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1.发明申请SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE IN WHICH AN EDGE-EMITTING LASER IS INTEGRATED WITH A DIFFRACTIVE LENS, AND A METHOD FOR MAKING THE DEVICE 有权发射激光器的发射半导体激光器件与衍射透镜一体化，以及用于制造器件的方法公开(公告)号：US20120281727A1
公开(公告)日：2012-11-08
申请号：US13099429
申请日：2011-05-03
CPC分类号： G02B6/12004 , H01S5/026 , H01S5/0267 , H01S5/0425 , H01S5/162 , H01S5/18 , H01S2301/176
摘要： A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability.
摘要翻译： 提供一种表面发射半导体激光器件，其包括集成在具有各种反射器的半导体材料中的边缘发射激光器和衍射透镜。 边缘发射激光器具有包括有源MQW区域的第一部分，包括无源区域的第二部分和包括半绝缘或未掺杂半导体体层的第三部分。 该配置确保了注入电流将通过有源区域的所有层，从而防止由于MQW有源区域的未注入区域引起的光学损耗的发生。 此外，包括无源区域确保没有电流通过有源MQW区域和再生长半导体体层之间的界面。 后者的功能提高了性能和设备的可靠性。
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2.发明授权公开(公告)号：US08315287B1
公开(公告)日：2012-11-20
申请号：US13099429
申请日：2011-05-03
IPC分类号： H01S5/00
CPC分类号： G02B6/12004 , H01S5/026 , H01S5/0267 , H01S5/0425 , H01S5/162 , H01S5/18 , H01S2301/176
摘要： A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability.
摘要翻译： 提供一种表面发射半导体激光器件，其包括集成在具有各种反射器的半导体材料中的边缘发射激光器和衍射透镜。 边缘发射激光器具有包括有源MQW区域的第一部分，包括无源区域的第二部分和包括半绝缘或未掺杂半导体体层的第三部分。 该配置确保了注入电流将通过有源区域的所有层，从而防止由于MQW有源区域的未注入区域引起的光学损耗的发生。 此外，包括无源区域确保没有电流通过有源MQW区域和再生长半导体体层之间的界面。 后者的功能提高了性能和设备的可靠性。
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3.发明申请ELECTRO-ABSORPTION MODULATED LASER (EML) ASSEMBLY HAVING A 1/4 WAVELENGTH PHASE SHIFT LOCATED IN THE FORWARD PORTION OF THE DISTRIBUTED FEEDBACK (DFB) OF THE EML ASSEMBLY, AND A METHOD 审中-公开具有位于EML组件的分布式反馈（DFB）的前向部分中的1/4波长相位移动的电吸收式调制激光器（EML）组件，以及方法公开(公告)号：US20100290489A1
公开(公告)日：2010-11-18
申请号：US12466439
申请日：2009-05-15
CPC分类号： H01S5/12 , H01S5/0265 , H01S5/028 , H01S5/0425 , H01S5/06226 , H01S5/0654 , H01S5/1085 , H01S5/124
摘要： An EML assembly is provided that has and EAM and a DFB, with the DFB having an asymmetric ¼ wavelength phase shift positioned at a location that is in front of the center of the periodic structure of the DFB. In addition, the EML assembly has a tilted or bent waveguide that reduces reflections occurring at the front end facet, thereby enabling the EAM to produce a relatively high POUT level while also achieving reduced chirp and high single-mode yield in the DFB. By providing the EML assembly with a tilted or bent waveguide, the reflections at the front end facet are reduced without having to use an AR coating on the front end facet that has an extremely low reflectivity. By avoiding the need to use an AR coating on the front end facet that has an extremely low reflectivity, the AR coating that is used on the front end facet can be made using standard sputter deposition techniques to enable higher manufacturing yields to be achieved.
摘要翻译： 提供了一种EML组件，其具有EAM和DFB，其中DFB具有位于DFB的周期性结构的中心前方的位置处的不对称的1/4波长相移。 此外，EML组件具有倾斜或弯曲的波导，其减小在前端小面处发生的反射，从而使得EAM能够产生相对较高的POUT电平，同时还实现DFB中的啁啾和高单模产量的降低。 通过为EML组件提供倾斜或弯曲的波导，前端小面处的反射减小，而不必在具有极低反射率的前端小面上使用AR涂层。 通过避免在具有极低反射率的前端小面上使用AR涂层的需要，可以使用标准溅射沉积技术制造用于前端小面的AR涂层，以实现更高的制造成品率。
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公开(公告)号：US07450621B1
公开(公告)日：2008-11-11
申请号：US11768235
申请日：2007-06-26
IPC分类号： H01S5/00
CPC分类号： H01S5/0267 , H01S5/0071 , H01S5/0207 , H01S5/026
摘要： A semiconductor laser device includes an edge-emitting laser monolithically integrated with a diffractive lens formed on the chip surface to emit a focalized or collimated beam in a direction perpendicular to the surface. An upper reflective surface and an angled reflective surface are formed in the chip upper surface. A lower reflective surface is formed in the chip lower surface. The laser, angled reflective surface, upper reflective surface, lower reflective surface and diffractive lens are oriented in relation to one another so that a first portion of the light emitted by the laser impinges directly upon the upper reflective surface, which reflects it onto the angled reflective surface, while a second portion of the light emitted by the laser impinges directly upon the angled reflective surface. The angled reflective surface reflects the light portions onto the lower reflective surface, which in turn reflects them through the diffractive lens.
