NONVOLATILE MEMORY DEVICE
    12.
    发明申请
    NONVOLATILE MEMORY DEVICE 有权
    非易失性存储器件

    公开(公告)号:US20100290274A1

    公开(公告)日:2010-11-18

    申请号:US12488653

    申请日:2009-06-22

    Abstract: A nonvolatile memory device includes a data sense amplifier configured to supply a data detection current to a memory cell and detect a data detection voltage having a voltage level corresponding to a resistance of the memory cell, a first switching element configured to selectively transfer the data detection current to the memory cell, and a second switching element configured to be turned on simultaneously with the first switching element to selectively transfer the data detection current to the memory cell. The first switching element and the second switching element have a complementary voltage transfer characteristic.

    Abstract translation: 非易失性存储器件包括:数据读出放大器,被配置为向存储单元提供数据检测电流,并检测具有与存储单元的电阻对应的电压电平的数据检测电压;第一开关元件,被配置为选择性地传输数据检测 以及第二开关元件,其被配置为与第一开关元件同时导通,以选择性地将数据检测电流传送到存储单元。 第一开关元件和第二开关元件具有互补电压传递特性。

    Nonvolatile Memory Device
    13.
    发明申请
    Nonvolatile Memory Device 有权
    非易失性存储器件

    公开(公告)号:US20100290273A1

    公开(公告)日:2010-11-18

    申请号:US12487731

    申请日:2009-06-19

    Abstract: A nonvolatile memory device includes a plurality of programming current driving units configured to supply memory cells with a programming current corresponding to a write data, a common programming current controlling unit configured to generate a common control voltage for controlling the programming current and a switching unit configured to transfer the common control voltage to the programming current driving unit selected among the plurality of programming current driving units by a plurality of driving selection signals.

    Abstract translation: 一种非易失性存储器件包括:多个编程电流驱动单元,被配置为向存储单元提供与写数据相对应的编程电流;公共编程电流控制单元,被配置为产生用于控制编程电流的公共控制电压;以及配置 通过多个驱动选择信号将公共控制电压传送到在多个编程电流驱动单元中选择的编程电流驱动单元。

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