公开(公告)号：US20110207265A1

公开(公告)日：2011-08-25

申请号：US13064960

申请日：2011-04-28

Applicant: Yong-wook Kwon ,  Chul-soon Kwon ,  Young-cheon Jeong

Inventor： Yong-wook Kwon ,  Chul-soon Kwon ,  Young-cheon Jeong

IPC: H01L21/50

CPC classification number: H01L27/24 ,  G11C13/0004 ,  G11C2213/79

Abstract: Example embodiments provide a nonvolatile memory device using resistive elements. The nonvolatile memory device may include a semiconductor substrate, a plurality of variable resistance patterns on the semiconductor substrate, and a plurality of heat sink patterns that are level with the variable resistance patterns and coupled to a ground voltage.

公开(公告)号：US07956343B2

公开(公告)日：2011-06-07

申请号：US12010921

申请日：2008-01-31

Applicant: Yong-wook Kwon ,  Chul-soon Kwon ,  Young-cheon Jeong

Inventor： Yong-wook Kwon ,  Chul-soon Kwon ,  Young-cheon Jeong

IPC: H01L47/00

CPC classification number: H01L27/24 ,  G11C13/0004 ,  G11C2213/79

Abstract: Example embodiments provide a nonvolatile memory device using resistive elements. The nonvolatile memory device may include a semiconductor substrate, a plurality of variable resistance patterns on the semiconductor substrate, and a plurality of heat sink patterns that are level with the variable resistance patterns and coupled to a ground voltage.

Abstract translation: 示例性实施例提供了使用电阻元件的非易失性存储器件。 非易失性存储器件可以包括半导体衬底，半导体衬底上的多个可变电阻图案以及与可变电阻图案相平行并耦合到接地电压的多个散热器图案。

公开(公告)号：US07923287B2

公开(公告)日：2011-04-12

申请号：US12001031

申请日：2007-12-06

Applicant: Eun-Guk Lee ,  Do-Hyun Kim ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Soon-Kwon Lim

Inventor： Eun-Guk Lee ,  Do-Hyun Kim ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Soon-Kwon Lim

IPC: H01L21/84 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/7869

Abstract: A thin film transistor substrate and a method of manufacturing the same are disclosed. The method of manufacturing a thin film transistor substrate includes forming a first conductive pattern group including a gate line, a gate electrode, and a lower gate pad electrode on a substrate, forming a gate insulating layer on the substrate on which the first conductive pattern group is formed, forming an oxide semiconductor pattern overlapping the gate electrode on the gate insulating layer, and forming first and second conductive layers on the substrate on which the oxide semiconductor pattern is formed and patterning the first and second conductive layers to form a second conductive pattern group including a data line, a source electrode, a drain electrode, and a data pad.

Abstract translation: 公开了一种薄膜晶体管基板及其制造方法。 制造薄膜晶体管基板的方法包括在基板上形成包括栅极线，栅电极和下栅极焊盘电极的第一导电图案组，在基板上形成栅极绝缘层，第一导电图案组 形成，在所述栅极绝缘层上形成与所述栅电极重叠的氧化物半导体图案，以及在其上形成有所述氧化物半导体图案的所述基板上形成第一和第二导电层，并且对所述第一导电层和所述第二导电层进行构图以形成第二导电图案 包括数据线，源电极，漏电极和数据焊盘。

公开(公告)号：US07920666B2

公开(公告)日：2011-04-05

申请号：US12128009

申请日：2008-05-28

Applicant: Tae-Soon Kwon ,  In-Chul Chu ,  Chul-Hwa Song ,  Won-Pil Baek

Inventor： Tae-Soon Kwon ,  In-Chul Chu ,  Chul-Hwa Song ,  Won-Pil Baek

IPC: G21C9/00

CPC classification number: G21C15/18 ,  Y02E30/32

Abstract: A safety injection tank, used for quickly injecting emergency core cooling water (ECCW) to a reactor vessel in the case of a cold leg large break accident (CLLBA) in a pressurized water reactor (PWR), is disclosed. The safety injection tank has a gravity-driven fluidic device configured to efficiently change the ECCW injection mode from a high flow injection mode to a low flow injection mode. The gravity-driven fluidic device includes a spring placed in the upper end of the vertical pipe, and a vertically movable water tub placed on the spring so as to be movable in a vertical direction. When ECCW contained in the pressure vessel is discharged and the water level is reduced lower than the height of the tub, the tub is moved downwards such that the lower surface thereof comes into contact with the vertical pipe and closes the high flow inlet port.

