公开(公告)号：US5155565A

公开(公告)日：1992-10-13

申请号：US517447

申请日：1990-04-24

申请人： Robert P. Wenz ,  Nang T. Tran

发明人： Robert P. Wenz ,  Nang T. Tran

IPC分类号： H01L27/142 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/20

CPC分类号： H01L31/03921 ,  H01L27/142 ,  H01L31/022425 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A thin film p-i-n solar cell and Schottky barrier diode are fabricated adjacent one another on a common flexible polyimide substrate. A titanium nitride diffusion barrier prevents contaminants of an aluminum contact layer on the substrate from reacting with the semiconductor body of the solar cell and diode during subsequent fabrication. An n.sup.+ -type hydrogenated amorphous silicon layer overlies the layer of titanium nitride, and forms an ohmic contact with the solar cell and diode. The diode includes an n-type layer of silicon doped with phosphorus to a concentration of 10.sup.18 to 10.sup.20 atoms per cubic centimeter to increase its forward current density. The solar cell and diode are separated from one another by an epoxy strip. A top conducting oxide layer forms a Schottky barrier with the semiconductor body of the diode.

摘要翻译： 薄膜p-i-n太阳能电池和肖特基势垒二极管在普通柔性聚酰亚胺基板上彼此相邻地制造。 氮化钛扩散阻挡层防止在随后的制造期间，衬底上的铝接触层的污染物与太阳能电池和二极管的半导体本体反应。 n +型氢化非晶硅层覆盖氮化钛层，与太阳能电池和二极管形成欧姆接触。 二极管包括掺杂有磷的浓度为1018至1020原子/立方厘米的n型硅，以增加其正向电流密度。 太阳能电池和二极管通过环氧树脂条彼此分离。 顶部导电氧化物层与二极管的半导体本体形成肖特基势垒。

公开(公告)号：US10553450B2

公开(公告)日：2020-02-04

申请号：US14635729

申请日：2015-03-02

申请人： Kurt A. Schroder ,  Robert P. Wenz

发明人： Kurt A. Schroder ,  Robert P. Wenz

IPC分类号： H01L21/428 ,  B29C35/02 ,  H01L21/02 ,  H01L29/66 ,  H01L27/12 ,  B29C35/08

摘要： A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.

公开(公告)号：US20150311092A1

公开(公告)日：2015-10-29

申请号：US14635729

申请日：2015-03-02

申请人： KURT A. SCHRODER ,  ROBERT P. WENZ

发明人： KURT A. SCHRODER ,  ROBERT P. WENZ

IPC分类号： H01L21/428

CPC分类号： H01L21/428 ,  B29C35/0266 ,  B29C35/0272 ,  B29C35/0805 ,  B29C2035/0855 ,  B29C2035/0877 ,  H01L21/02422 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02686 ,  H01L21/02689 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/78603

摘要： A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.

摘要翻译： 公开了一种以选择性方式热处理最小吸收薄膜的方法。 两个紧密间隔的吸收迹线被图案化以与薄膜热接触。 使用脉冲辐射源来加热两个吸收迹线，并且通过两个吸收迹线之间的传导对薄膜进行热处理。 该方法可以用于制造其中薄膜是半导体的薄膜晶体管（TFT），并且吸收体是TFT的源极和漏极。

公开(公告)号：US06592234B2

公开(公告)日：2003-07-15

申请号：US09844744

申请日：2001-04-06

申请人： Kenneth A. Epstein ,  Robert P. Wenz ,  Gary T. Boyd ,  Stephan J. Pankratz

发明人： Kenneth A. Epstein ,  Robert P. Wenz ,  Gary T. Boyd ,  Stephan J. Pankratz

IPC分类号： F21V704

CPC分类号： G02B6/0038

摘要： An illuminated frontlit display includes a front light guide having at least one light input face that supplies light to the guide, a viewing face, and a light output face opposite the viewing face, the light output face having a light extraction layer thereon, the extraction layer having a substantially flat light exit face and containing buried reflective facets that extract supplied light from the guide through the light exit face to a reflective light valve and back through the viewing face of the guide to a viewer.

公开(公告)号：US4888061A

公开(公告)日：1989-12-19

申请号：US239513

申请日：1988-09-01

申请人： Robert P. Wenz

发明人： Robert P. Wenz

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/048

CPC分类号： H01L31/03921 ,  H01L31/048 ,  Y02E10/50 ,  Y10S438/938 ,  Y10T29/49146

摘要： An improved method for manufacturing solar cell tape including depositing a thin-film photovoltaic device on a flexible polymeric substrate, encapsulating the photovoltaic device with a layer of encapsulant, and applying a layer of adhesive to the substrate opposite the photovoltaic device. The improvement is characterized by selecting thickness of the substrate, layer of encapsulant and/or layer of adhesive as a function of their respective flexural moduli to locate a neutral plane of the electronic device near the photovoltaic device. Damaging stress on the photovoltaic device which may be caused when the electronic device is flexed can be reduced.

摘要翻译： 一种用于制造太阳能电池带（10）的改进方法，包括在柔性聚合物基底（3）上沉积薄膜光伏器件（5），用一层密封剂（1）封装光伏器件，并施加一层粘合剂 （4）到与光伏器件相对的衬底（3）。 改进的特征在于，选择基板（3）的厚度（t3，t1，t4），密封剂层（1）和/或粘合剂层（4）的厚度（它们各自的弯曲模量（E3，E1，E4 ）以将集成电路的中性平面定位在光伏器件（5）附近。 可以减小当集成电路（10）弯曲时可能导致的光伏器件（5）上的损坏应力。

公开(公告)号：US4882239A

公开(公告)日：1989-11-21

申请号：US165488

申请日：1988-03-08

申请人： Derrick P. Grimmer ,  Robert P. Wenz

发明人： Derrick P. Grimmer ,  Robert P. Wenz

IPC分类号： H01L31/04 ,  H01M2/02 ,  H01M10/46

CPC分类号： H01M10/465 ,  Y10S136/291

摘要： A light rechargeable battery includes a rechargeable cell having an elongated, tubular case characterized by a longitudinal axis, and a pair of terminals extending therefrom. Two or more thin-film solar cells fabricated on a flexible substrate and interconnected in a series circuit between the terminals are circumferentially positioned around the rechargeable cell on the exterior of the case. A blocking diode is connected in the series circuit with the solar cells. The solar cells are coupled to the terminals by bus bars. A transparent shrink wrap cover secures the solar cells to the case of the rechargeable cell.