公开(公告)号：US20120074527A1

公开(公告)日：2012-03-29

申请号：US13230035

申请日：2011-09-12

Applicant: Fabrice Casset ,  Lionel Cadix ,  Perceval Coudrain ,  Alexis Farcy ,  Laúrent-Lüc Chapelon ,  Yacine Felk ,  Pascal Ancey

Inventor： Fabrice Casset ,  Lionel Cadix ,  Perceval Coudrain ,  Alexis Farcy ,  Laúrent-Lüc Chapelon ,  Yacine Felk ,  Pascal Ancey

IPC: H01L29/06 ,  H01L21/283

CPC classification number: B81C1/00246 ,  B81B2201/014 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2203/0353 ,  B81B2207/012 ,  B81C1/005 ,  G01P15/125 ,  G01P2015/082 ,  H01L2924/0002 ,  H03H3/0073 ,  H03H9/2426 ,  H01L2924/00

Abstract: The integrated circuit comprises a support substrate having opposite first and second main surfaces. A cavity passes through the support substrate and connects the first and second main surfaces. The integrated circuit comprises a device with a mobile element, the mobile element and a pair of associated electrodes of which are included in a cavity. An anchoring node of the mobile element is located at the level of the first main surface. The integrated circuit comprises a first elementary chip arranged at the level of the first main surface and electrically connected to the device with a mobile element.

Abstract translation: 集成电路包括具有相对的第一和第二主表面的支撑基板。 空腔通过支撑基板并连接第一和第二主表面。 集成电路包括具有移动元件的装置，移动元件和一对相关联的电极包括在空腔中。 移动元件的锚定节点位于第一主表面的水平面上。 集成电路包括布置在第一主表面的电平处的第一基本芯片，并与移动元件电连接到该装置。

公开(公告)号：US07902621B2

公开(公告)日：2011-03-08

申请号：US12398872

申请日：2009-03-05

Applicant: Perceval Coudrain ,  Philippe Coronel ,  Michel Marty ,  Matthieu Bopp

Inventor： Perceval Coudrain ,  Philippe Coronel ,  Michel Marty ,  Matthieu Bopp

IPC: H01L31/0232 ,  H01L27/14 ,  H01L31/00 ,  H01L31/06 ,  H01L27/15

CPC classification number: H01L27/14625 ,  H01L27/14645 ,  H01L27/14683 ,  H01L31/0232

Abstract: A semiconductor structure including a first active area under which is buried a first reflective layer and a least one second active area under which is buried a second reflective layer, wherein the upper surface of the second reflective layer is closer to the upper surface of the structure than the upper surface of the first reflective layer.

Abstract translation: 一种半导体结构，包括第一有源区，其下埋有第一反射层和至少一个第二有源区，在该第一有源区内掩埋有第二反射层，其中第二反射层的上表面更靠近该结构的上表面 比第一反射层的上表面。

公开(公告)号：US20090014764A1

公开(公告)日：2009-01-15

申请号：US12171213

申请日：2008-07-10

Applicant: Perceval COUDRAIN ,  Philippe CORONEL ,  Xavier BELREDON

Inventor： Perceval COUDRAIN ,  Philippe CORONEL ,  Xavier BELREDON

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14689

Abstract: An embodiment of an image sensor comprising photosensitive cells, each photosensitive cell comprising at least one charge storage means formed at least partly in a substrate of a semiconductor material. The substrate comprises, for at least one first photosensitive cell, a portion of a first silicon and germanium alloy having a first germanium concentration, possibly zero, and for at least one second photosensitive cell, a portion of a second silicon and germanium alloy having a second germanium concentration, non-zero, greater than the first germanium concentration.

Abstract translation: 包括感光单元的图像传感器的实施例，每个感光单元包括至少部分地形成在半导体材料的衬底中的至少一个电荷存储装置。 对于至少一个第一感光单元，衬底包括具有第一锗浓度的可能为零的第一硅和锗合金的一部分，并且对于至少一个第二光敏电池，第二硅和锗合金的一部分具有 第二锗浓度非零，大于​​第一锗浓度。