Abstract translation: 公开了一种安全注射罐，用于在压力水反应堆（PWR）中发生冷腿大断裂事故（CLLBA）的情况下将反应堆快速注入应急核心冷却水（ECCW）。 安全注射罐具有重力驱动的流体装置，其配置为有效地将ECCW注射模式从高流动注射模式改变为低流动注射模式。 重力驱动的流体装置包括放置在垂直管的上端的弹簧和放置在弹簧上的可垂直移动的水桶，以便能够在垂直方向上移动。 当包含在压力容器中的ECCW被排放并且水位降低到低于桶的高度时，桶被向下移动，使得其下表面与竖直管接触并关闭高流入口。

公开(公告)号：US20100278294A1

公开(公告)日：2010-11-04

申请号：US12499824

申请日：2009-07-09

Applicant: Tae-Soon KWON ,  Dong Jin EUH ,  In-Cheol CHU ,  Seok CHO ,  Nam Hyun CHOI ,  Chui-Hwa SONG ,  Won Pil BAEK ,  Jun-Hwa HONG

Inventor： Tae-Soon KWON ,  Dong Jin EUH ,  In-Cheol CHU ,  Seok CHO ,  Nam Hyun CHOI ,  Chui-Hwa SONG ,  Won Pil BAEK ,  Jun-Hwa HONG

IPC: G21C9/00

CPC classification number: G21C15/18 ,  G21C1/086 ,  G21C13/02 ,  Y02E30/40

Abstract: The present invention relates to a longitudinally divided emergency core cooling (ECC) duct in order to efficiently inject safety water to core of a pressurized light-water nuclear reactor. The ECC duct includes side supports for preventing the flow-induced vibration in the annular downcomer, and has structural stability while thermally expanding and contracting. A longitudinally divided ECC duct for emergency core cooling water injection of a nuclear reactor is provided on the periphery of a core barrel of a nuclear reactor, includes an emergency core cooling water inlet facing a direct vessel injection nozzle, and extends in a longitudinal direction of the core barrel. The longitudinally divided ECC duct is divided into a plurality of longitudinally-divided ducts in the longitudinal direction of the longitudinally divided ECC duct.

Abstract translation: 本发明涉及一种纵向分配的应急芯冷却（ECC）管道，以便有效地将安全水注入加压轻水核反应堆的核心。 ECC管道包括用于防止环形降液管中的流动振动的侧支撑件，并且在热膨胀和收缩时具有结构稳定性。 在核反应堆的核心筒的周边设置有用于核反应堆的应急芯冷却水注入的纵向分割的ECC管道，包括面向直接容器注入喷嘴的应急芯冷却水入口，并且沿纵向方向延伸 核心桶。 纵向分割的ECC管道沿纵向分割的ECC管道的纵向被分成多个纵向分配的管道。

