公开(公告)号：US07564885B2

公开(公告)日：2009-07-21

申请号：US11528002

申请日：2006-09-27

Applicant: Marzia Rosso ,  Simone Codato ,  Rui Yu Fang ,  Guido Alberto Roggero

Inventor： Marzia Rosso ,  Simone Codato ,  Rui Yu Fang ,  Guido Alberto Roggero

IPC: H01S5/00

CPC classification number: H01S5/0265 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/2272

Abstract: In an arrangement comprised of an electro-absorption modulator integrated with a laser source, the electro-absorption modulator includes a respective metal contact pad, wherein the metal pad is positioned over a localised semi-insulating layer island, such as a Fe—InP island.

Abstract translation: 在由与激光源集成的电吸收调制器构成的布置中，电吸收调制器包括相应的金属接触焊盘，其中金属焊盘位于局部半绝缘层岛上，例如Fe-InP岛 。

公开(公告)号：US08315287B1

公开(公告)日：2012-11-20

申请号：US13099429

申请日：2011-05-03

Applicant: Guido Alberto Roggero ,  Rui Yu Fang ,  Luigi Tallone

Inventor： Guido Alberto Roggero ,  Rui Yu Fang ,  Luigi Tallone

IPC: H01S5/00

CPC classification number: G02B6/12004 ,  H01S5/026 ,  H01S5/0267 ,  H01S5/0425 ,  H01S5/162 ,  H01S5/18 ,  H01S2301/176

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability.

Abstract translation: 提供一种表面发射半导体激光器件，其包括集成在具有各种反射器的半导体材料中的边缘发射激光器和衍射透镜。 边缘发射激光器具有包括有源MQW区域的第一部分，包括无源区域的第二部分和包括半绝缘或未掺杂半导体体层的第三部分。 该配置确保了注入电流将通过有源区域的所有层，从而防止由于MQW有源区域的未注入区域引起的光学损耗的发生。 此外，包括无源区域确保没有电流通过有源MQW区域和再生长半导体体层之间的界面。 后者的功能提高了性能和设备的可靠性。

公开(公告)号：US20120183007A1

公开(公告)日：2012-07-19

申请号：US13008239

申请日：2011-01-18

Applicant: Guido Alberto Roggero ,  Rui Yu Fang ,  Alessandro Stano ,  Giuliana Morello

Inventor： Guido Alberto Roggero ,  Rui Yu Fang ,  Alessandro Stano ,  Giuliana Morello

IPC: H01S5/18 ,  H01L21/28

CPC classification number: H01S5/18 ,  H01S5/026 ,  H01S5/141

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed in or on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.

Abstract translation: 提供一种表面发射半导体激光器件，其包括形成在设置在半导体衬底上的各种半导体材料中的边缘发射激光器，设置在基板上的与形成边缘发射激光器的层横向相邻的聚合物材料， 形成在聚合物材料的上表面中或上面的衍射或折射透镜，形成在聚合物材料的倾斜的侧面反射器面上的侧反射器，该聚合物材料大致面对激光器的出射端面，以及下反射器， 聚合物材料。 激光从出射端小面出射，并在被侧反射器反射向下反射器反射之前传播通过聚合物材料。 然后，激光被下反射器重新反射到透镜，其将激光沿着基本上垂直于衬底的上表面的方向引导出设备。