摘要翻译： 半导体激光器件包括与形成在芯片表面上的衍射透镜单片集成的边缘发射激光器，以在垂直于该表面的方向上发射聚焦或准直光束。 在芯片上表面形成上反射面和倾斜反射面。 在芯片下表面形成下反射面。 激光器，有角度的反射表面，上反射表面，下反射表面和衍射透镜彼此相对定向，使得由激光器发射的光的第一部分直接照射在上反射表面上，将其反射到成角度 而激光发射的第二部分直接照射在倾斜的反射表面上。 倾斜的反射表面将光部分反射到下反射表面上，反射表面又反射穿过衍射透镜。
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公开(公告)号：US07564885B2
公开(公告)日：2009-07-21
申请号：US11528002
申请日：2006-09-27
IPC分类号： H01S5/00
CPC分类号： H01S5/0265 , H01S5/042 , H01S5/0425 , H01S5/12 , H01S5/2077 , H01S5/22 , H01S5/2224 , H01S5/2272
摘要： In an arrangement comprised of an electro-absorption modulator integrated with a laser source, the electro-absorption modulator includes a respective metal contact pad, wherein the metal pad is positioned over a localised semi-insulating layer island, such as a Fe—InP island.
摘要翻译： 在由与激光源集成的电吸收调制器构成的布置中，电吸收调制器包括相应的金属接触焊盘，其中金属焊盘位于局部半绝缘层岛上，例如Fe-InP岛 。
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6.发明授权Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device 有权表面发射半导体激光器件，其中边缘发射激光器与半导体激光器件上的衍射或折射透镜集成公开(公告)号：US08582618B2
公开(公告)日：2013-11-12
申请号：US13008239
申请日：2011-01-18
IPC分类号： H01S5/026
摘要： A surface-emitting semiconductor laser device that includes an edge-emitting laser formed in layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.
摘要翻译： 一种表面发射半导体激光器件，其包括形成在半导体衬底上的半导体材料层的边缘发射激光器，设置在衬底上的聚合物材料，其横向邻近形成边缘发射激光器的层，衍射或 折射透镜形成在聚合物材料的上表面上，侧反射器形成在聚合物材料的倾斜的侧面反射器小面上，大体上面对激光器的出射端面，以及下反射器，设置在聚合物材料下方的基底上。 激光从出射端小面出射，并在被侧反射器反射向下反射器反射之前传播通过聚合物材料。 然后，激光被下反射器重新反射到透镜，其将激光沿着基本上垂直于衬底的上表面的方向引导出设备。
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7.发明申请SEMICONDUCTOR LASER DEVICE IN WHICH AN EDGE-EMITTING LASER IS INTEGRATED WITH A REFLECTOR TO FORM A SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE 审中-公开发射激光器的半导体激光器件与反射器集成形成表面发射半导体激光器件公开(公告)号：US20120195336A1
公开(公告)日：2012-08-02
申请号：US13018581
申请日：2011-02-01
摘要： A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, and a reflector formed in or on an angled side facet of the polymer material generally facing an exit end facet of the laser. Laser light passes out of the exit end facet propagates through the polymer material before being reflected by the reflector out of the device in a direction that is generally normal to the upper surface of the substrate.
摘要翻译： 提供一种表面发射半导体激光器件，其包括形成在设置在半导体衬底上的各种半导体材料中的边缘发射激光器，设置在基板上的与形成边缘发射激光器的层横向相邻的聚合物材料， 以及形成在聚合物材料的倾斜的侧面中或其上的反射器，该反射器大致面对激光器的出射端面。 从出口端小面出射的激光通过聚合物材料传播，然后被反射器反射出装置的方向通常垂直于基板的上表面。
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8.发明申请SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE IN WHICH AN EDGE-EMITTING LASER IS INTEGRATED WITH A DIFFRACTIVE OR REFRACTIVE LENS ON THE SEMICONDUCTOR LASER DEVICE 有权发射激光器的发射半导体激光器件，其边缘发射激光与半导体激光器件上的衍射或折射透镜集成公开(公告)号：US20120183007A1
公开(公告)日：2012-07-19
申请号：US13008239
申请日：2011-01-18
摘要： A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed in or on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.
