公开(公告)号：US06569599B2

公开(公告)日：2003-05-27

申请号：US09852371

申请日：2001-05-10

申请人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

发明人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： G03F7/0758 ,  G03F7/0045 ,  G03F7/095 ,  Y10S430/106 ,  Y10S430/111

摘要： The present invention provides photoresist polymers, processes for producing the same, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist polymers of the present invention comprise a moiety of the Formula: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in thin resist processes and bilayer photoresist processes. Moreover, photoresist polymers of the present invention have a high contrast ratio between the exposed region and the non-exposed region.

摘要翻译： 本发明提供光致抗蚀剂聚合物，其制备方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光刻胶图案的方法。 特别地，本发明的光致抗蚀剂聚合物包含下式的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。 本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。 此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

公开(公告)号：US06548613B2

公开(公告)日：2003-04-15

申请号：US09747364

申请日：2000-12-22

申请人： Min-Ho Jung ,  Sung-Eun Hong ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Ho Baik

发明人： Min-Ho Jung ,  Sung-Eun Hong ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Ho Baik

IPC分类号： C08F22018

CPC分类号： C08F220/34 ,  G03F7/091

摘要： The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm), ArF (193 nm), or F2 (157 nm) laser as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield, of such semiconductor devices.

摘要翻译： 本发明提供可用作抗反射涂层（ARC）聚合物的聚合物，包含其的ARC组合物，其制备方法及其使用方法。 本发明的聚合物在亚微光刻工艺中特别有用，例如使用KrF（248nm），ArF（193nm）或F2（157nm）激光作为光源。 本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。 因此，本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。 本发明的ARC还显着地减少或消除驻波效应和反射性切口。 因此，本发明的聚合物可用于制备适合于制造64M，256M，1G，4G和16G DRAM半导体器件的稳定超细晶格。 此外，本发明的ARC显着提高了这种半导体器件的生产成本。

公开(公告)号：US06489423B2

公开(公告)日：2002-12-03

申请号：US10095852

申请日：2002-03-11

申请人： Min-ho Jung ,  Sung-eun Hong ,  Ki-ho Baik

发明人： Min-ho Jung ,  Sung-eun Hong ,  Ki-ho Baik

IPC分类号： C08F22012

CPC分类号： C08F220/34 ,  C07C251/66 ,  C08F2220/281 ,  C08F2220/325 ,  C08F220/14

摘要： Polymers are disclosed having the following formula 1 or 2: Polymers of the present invention can be used as an ARC material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain a chromophore substituent that exhibits sufficient absorbance at the wavelengths useful for the submicrolithography process. The ARC prevents back reflection of light from lower layers and the alteration of the CD by diffracted and reflected light from the lower layers. The ARC also eliminates standing waves and reflective notching due to the optical properties of lower layers on the wafer and to changes in the thickness of the photosensitive film applied thereon, thereby resulting in the stable formation of ultrafine patterns suitable for 64 M, 256 M, 1 G, 4 G and 16 G DRAMs and a great improvement in the production yield.

摘要翻译： 公开了具有下式1或2的聚合物：本发明的聚合物可以用作ARC光学材料，用于使用248nm KrF，193nm ArF和157nm F2激光的亚微光刻工艺。 聚合物含有在用于亚微光刻工艺的波长处表现出足够吸光度的发色团取代基。 ARC防止来自下层的光的背反射和来自下层的衍射和反射光的CD的改变。 由于晶片上的较低层的光学性质和施加在其上的感光膜的厚度的变化，ARC还消除了驻波和反射凹陷，从而导致适合于64M，256M， 1G，4G和16G DRAM，并且生产产量大大提高。

公开(公告)号：US06391518B1

公开(公告)日：2002-05-21

申请号：US09360402

申请日：1999-07-23

申请人： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

发明人： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： C08F232/08 ,  G03F7/0382 ,  G03F7/0395

摘要： The present invention provides a photoresist monomer represented by the following formula 2; a photoresist copolymer represented by the following formula 100; and a photoresist composition containing the same. wherein, R1 and R2 are independently —COOH or —R—COOH; and R is a substituted or unsubstituted (C1-C10) alkyl. wherein, R1 and R2 are independently —COOH or —R—COOH ; R is a substituted or unsubstituted (C1-C10) alkyl; R3 is —COOR* or —R′COOR*; R* is an acid labile group; R′ is a substituted or unsubstituted (C1-C10) alkyl; R4 is H or R3; R5 is a substituted or unsubstituted (C1-C10) alkyl; and a:b:c is the polymerization ratio of the comonomer.

