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27 条记录 (耗时 0.019 秒)

    Digital load management for variable output energy systems
    2.
    发明授权
    Digital load management for variable output energy systems 有权

    公开(公告)号：US10399441B2

    公开(公告)日：2019-09-03

    申请号：US15350171

    申请日：2016-11-14

    申请人： Meng Tao

    发明人： Meng Tao

    IPC分类号： H02J3/38 ,  B60L11/18 ,  H02J13/00 ,  H02J1/14 ,  H02J7/35 ,  B60L53/30 ,  B60L53/63 ,  B60L53/51 ,  H02J7/00

    摘要： Principles of the present disclosure present a new concept for solar photovoltaic systems wherein the load to the photovoltaic system is digitally managed. This allows for much higher system efficiency along with a much lower system cost as compared to traditional solar photovoltaic systems in specific applications. By eliminating storage and power electronics typically present in traditional solar photovoltaic systems, exemplary systems achieve a cost reduction of over 50%, while the system efficiency is improved to over 95%.

    Formation of p-n homogeneous junctions
    4.
    发明授权
    Formation of p-n homogeneous junctions 有权
    形成p-n均质结

    公开(公告)号：US07768003B2

    公开(公告)日：2010-08-03

    申请号：US11855568

    申请日：2007-09-14

    申请人： Meng Tao ,  Longcheng Wang

    发明人： Meng Tao ,  Longcheng Wang

    IPC分类号： H01L29/10

    CPC分类号： H01L31/068 ,  H01L31/032 ,  H01L31/0445 ,  H01L31/18 ,  Y02E10/547

    摘要： Methods, structures and devices are described, in which structures and devices have one or more p-n homo-junctions fabricated in solution. The junctions are formed by a sequential deposition of an oxide of copper from solution. Conduction type of the oxide of copper is controlled by pH of the solution.

    摘要翻译： 描述了方法，结构和装置，其中结构和装置在溶液中制造了一个或多个p-n均聚点。 通过从溶液中顺次沉积铜的氧化物形成结。 铜的氧化物的传导类型由溶液的pH控制。

    N-type doping in metal oxides and metal chalcogenides by electrochemical methods
    7.
    发明授权
    N-type doping in metal oxides and metal chalcogenides by electrochemical methods 有权
    通过电化学方法在金属氧化物和金属硫族化物中进行N型掺杂

    公开(公告)号：US08212246B2

    公开(公告)日：2012-07-03

    申请号：US12540933

    申请日：2009-08-13

    申请人： Meng Tao ,  Xiaofei Han

    发明人： Meng Tao ,  Xiaofei Han

    IPC分类号： H01L29/10

    CPC分类号： C25D3/56 ,  C25D5/50

    摘要： Methods and systems for electrochemically depositing doped metal oxide and metal chalcogenide films are disclosed. An example method includes dissolving a metal precursor into a solution, adding a halogen precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit halogen doped metal oxide or metal chalcogenide onto a substrate. Another example method includes dissolving a zinc precursor into a solution, adding an yttrium precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit yttrium doped zinc oxide onto a substrate. Other embodiments are described and claimed.

    摘要翻译： 公开了用于电化学沉积掺杂的金属氧化物和金属硫族化物膜的方法和系统。 一种示例性方法包括将金属前体溶解在溶液中，向溶液中加入卤素前体，并在电化学电池的工作电极和对电极之间施加电势，以将卤素掺杂的金属氧化物或金属硫族化物沉积到衬底上。 另一个示例性方法包括将锌前体溶解到溶液中，向溶液中加入钇前体，以及在电化学电池的工作电极和对电极之间施加电势，以将掺杂掺杂钇的氧化锌沉积到衬底上。 描述和要求保护其他实施例。

    SPRAY PYROLYSIS OF Y-DOPED ZnO
    8.
    发明申请
    SPRAY PYROLYSIS OF Y-DOPED ZnO 审中-公开
    Y掺杂ZnO的喷涂热解

