Formation of p-n homogeneous junctions
    15.
    发明授权
    Formation of p-n homogeneous junctions 有权
    形成p-n均质结

    公开(公告)号:US07768003B2

    公开(公告)日:2010-08-03

    申请号:US11855568

    申请日:2007-09-14

    Abstract: Methods, structures and devices are described, in which structures and devices have one or more p-n homo-junctions fabricated in solution. The junctions are formed by a sequential deposition of an oxide of copper from solution. Conduction type of the oxide of copper is controlled by pH of the solution.

    Abstract translation: 描述了方法,结构和装置,其中结构和装置在溶液中制造了一个或多个p-n均聚点。 通过从溶液中顺次沉积铜的氧化物形成结。 铜的氧化物的传导类型由溶液的pH控制。

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