摘要翻译： 本发明提供由下式2表示的光致抗蚀剂单体; 由下式100表示​​的光致抗蚀剂共聚物; 和含有它们的光致抗蚀剂组合物，其中R 1和R 2独立地是-COOH或-R-COOH; 并且R是取代或未取代的（C1-C10）烷基。其中R1和R2独立地是-COOH或-R-COOH; R是取代或未取代的（C 1 -C 10）烷基; R3是-COOR *或-R'COOR *; R *是酸不稳定组; R'是取代或未取代的（C 1 -C 10）烷基; R4是H或R3; R5是取代或未取代的（C1-C10）烷基; 和a：b：c是共聚单体的聚合比。

公开(公告)号：US06376632B1

公开(公告)日：2002-04-23

申请号：US09850177

申请日：2001-05-07

申请人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

发明人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

IPC分类号： C08F13204

CPC分类号： C07C59/46 ,  C07C57/26 ,  C07C59/80 ,  C07C69/608 ,  C07C69/732 ,  C07C69/738 ,  C08G61/08 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106

摘要： The present invention relates to a carboxyl-containing alicyclic compound represented by Chemical Formula 1: [formula 1] wherein, R1 and R2, which may be identical to or different from each other, represent hydrogen or a tert-butyl group; X represents hydrogen, hydroxy or oxygen; and n represents a number from 1 to 3. Compounds of the present invention are useful as monomers in a photoresist resin, and in a process for preparing the same.

摘要翻译： 本发明涉及由化学式1表示的含羧基脂环族化合物：[式1]其中R1和R2可以相同或不同，表示氢或叔丁基; X表示氢，羟基或氧; n表示1〜3的数。本发明的化合物可用作光致抗蚀剂树脂中的单体，也可用作其制备方法。

公开(公告)号：US06350818B1

公开(公告)日：2002-02-26

申请号：US09413679

申请日：1999-10-07

申请人： Sung-Eun Hong ,  Min-Ho Jung ,  Hyeong-Soo Kim ,  Ki-Ho Baik

发明人： Sung-Eun Hong ,  Min-Ho Jung ,  Hyeong-Soo Kim ,  Ki-Ho Baik

IPC分类号： C08F834

CPC分类号： C08F212/14 ,  C08F8/34 ,  G03F7/023 ,  G03F7/091 ,  C08F12/14 ,  C08F220/20

摘要： The present invention relates to organic anti-reflective coating polymers and preparation methods therefor. Anti-reflective coatings are used in a semiconductor device during photolithography processes to prevent the reflection of light from lower layers of the device, or resulting from changes in the thickness of the photoresist layer, and to eliminate the standing wave effect when ArF light is used. The present invention also relates to anti-reflective compositions and coatings containing these organic anti-reflective coating polymers, alone or in combination with certain light-absorbing compounds, and preparation methods therefor. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming submicro-patterns, the resultant elimination of changes in CD due to diffractive and reflective lights originating from lower layers increases the product yield in the formation of submicro-patterns during the manufacture of 64 M, 256 M, 1G, 4G and 16G DRAM semiconductor devices.

摘要翻译： 本发明涉及有机抗反射涂层聚合物及其制备方法。 在光刻工艺中，抗反射涂层用于半导体器件，以防止来自器件的下层的光的反射，或由于光致抗蚀剂层的厚度的变化而导致的，并且当使用ArF光时消除驻波效应 。 本发明还涉及包含这些有机抗反射涂层聚合物的抗反射组合物和涂层，其单独或与某些光吸收化合物组合，及其制备方法。 当本发明的聚合物在用于形成亚微图案的光刻工艺中用于抗反射涂层中时，由于衍生于较低层的衍射和反射光引起的CD的变化的消除增加了在形成 在64M，256M，1G，4G和16G DRAM半导体器件的制造期间的微小图案。

