecting circuit between a voltage input port and a voltage output port of the overvoltage protecting circuit. When an input voltage from the input port is less than a first value, the input voltage is output to the output port directly through the first selecting circuit, and when the input voltage is greater than the first value, the input voltage is output to the output port after the value of the input voltage is reduced through the second selecting circuit.

Abstract translation: 在电子设备中布置过电压保护电路，以向电子设备提供适当的工作电压。 过电压保护电路包括与过电压保护电路的电压输入端口和电压输出端口之间并联连接到第一选择电路的第一选择电路和第二选择电路。 当来自输入端口的输入电压小于第一值时，输入电压通过第一选择电路直接输出到输出端口，当输入电压大于第一值时，输入电压输出到 通过第二选择电路减小输入电压值之后的输出端口。

公开(公告)号：US20120286368A1

公开(公告)日：2012-11-15

申请号：US13558109

申请日：2012-07-25

Applicant: Harry Chuang ,  Kong-Beng Thei ,  Jen-Bin Hsu ,  Chung Long Cheng ,  Mong Song Liang

Inventor： Harry Chuang ,  Kong-Beng Thei ,  Jen-Bin Hsu ,  Chung Long Cheng ,  Mong Song Liang

IPC: H01L27/088

CPC classification number: H01L27/0207 ,  H01L27/11 ,  H01L27/1104

Abstract: A semiconductor structure includes an array of unit metal-oxide-semiconductor (MOS) devices arranged in a plurality of rows and a plurality of columns is provided. Each of the unit MOS devices includes an active region laid out in a row direction and a gate electrode laid out in a column direction. The semiconductor structure further includes a first unit MOS device in the array and a second unit MOS device in the array, wherein active regions of the first and the second unit MOS devices have different conductivity types.

Abstract translation: 半导体结构包括以多行排列的单位金属氧化物半导体（MOS）器件的阵列，并且提供多个列。 每个单位MOS器件包括布置在行方向上的有源区和沿列方向布置的栅电极。 半导体结构还包括阵列中的第一单元MOS器件和阵列中的第二单元MOS器件，其中第一和第二单位MOS器件的有源区具有不同的导电类型。

公开(公告)号：US07930590B2

公开(公告)日：2011-04-19

申请号：US12014209

申请日：2008-01-15

Applicant: Long Cheng ,  Ying Chen ,  Dong Jun Lan ,  Qingbo Wang ,  Meng Ye

Inventor： Long Cheng ,  Ying Chen ,  Dong Jun Lan ,  Qingbo Wang ,  Meng Ye

IPC: G06F11/00

CPC classification number: G06F11/3664 ,  G06F11/366

Abstract: A system, method and program enabling users to diagnose applications easily without affecting the operating performance of the application server, optimizing the log mechanism based on the integrated development environment. The method includes running the application in a main running environment and at least one shadow environment, the shadow environment obtained by duplicating the main running environment; and the main running environment interacting with the shadow environment with respect to the fault of the application. The method includes performing the steps of the main running environment: monitoring the exceptions in the system and sending system exception information to the shadow environment in the event of finding exceptions in the system. The shadow environment: receives the system exception information, opens diagnostic log/trace functions to obtain diagnosis log/trace files related to the system exceptions, and analyzes the diagnosis result based on the obtained diagnosis log/trace files.

Abstract translation: 一种系统，方法和程序，使用户能够轻松地诊断应用程序，而不会影响应用程序服务器的运行性能，基于集成开发环境优化日志机制。 该方法包括在主运行环境和至少一个影子环境中运行应用程序，通过复制主运行环境获得的影子环境; 以及与应用程序故障相关的主要运行环境与影子环境相互作用。 该方法包括执行主要运行环境的步骤：在发现系统异常的情况下，监视系统中的异常并将系统异常信息发送到影子环境。 影子环境：接收系统异常信息，打开诊断日志/跟踪功能，获取与系统异常相关的诊断日志/跟踪文件，并根据获取的诊断日志/跟踪文件分析诊断结果。

公开(公告)号：US20110065459A1

公开(公告)日：2011-03-17

申请号：US12558782

申请日：2009-09-14

Applicant: Long Cheng ,  Yi Xie

Inventor： Long Cheng ,  Yi Xie

IPC: G06F13/14 ,  H04W24/00

CPC classification number: G06F3/017 ,  G06F3/04842 ,  G06F3/0488 ,  H04M1/7253 ,  H04M2250/22 ,  H04M2250/64 ,  H04W4/02 ,  H04W4/023 ,  H04W4/21

Abstract: Content transfer involving a gesture is described. In an implementation, a method is implemented by a mobile communications device that includes recognizing a gesture input via a touchscreen of the mobile communications device that is indicative of a direction, the touchscreen including a display of content. One or more other mobile communications devices are located that are positioned, approximately, along the indicated direction of the gesture. A communication is formed to transfer the content to the located one or more other mobile communications devices.