公开(公告)号：US07809099B2

公开(公告)日：2010-10-05

申请号：US10985862

申请日：2004-11-10

Applicant: Tae-Soon Kwon ,  Chul-Hwa Song

Inventor： Tae-Soon Kwon ,  Chul-Hwa Song

IPC: G21C15/18

CPC classification number: G21C15/18 ,  G21C19/28 ,  Y02E30/40

Abstract: A direct vessel injection (DVI) nozzle for minimum emergency core coolant (ECC) bypass is disclosed. The DVI nozzle is used in a pressurized light water reactor (PLWR) having a reactor vessel with a reactor coolant system in which a coolant flows into the reactor vessel through a cold leg and passes through a reactor core prior to being discharged to the outside of the reactor vessel through a hot leg. The DVI nozzle, provided to directly inject ECC into the reactor vessel to cool the reactor core during a break in the reactor coolant system, such as a cold leg break (CLB) that may occur in the PLWR, is placed on the reactor vessel at a position horizontally offset from the central axis of the hot leg at an angle of 10° to 30° and is involved within a region defined above the central axis of the hot leg by a distance of 1.5 times the sum of diameters of the hot leg and the DVI nozzle. Thus, the DVI nozzle efficiently injects ECC, and remarkably reduces the direct ECC bypass fraction to a broken cold leg and minimizes the amount of direct ECC bypass.

Abstract translation: 公开了用于最小应急芯冷却剂（ECC）旁路的直接容器注入（DVI）喷嘴。 DVI喷嘴用于具有反应堆容器的加压轻水反应堆（PLWR），反应堆容器具有反应堆冷却剂系统，其中冷却剂通过冷腿流入反应堆容器，并在排放到外部之前通过反应堆堆芯 反应堆容器通过热腿。 在反应堆冷却剂系统断裂期间（例如可能发生在PLWR中的冷腿断裂（CLB））的DVI喷嘴被提供以将ECC直接注入到反应器容器中以冷却反应堆堆芯在反应器容器中 以10°至30°的角度从热腿的中心轴线水平偏移的位置，并且包括在热腿的中心轴线上方的距离为热腿直径的1.5倍的区域内 和DVI喷嘴。 因此，DVI喷嘴有效地注入ECC，并且显着地将直接的ECC旁路部分减少到破碎的冷腿，并使直接ECC旁路的量最小化。

公开(公告)号：US07795831B2

公开(公告)日：2010-09-14

申请号：US11875443

申请日：2007-10-19

Applicant: Mun-Soon Kwon ,  Hwa-sik Shim ,  Ju-ho Ahn ,  Jae-hyun Kim

Inventor： Mun-Soon Kwon ,  Hwa-sik Shim ,  Ju-ho Ahn ,  Jae-hyun Kim

IPC: H02P5/00 ,  H02P7/00 ,  H02P1/04

CPC classification number: B60S1/08

Abstract: Provided is a wiper control device. The device includes a first output IC, a direct driving switch, a second output IC, and an MCU. The first output IC supplies a power source for a wiper operation control in IG2 OFF state. The direct driving switch directly drives wipers. The second output IC intermits the power source to a wiper motor. The MCU controls the second output IC to drive the wipers depending on the direct driving switch.

Abstract translation: 提供了一种刮水器控制装置。 该器件包括第一输出IC，直接驱动开关，第二输出IC和MCU。 第一个输出IC为IG2 OFF状态下的雨刷操作控制提供电源。 直接驱动开关直接驱动雨刷。 第二输出IC将电源中断到刮水器马达。 MCU根据直接驱动开关控制第二个输出IC驱动刮水器。

公开(公告)号：US20090232267A1

公开(公告)日：2009-09-17

申请号：US12123566

申请日：2008-05-20

Applicant: Tae-Soon Kwon ,  Chul-Hwa Song ,  Won-Pil Baek

Inventor： Tae-Soon Kwon ,  Chul-Hwa Song ,  Won-Pil Baek

IPC: G21C9/00

CPC classification number: G21C15/18 ,  G21C15/182 ,  G21Y2002/201 ,  G21Y2002/207 ,  G21Y2002/302 ,  G21Y2002/50 ,  G21Y2004/302 ,  Y02E30/40

Abstract: An emergency core cooling system directly injects emergency core cooling water, which is supplied from a high-pressure safety injection pump or a safety injection tank for a pressurized light water reactor, into a reactor vessel downcomer. A pipe connector is completely removed from between each direct vessel injection nozzle and each injection extension duct installed on an outer surface of the core barrel, which are opposite to each other. An emergency core cooling water intake port, through which the water is injected from each direct vessel injection nozzle, is formed on the surface of each injection extension duct facing an axis of each direct vessel injection nozzle. Thereby, a structure in which a jet of the emergency core cooling water flows into the injection extension ducts is adopted in a hydraulic connection fashion.