    公开(公告)号：US20120061836A1

    公开(公告)日：2012-03-15

    申请号：US12883170

    申请日：2010-09-15

    申请人： Lilly Q. Guo ,  Meng Tao ,  Kunhee Han

    发明人： Lilly Q. Guo ,  Meng Tao ,  Kunhee Han

    IPC分类号： H01L23/532 ,  B05D5/12 ,  H05K1/09

    CPC分类号： C23C18/1258 ,  C23C18/1216 ,  C23C18/1291 ,  C23C18/1295

    摘要： One example embodiment includes a method for applying a transparent conducting oxide. The method includes providing a solution, where the solution includes a solvent, a zinc precursor and an yttrium precursor. The method also includes spraying the solution on a heated substrate, where the heated substrate turns the solution into an yttrium-doped zinc oxide film. The method further includes annealing the film on the substrate in a controlled environment.

    摘要翻译： 一个示例性实施例包括用于施加透明导电氧化物的方法。 该方法包括提供溶液，其中溶液包括溶剂，锌前体和钇前体。 该方法还包括将溶液喷涂在加热的基底上，其中加热的基底将溶液转变成掺杂钇的氧化锌膜。 该方法还包括在受控环境中对基底上的膜进行退火。

    Method for actuating a system on chip (SOC) and computer system medium thereof
    9.
    发明授权
    Method for actuating a system on chip (SOC) and computer system medium thereof 有权
    用于致动片上系统（SOC）及其计算机系统介质的方法

    公开(公告)号：US07694186B2

    公开(公告)日：2010-04-06

    申请号：US11892618

    申请日：2007-08-24

    申请人： Hsin-Chuan Chen ,  Meng-Tao Lee

    发明人： Hsin-Chuan Chen ,  Meng-Tao Lee

    IPC分类号： G06F11/00

    CPC分类号： G06F11/1417

    摘要： A method for actuating a system on chip (SOC) includes the following steps. First, determine whether the SOC is connected to a computer system via a communication connection. If no, determine whether a non-volatile memory of the SOC has an initial flag signal. If yes, read correction information stored in the non-volatile memory in response to the initial flag signal and set a corresponding first register of the SOC according to the correction information.

    摘要翻译： 用于致动片上系统（SOC）的方法包括以下步骤。 首先，确定SOC是否通过通信连接连接到计算机系统。 如果否，则确定SOC的非易失性存储器是否具有初始标志信号。 如果是，则响应于初始标志信号读取存储在非易失性存储器中的校正信息，并根据校正信息设置SOC的对应的第一寄存器。

    Modification of semiconductor surfaces in a liquid
    10.
    发明授权
    Modification of semiconductor surfaces in a liquid 失效
    液体中半导体表面的改性

    公开(公告)号：US07534729B2

    公开(公告)日：2009-05-19

    申请号：US11507223

    申请日：2006-08-21

    申请人： Meng Tao ,  Muhammad Y. Ali

    发明人： Meng Tao ,  Muhammad Y. Ali

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02052 ,  H01L21/306

    摘要： Compositions and methods are provided herein that include modifications to at least one surface of a silicon-based semiconductor material. Modifications occur in a liquid and comprise alterations of surface states, passivation, cleaning and/or etching of the surface, thereby providing an improved surface to the semiconductor material. Modifications of surface states include reduction or elimination of an electrically active state of the surface, wherein, at the atomic level, the surface binding characteristics are changed. Passivation includes the termination of dangling bonds on the surface of the semiconductor material.

    摘要翻译： 本文提供的组合物和方法包括对硅基半导体材料的至少一个表面的修饰。 修改发生在液体中，并且包括表面状态的改变，钝化，清洁和/或蚀刻表面，从而为半导体材料提供改进的表面。 表面状态的修改包括减少或消除表面的电活性状态，其中在原子级别改变表面结合特性。 钝化包括在半导体材料的表面上终止悬挂键。