Abstract translation: 描述涉及手势的内容传送。 在实现中，一种移动通信设备实现了一种方法，该移动通信设备包括通过移动通信设备的触摸屏识别指示方向的手势输入，所述触摸屏包括内容的显示。 定位一个或多个其它移动通信设备，其大致沿指示的手势方向定位。 形成通信以将内容传送到所定位的一个或多个其他移动通信设备。

公开(公告)号：US20090298243A1

公开(公告)日：2009-12-03

申请号：US12468131

申请日：2009-05-19

Applicant: Chung-Long Cheng ,  Kong-Beng Thei ,  Sheng-Chen Chung ,  Tzung-Chi Lee ,  Harry Chuang

Inventor： Chung-Long Cheng ,  Kong-Beng Thei ,  Sheng-Chen Chung ,  Tzung-Chi Lee ,  Harry Chuang

IPC: H01L21/336

CPC classification number: H01L21/84 ,  H01L27/1203 ,  H01L29/4238 ,  H01L29/78636

Abstract: Silicon on insulator (SOI) devices and methods for fabricating the same are provided. An exemplary embodiment of a SOI device comprises a substrate. A first insulating layer is formed over the substrate. A plurality of semiconductor islands is formed over the first insulating layer, wherein the semiconductor islands are isolated from each other. A second insulating layer is formed over the first insulating layer, protruding over the semiconductor islands and surrounding thereof. At least one recess is formed in a portion of the second insulating layer adjacent to a pair of the semiconductor islands. A first dielectric layer is formed on a portion of each of the semiconductor islands. A conductive layer is formed over the first dielectric layer and over the second insulating layer exposed by the recess. A pair of source/drain regions is oppositely formed in portions of each of the semiconductor islands not covered by the first dielectric layer and the conductive layer.

Abstract translation: 提供绝缘体上硅（SOI）器件及其制造方法。 SOI器件的示例性实施例包括衬底。 在衬底上形成第一绝缘层。 在第一绝缘层上形成多个半导体岛，其中半导体岛彼此隔离。 在第一绝缘层上形成第二绝缘层，突出在半岛上并围绕它们。 在与一对半导体岛相邻的第二绝缘层的一部分中形成至少一个凹部。 第一电介质层形成在每个半导体岛的一部分上。 导电层形成在第一电介质层之上，并在由凹部露出的第二绝缘层之上。 一对源极/漏极区域相对地形成在未被第一介电层和导电层覆盖的半导体岛的每一个的部分中。

公开(公告)号：US20090063621A1

公开(公告)日：2009-03-05

申请号：US11847287

申请日：2007-08-29

Applicant: Long Cheng ,  Catherine C. Diep ,  Dong Jun Lan ,  Sheng S. Lu ,  Luis J. Ostdiek ,  Qing Bo Wang ,  Meng Ye

Inventor： Long Cheng ,  Catherine C. Diep ,  Dong Jun Lan ,  Sheng S. Lu ,  Luis J. Ostdiek ,  Qing Bo Wang ,  Meng Ye

IPC: G06F15/16

CPC classification number: G06F17/30899 ,  H04L67/02 ,  H04L69/04

Abstract: An apparatus, system, and method are disclosed for reducing the loading time of a web page. In one embodiment, the apparatus, system, and method comprise requesting a web page from a web server, wherein requesting a web page from a web server comprises sending a browser parameter comprising an indicator to the web server, the indicator indicating that a browser is capable of receiving an archive. The present invention may further comprise receiving one or more archives from the web server, the one or more archives each comprising a plurality of archivable objects referenced by the web page, and rendering the web page using the plurality of archivable objects from the one or more archives.

公开(公告)号：US07495028B2

公开(公告)日：2009-02-24

申请号：US11053014

申请日：2005-02-08

Applicant: Wen Tan ,  Jiang Long Cheng

Inventor： Wen Tan ,  Jiang Long Cheng

IPC: A61K31/27 ,  C07C261/00

CPC classification number: C07C271/44 ,  Y02P20/55

Abstract: R-enantiomer of Bambuterol, its preparation and therapeutic uses are disclosed. A composition includes R-Bambuterol or its therapeutically acceptable salt. A composition of R-Bambuterol includes at least 80% by weight of the R-enantiomer and not more than 20% by weight of the S-enantiomer based on a total weight of the Bmbuterol. A process includes: (a) asymmetrically reducing a suitably substituted and suitably protected bromoacetophenone compound to a chiral phenyl-bromoethanol comprising a primary bromo group and a secondary hydroxyl group; (b) displacing the bromo group by a suitably substituted and optionally protected primary amine to produce a protected chiral phenylethanolamine, and (c) removing the protecting groups to convert the protected chiral phenylethanolamine to a chiral phenylethanolamine.

