摘要:
A radiation detection device includes a plurality of pixels, each pixel includes a thin film transistor and a photodiode conductively connected to a gate of the thin film transistor with the photodiode generating a current when the pixel is exposed to x-rays.
摘要:
A radiation detector containing: (a) a fiber optic network; (b) an array of pixelized phosphors on the X-ray incidence side of the fiber optic network; and (c) an array of pixelized sensors optically coupled to the other side of the fiber optic network, wherein: (i) the ratio of the surface area of a phosphor pixel to the surface area of a sensor pixel is in the range of about 1:1 to 1:64, and (ii) the ratio of the surface area of the core of each individual optical fiber of the fiber optic network to the surface area of a phosphor pixel is in the range of about 1:4 to 1:160.
摘要:
In one embodiment, the invention is directed toward inline lapping of magnetic tape. The lapping process is performed inline with one or more other magnetic tape manufacturing processes. In this manner, the number of times the magnetic tape is un-spooled and then re-spooled can be reduced. Consequently, the amount of handling of the individual tape pancakes can also be reduced, thus avoiding damage to the edge of the tape, or other damage associated with tape pancake handling.
摘要:
Pixel array including a high resolution mode and a low resolution mode and method of reading out the pixel array in a high and low resolution mode. The pixel array includes a first signal line and a second signal line. An array of pixel elements are provided, each pixel element coupled to the first signal line or the second signal line. A switch mechanism is provided for coupling the first signal line to the second signal line. A mechanism is also provided for conveying a charge associated with each pixel element to the first signal line or the second signal line. A mechanism may also be provided for buffering signals between the first signal line, the second signal line, and an output signal line.
摘要:
A solid state radiation detection panel adapted to receive radiation, having a plurality of modules positioned immediately adjacent each other, with each of the plurality of modules having an array of photosensitive detectors arranged in a plurality of rows and columns, each of the photosensitive detectors having a radiation sensitive area; and circuit means for selectively addressing one of the photosensitive detectors by addressing one of the plurality of rows and one of the plurality of columns and reading the output of the one of the array of photosensitive detectors where each of the plurality of modules being arranged in a three dimensional structure in which the array of photosensitive detectors is arranged on a planar first surface of the module covering substantially the entire area of the planar first surface. The circuit means is located within the module in an area away from the planar first surface opposite from the received radiation. Photosensitive detectors located along an edge of the module having non-radiation sensitive circuitry located opposite the edge from the radiation sensitive area. The radiation sensitive area of the edge photosensitive detectors are smaller than the radiation sensitive area of the inside photosensitive detectors and the center to center distance of the radiation sensitive area of adjacent photosensitive detectors is maintained substantially constant between adjacent edge photosensitive detectors as adjacent inside photosensitive detectors. The module further has a pin diode along the edge of the module.
摘要:
A process for producing a polysilicon thin film transistor includes hydrogenating the thin film transistor and depositing an atomic hydrogen-containing layer on the thin film transistor. The thin film transistor is characterized by leakage current rates as low as 10.sup.-13 A.
摘要:
A process for producing an array of solid state radiation detectors includes depositing on a substrate one or more layers of silicon-based materials and then depositing a metal layer overlying silicon-based substance. The metal layer is formed into an array of metal layer regions, and then the metal layer is used as a mask to remove exposed adjacent silicon-based substance layers thereby forming an array of silicon-based substance layers that are aligned with the array of metal layers for forming an array of photosensitive sensing devices. The process of the present invention reduces the number of microlithography steps that are used in forming an array of layered amorphous silicon photosensitive devices.
摘要:
A solid state radiation detection panel to receive radiation, having a plurality of modules positioned immediately adjacent each other, with each of the plurality of modules having an array of photosensitive detectors arranged in a plurality of rows and columns, each of the photosensitive detectors having a radiation sensitive area; and circuit for selectively addressing one of the photosensitive detectors by addressing one of the plurality of rows and one of the plurality of columns and reading the output of the one of the array of photosensitive detectors where each of the plurality of modules being arranged in a three dimensional structure in which the array of photosensitive detectors is arranged on a planar first surface of the module covering substantially the entire area of the planar first surface. The circuit is located within the module in an area away from the planar first surface opposite from the received radiation. Photosensitive detectors located along an edge of the module having non-radiation sensitive circuitry located opposite the edge from the radiation sensitive area. The radiation sensitive area of the edge photosensitive detectors are smaller than the radiation sensitive area of the inside photosensitive detectors and the center to center distance of the radiation sensitive area of adjacent photosensitive detectors is maintained substantially constant between adjacent edge photosensitive detectors as adjacent inside photosensitive detectors. The module further has a p/n diode along the edge of the module.
摘要:
A pixelized phosphor screen having an array of pixelized phosphors on a support which are separated a width of from greater than 0.0 to 5.0 microns. In order to produce the phosphor screen, phosphor is deposited on a support and then exposed to radiation to create an array of pixelized phosphors separated by slots. The resulting slots between the pixelized phosphors are then filled in with additional phosphor material such that the width between the pixelized phosphors is from greater than 0.0 to 5.0 microns.
摘要:
A process for fabricating a pixelized phosphor having a space between the pixels in the range of about 0.5-25 microns, the process comprising the steps of:(a) depositing a phosphor on a support;(b) exposing the deposited phosphor to a source of electromagnetic radiation through a mask thereby ablating the phosphor segmentally, resulting in a series of structures in both said X and Y directions to produce an array of pixelized phosphors separated by slots;(c) filling the resulting slots between the pixelized phosphors with phosphor material of the same or different composition as utilized in step (a) such that each of the pixelized phosphors on the support are separated by a width of from about 0.5-25 microns; and(d) optionally, planarizing the pixelized phosphors.