摘要翻译： 提供一种表面发射半导体激光器件，其包括形成在设置在半导体衬底上的各种半导体材料中的边缘发射激光器，设置在基板上的与形成边缘发射激光器的层横向相邻的聚合物材料， 形成在聚合物材料的上表面中或上面的衍射或折射透镜，形成在聚合物材料的倾斜的侧面反射器面上的侧反射器，该聚合物材料大致面对激光器的出射端面，以及下反射器， 聚合物材料。 激光从出射端小面出射，并在被侧反射器反射向下反射器反射之前传播通过聚合物材料。 然后，激光被下反射器重新反射到透镜，其将激光沿着基本上垂直于衬底的上表面的方向引导出设备。
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9.发明申请INTEGRATED PHOTONIC SEMICONDUCTOR DEVICES HAVING RIDGE STRUCTURES THAT ARE GROWN RATHER THAN ETCHED, AND METHODS FOR MAKING SAME 有权一体化的光电半导体器件，具有被烧蚀的RIDGE结构及其制造方法公开(公告)号：US20090003396A1
公开(公告)日：2009-01-01
申请号：US11768214
申请日：2007-06-26
申请人： Simone Codato , Fang Ruiyu , Rigo Cesare , Guido Alberto Roggero , Marzia Rosso
发明人： Simone Codato , Fang Ruiyu , Rigo Cesare , Guido Alberto Roggero , Marzia Rosso
CPC分类号： H01S5/0265 , H01L33/0062 , H01L33/20 , H01S5/0425 , H01S5/101 , H01S5/1085 , H01S5/12 , H01S5/2077 , H01S5/22 , H01S5/2272
摘要： A SAG technique is used to grow the ridge structure in a photonic semiconductor device, such as an electroabsorption modulator integrated with a distributed feedback laser (EML) assembly. The adoption of this SAG technique to grow the ridge structure results in the formation of a self-assembled and self-aligned ridge structure that has a very precise configuration. The use of this process enables straight, bent and tilted ridge structures to be formed with high precision. In addition, because the ridge structure is self-assembled and self-aligned, a lesser number of processing steps are required to create the photonic device in comparison to the known approach that uses wet chemical etching techniques to form the ridge structure. The high precision of the ridge structure and the lesser number of processing steps needed to create the device increase manufacturing yield and allow overall cost of the device to be reduced.
摘要翻译： 使用SAG技术来生长光子半导体器件中的脊结构，例如与分布反馈激光器（EML）组件集成的电吸收调制器。 采用这种SAG技术来生长脊结构导致形成具有非常精确构造的自组装和自对准的脊结构。 使用该方法能够以高精度形成直的，弯曲的和倾斜的脊状结构。 此外，由于脊结构是自组装和自对准的，所以与使用湿化学蚀刻技术形成脊结构的已知方法相比，需要较少数量的处理步骤来创建光子器件。 脊结构的高精度和创建装置所需的较少数量的加工步骤增加了制造产量并且允许减少装置的整体成本。
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10.发明授权Integrated photonic semiconductor devices having ridge structures that are grown rather than etched, and methods for making same 有权具有生长而不是蚀刻的脊结构的集成光子半导体器件及其制造方法公开(公告)号：US07539228B2
公开(公告)日：2009-05-26
申请号：US11768214
申请日：2007-06-26
申请人： Simone Codato , Fang Ruiyu , Rigo Cesare , Guido Alberto Roggero , Marzia Rosso
发明人： Simone Codato , Fang Ruiyu , Rigo Cesare , Guido Alberto Roggero , Marzia Rosso
IPC分类号： H01S5/00
CPC分类号： H01S5/0265 , H01L33/0062 , H01L33/20 , H01S5/0425 , H01S5/101 , H01S5/1085 , H01S5/12 , H01S5/2077 , H01S5/22 , H01S5/2272
摘要： A SAG technique is used to grow the ridge structure in a photonic semiconductor device, such as an electroabsorption modulator integrated with a distributed feedback laser (EML) assembly. The adoption of this SAG technique to grow the ridge structure results in the formation of a self-assembled and self-aligned ridge structure that has a very precise configuration. The use of this process enables straight, bent and tilted ridge structures to be formed with high precision. In addition, because the ridge structure is self-assembled and self-aligned, a lesser number of processing steps are required to create the photonic device in comparison to the known approach that uses wet chemical etching techniques to form the ridge structure. The high precision of the ridge structure and the lesser number of processing steps needed to create the device increase manufacturing yield and allow overall cost of the device to be reduced.
摘要翻译： 使用SAG技术来生长光子半导体器件中的脊结构，例如与分布反馈激光器（EML）组件集成的电吸收调制器。 采用这种SAG技术来生长脊结构导致形成具有非常精确构造的自组装和自对准的脊结构。 使用该方法能够以高精度形成直的，弯曲的和倾斜的脊状结构。 此外，由于脊结构是自组装和自对准的，所以与使用湿化学蚀刻技术形成脊结构的已知方法相比，需要较少数量的处理步骤来创建光子器件。 脊结构的高精度和创建装置所需的较少数量的加工步骤增加了制造产量并且允许减少装置的整体成本。
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