Abstract translation: 班布特罗的R-对映异构体，其制备和治疗用途被公开。 组合物包括R-班布特罗或其治疗上可接受的盐。 R-班布特罗的组合物包含至少80重量％的R-对映异构体和不超过20重量％的S-对映异构体，基于布替托罗的总重量。 方法包括：（a）将适当取代的适当保护的溴乙酰苯化合物不对称地还原成包含伯溴基和仲羟基的手性苯基 - 溴乙醇; （b）通过适当取代的和任选保护的伯胺置换溴基以产生受保护的手性苯乙醇胺，和（c）除去保护基团以将被保护的手性苯乙醇胺转化为手性苯乙醇胺。

公开(公告)号：US20090016551A1

公开(公告)日：2009-01-15

申请号：US11776555

申请日：2007-07-12

Applicant: DAR-MING CHIANG ,  YEN-REN CHEN ,  LONG-CHENG CHENG ,  I-CHEN LEE

Inventor： DAR-MING CHIANG ,  YEN-REN CHEN ,  LONG-CHENG CHENG ,  I-CHEN LEE

IPC: H04R25/00

CPC classification number: H04R19/01

Abstract: An electrostatic electroacoustic device comprising a first electrode configured to receive an audio signal, a second electrode configured to receive the audio signal, a first electret between the first electrode and the second electrode, the first electret including at least one dielectric layer containing electrostatic charges, a second electret between the first electrode and the second electrode, the second electret including at least one dielectric layer containing electrostatic charges, and a conductive layer sandwiched between the first electret and the second electret, the conductive layer, the first electret and the second electret being capable of vibratory motion relative to the first electrode and the second electrode based on the audio signal.

Abstract translation: 一种静电电声装置，包括被配置为接收音频信号的第一电极，被配置为接收音频信号的第二电极，第一电极和第二电极之间的第一驻极体，所述第一驻极体包括至少一个包含静电电荷的电介质层， 在所述第一电极和所述第二电极之间的第二驻极体，所述第二驻极体包括至少一个包含静电电荷的电介质层，以及夹在所述第一驻极体和所述第二驻极体之间的导电层，所述导电层，所述第一驻极体和所述第二驻极体 能够基于音频信号相对于第一电极和第二电极进行振动运动。

公开(公告)号：US20080076215A1

公开(公告)日：2008-03-27

申请号：US11527616

申请日：2006-09-27

Applicant: Harry Chuang ,  Kong-Beng Thei ,  Chung-Long Cheng ,  Sheng-Chen Chung ,  Wen-Huei Guo ,  Jung-Hui Kao ,  Ryan Chia-Jen Chen ,  Mong-Song Liang

Inventor： Harry Chuang ,  Kong-Beng Thei ,  Chung-Long Cheng ,  Sheng-Chen Chung ,  Wen-Huei Guo ,  Jung-Hui Kao ,  Ryan Chia-Jen Chen ,  Mong-Song Liang

IPC: H01L21/8238

CPC classification number: H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/7843

Abstract: A method of manufacturing a semiconductor device is disclosed. The method provides a semiconductor substrate with at least a PMOS device and at least an NMOS device thereon. A first insulating layer is formed overlying the NMOS and PMOS devices. A second insulating layer is formed overlying the first insulating layer. The second insulating layer overlying the PMOS device is thinned to leave portion of the second insulating layer. A first thermal treatment is performed on the NMOS and PMOS devices. The second insulating layer overlying the NMOS device and the remaining portion of the second insulating layer overlying the PMOS device are removed and the first insulating layer overlying the NMOS and PMOS devices is thinned to leave a remaining portion thereof.

Abstract translation: 公开了制造半导体器件的方法。 该方法提供具有至少PMOS器件和至少NMOS器件的半导体衬底。 在NMOS和PMOS器件上形成第一绝缘层。 在第一绝缘层上形成第二绝缘层。 覆盖PMOS器件的第二绝缘层变薄以留下第二绝缘层的部分。 在NMOS和PMOS器件上进行第一次热处理。 去除覆盖NMOS器件的第二绝缘层和覆盖PMOS器件的第二绝缘层的剩余部分，并且覆盖NMOS和PMOS器件的第一绝缘层变薄以留下其余部分。