公开(公告)号：US06312865B1

公开(公告)日：2001-11-06

申请号：US09223510

申请日：1998-12-30

申请人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

发明人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

IPC分类号： G03F739

CPC分类号： C08F232/08 ,  C07C67/347 ,  C07C69/753 ,  C08F222/06

摘要： The present invention relates to a semiconductor device using a copolymer-containing photoresist, and a process for manufacturing the same. As a norbornene derivative (monomer) having a hydrophilic group is synthesized and introduced to the backbone chain of a polymer, the polymer according to the present invention has excellent etching resistance and heat resistance, which are the characteristic points of alicyclic olefin structure, and provide excellent resolution due to prominent enhancement of adhesiveness resulted from introducing a hydrophilic group (—OH).

摘要翻译： 本发明涉及使用含共聚物的光致抗蚀剂的半导体器件及其制造方法。 作为具有亲水基团的降冰片烯衍生物（单体）合成并引入到聚合物的主链中，本发明的聚合物具有优异的耐蚀性和耐热性，这是脂环式烯烃结构的特征点，并提供 由于引入亲水基团（-OH）导致的粘附性显着增强，因而具有优异的分辨率。

公开(公告)号：US20220202585A1

公开(公告)日：2022-06-30

申请号：US17135663

申请日：2020-12-28

申请人： Min Ho JUNG ,  ENDOVISION CO., LTD.

发明人： Min Ho JUNG ,  Sae Won EUM

IPC分类号： A61F2/44 ,  A61F2/46

摘要： Proposed are a guider for a spinal operation and a cage therefor. The guider includes a sliding portion configured to guide a cage for a spinal operation and a holder to a surgical site, a head of the sliding portion being inserted into a human body region where a surgical incision is made for the spinal operation, and the cage for a spinal operation being combined with the holder; a support portion combined with one side of the sliding portion and thus supporting the sliding portion; and a handle combined with the support portion.

公开(公告)号：US20190142407A1

公开(公告)日：2019-05-16

申请号：US15879808

申请日：2018-01-25

申请人： Min Ho Jung ,  Sang-Kyu Son ,  ENDOVISION CO., LTD.

发明人： Min Ho Jung ,  Sang-Kyu Son

IPC分类号： A61B17/02 ,  A61F2/46 ,  A61B18/14 ,  A61B1/045 ,  A61B1/06 ,  A61B17/16 ,  A61B17/00

摘要： The present invention relates generally to a method of unilateral biportal endoscopy and diamond shaver used in the same. The method includes: securing pathways for a working portal and an endoscopic portal that extend toward a surgical site in the body of a patient and are distanced from each other; inserting a surgical instrument required for surgery into the secured working portal; inserting an endoscope into the endoscopic portal; performing surgery using the surgical instrument inserted into the working portal while monitoring the surgical site through the endoscope; removing the surgical instrument and the endoscope after the performing the surgery; and suturing of suturing entrances of the working portal and the endoscopic portal.

公开(公告)号：US20120051495A1

公开(公告)日：2012-03-01

申请号：US13110638

申请日：2011-05-18

申请人： Jong-Tae HWANG ,  Min-Ho JUNG ,  Jun-Hong LEE ,  Seong-Joon PARK

发明人： Jong-Tae HWANG ,  Min-Ho JUNG ,  Jun-Hong LEE ,  Seong-Joon PARK

IPC分类号： H03K23/00

CPC分类号： H03K5/131 ,  H03K21/38

摘要： An apparatus configured to generate control data. The apparatus includes a counter unit configured to receive an input signal having a first state and a second state and counts the first state in the input signal, a delay unit configured to delay the count value for a predetermined time, and a data output unit configured to receive the delayed count value from the counter unit and then generate the control data based on the delayed count value.

摘要翻译： 一种被配置为产生控制数据的装置。 该装置包括：计数器单元，被配置为接收具有第一状态和第二状态的输入信号，并对输入信号中的第一状态进行计数;延迟单元，被配置为将计数值延迟预定时间;以及数据输出单元配置 从计数器单元接收延迟的计数值，然后基于延迟的计数值生成控制数据。