Abstract translation: 应急核心冷却系统直接将应急核心冷却水从高压安全注射泵或加压轻水反应堆的安全注射罐供应到反应堆容器降液管中。 每个直接容器注入喷嘴和安装在芯筒的外表面上的彼此相对的每个注射延伸管之间的管连接器被完全移除。 在每个注射延伸管道的面对每个直接容器注射喷嘴的轴线的表面上形成有从每个直接容器注射喷嘴喷射水的应急芯冷却水进入口。 因此，以液压连接方式采用应急芯冷却水的射流流入喷射延伸管道的结构。

公开(公告)号：US07553726B2

公开(公告)日：2009-06-30

申请号：US11505355

申请日：2006-08-17

Applicant: In-gu Yoon ,  Chul-soon Kwon ,  Jae-won Um ,  Jung-ho Moon

Inventor： In-gu Yoon ,  Chul-soon Kwon ,  Jae-won Um ,  Jung-ho Moon

IPC: H01L21/336 ,  H01L21/8238

CPC classification number: H01L27/115 ,  H01L27/11521

Abstract: A method of fabricating nonvolatile memory devices may involve forming separate floating gates on a semiconductor substrate, forming control gates on the semiconductor substrate, conformally forming a buffer film on a surface of the semiconductor substrate, injecting ions into the semiconductor substrate between the pairs of the floating gates to form a common source region partially overlapping each floating gate of the respective pair of the floating gates, depositing an insulating film on the buffer film, etching the buffer film and the insulating film at side walls of the floating gates and the control gates to form spacers at the side walls of the floating gates and the control gates, and forming a drain region in the semiconductor substrate at a side of the control gate other than a side of the control gate where the common source region is formed.

Abstract translation: 制造非易失性存储器件的方法可以包括在半导体衬底上形成分离的浮置栅极，在半导体衬底上形成控制栅极，在半导体衬底的表面上保形地形成缓冲膜，将离子注入半导体衬底 浮置栅极，形成与各对浮置栅极的每个浮置栅极部分重叠的共同源极区域，在缓冲膜上沉积绝缘膜，在浮置栅极和控制栅极的侧壁处蚀刻缓冲膜和绝缘膜 在浮置栅极和控制栅极的侧壁处形成间隔物，并且在除了形成公共源极区域的控制栅极的一侧之外的控制栅极的一侧的半导体衬底中形成漏极区域。

公开(公告)号：US20080241414A1

公开(公告)日：2008-10-02

申请号：US12018892

申请日：2008-01-24

Applicant: Jang Sub Kim ,  Soon-Kwon Lim ,  Joo-Ho Moon ,  Sun-Ho Jeong ,  Dong-Jo Kim ,  Kyoo-Hee Woo

Inventor： Jang Sub Kim ,  Soon-Kwon Lim ,  Joo-Ho Moon ,  Sun-Ho Jeong ,  Dong-Jo Kim ,  Kyoo-Hee Woo

IPC: H01B1/02 ,  B05D1/40

CPC classification number: H01B1/22 ,  C09D11/36 ,  C09D11/52 ,  H05K1/097

Abstract: A conductive ink composition includes about 15% to about 50% by weight of copper nanoparticles, about 40% to about 80% by weight of a non-aqueous solvent mixture, about 0.01% to about 5% by weight of a dispersion agent and about 1% to about 20% by weight of a wetting agent. A conductive pattern may be formed with use of the conductive ink composition and an inkjet printer.

Abstract translation: 导电油墨组合物包含约15重量％至约50重量％的铜纳米颗粒，约40重量％至约80重量％的非水溶剂混合物，约0.01重量％至约5重量％的分散剂和约 1％至约20％重量的润湿剂。 可以使用导电油墨组合物和喷墨打印机形成导电图案。