Abstract:
A pixel cell includes a substrate, an epitaxial layer, and a photo converting device in the epitaxial layer. The epitaxial layer has a doping concentration profile of embossing shape, and includes a plurality of layers that are stacked on the substrate. The photo converting device does not include a neutral region that has a constant potential in the vertical direction. Therefore, the image sensor including the pixel cell has high quantization efficiency, and a crosstalk between photo-converting devices is decreased.
Abstract:
The image sensor includes a pixel array including a plurality of pixels arranged in a non-red-green-blue (RGB) Bayer pattern, an analog-to-digital converter configured to convert an analog pixel signal output from each of the pixels into a digital pixel signal, and an RGB converter configured to convert the digital pixel signal into an RGB Bayer signal. Accordingly, the image sensor is compatible with a universal image signal processor (ISP), which receives and processes RGB Bayer signals, without an additional compatible device or module.
Abstract:
Image sensors and methods of manufacturing image sensors, the image sensors including a plurality of photoelectric conversion units formed within active regions defined in a semiconductor substrate; and a plurality of light guides having structures for guiding light incident from an external source onto the semiconductor substrate and the plurality of photoelectric conversion units, the light guides having different widths.
Abstract:
Image sensors including a semiconductor substrate, a plurality of photo detecting elements, a dielectric layer, a plurality of color filters, and a plurality of micro lenses. The photo detecting elements may be in the semiconductor substrate and may convert an incident light into an electric signal. The dielectric layer may be on the semiconductor substrate and may include a plurality of photo blocking regions on regions between the photo detecting elements. The color filters may be on the dielectric layer and may be disposed corresponding to the plurality of photo detecting elements, respectively. The micro lenses may be on the plurality of color filters and may be disposed corresponding to the plurality of photo detecting elements, respectively.
Abstract:
A color filter array is provided. The color filter array includes a plurality of basic filter blocks arranged in all directions. Each of the basic filter blocks include one or more color filters. The color filters include a first type color filter that passes through all light without filtering it or has a higher light transmittance than a second type color filter, a third type color filter, and a fourth type color filter. The second through fourth color filters being a red, green or blue filter. Accordingly, the color filter array increases sensitivity to incident light or increases brightness of outgoing light.
Abstract:
Provided is an image sensor. The image sensor includes a first pixel. The image sensor may include a second pixel formed to be adjacent to the first pixel. The pixel includes a first photoelectric conversion unit formed on a semiconductor substrate and generates charges according to incident light. A first color filter formed over the first photoelectric conversion unit guides light through the first color filter to the first photoelectric conversion unit corresponding to the color filter. The image sensor includes at least one light reflection pattern formed reflecting externally-incident light to the first or second pixel corresponding to the at least one light reflection pattern.
Abstract:
A color filter array includes a plurality of white filters, a plurality of yellow filters, a plurality of cyan filters and a plurality of green filters. The plurality of white filters transmits incident light. The plurality of yellow filters transmits a green component and a red component of the incident light. The plurality of cyan filters transmits the green component and a blue component of the incident light. The plurality of green filters transmits the green component of the incident light. An image sensor including the color filter array has high sensitivity and high SNR by increasing transmittance of the incident light.
Abstract:
Provided are image sensors and a methods of manufacturing image sensors. The image sensors may include a substrate, a pixel array region, and a peripheral circuit region. The substrate includes a first region and a second region. The pixel array region may be formed on the first region. The peripheral circuit region may be formed on the second region. The first region may be located higher than the second region. According to the image sensor and the method of manufacturing the same, the vertical height of the pixel array region is decreased as compared to the prior art, and thus the aspect ratio at the pixel array region is minimized. As a result, condensing efficiency the image sensor may be improved.