公开(公告)号：US06818562B2

公开(公告)日：2004-11-16

申请号：US10146394

申请日：2002-05-14

Applicant: Valentin Todorow ,  John Holland ,  Nicolas Gani

Inventor： Valentin Todorow ,  John Holland ,  Nicolas Gani

IPC: H01L2100

CPC classification number: H01J37/321 ,  H01J37/32183 ,  H03H7/40

Abstract: A method and apparatus for operating a matching network within a plasma enhanced semiconductor wafer processing system that uses pulsed power to facilitate plasma processing.

Abstract translation: 一种在使用脉冲功率以促进等离子体处理的等离子体增强半导体晶片处理系统内操作匹配网络的方法和装置。

公开(公告)号：US20070245961A1

公开(公告)日：2007-10-25

申请号：US11410781

申请日：2006-04-24

Applicant: Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

Inventor： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC: C23C16/00

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32165

Abstract: A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling dissociation of species in the process region by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

Abstract translation: 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入过程区域，并通过控制VHF源功率的有效频率来控制处理区域中物种的离解。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。

公开(公告)号：US20050241762A1

公开(公告)日：2005-11-03

申请号：US11060980

申请日：2005-02-18

Applicant: Alexander Paterson ,  Elizabeth Pavel ,  Valentin Todorow ,  Huong Nguyen ,  Thomas Kropewnicki ,  Brian Hatcher ,  John Holland

Inventor： Alexander Paterson ,  Elizabeth Pavel ,  Valentin Todorow ,  Huong Nguyen ,  Thomas Kropewnicki ,  Brian Hatcher ,  John Holland

IPC: C23F1/00 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165

Abstract: Embodiments of the invention generally provide etch or CVD plasma processing methods and apparatus used to generate a uniform plasma across the surface of a substrate by modulation pulsing the power delivered to a plurality of plasma controlling devices found in a plasma processing chamber. The plasma generated and/or sustained in the plasma processing chamber is created by the one or more plasma controlling devices that are used to control, generate, enhance, and/or shape the plasma during the plasma processing steps by use of energy delivered from a RF power source. Plasma controlling devices may include, for example, one or more coils (inductively coupled plasma), one or more electrodes (capacitively coupled plasma), and/or any other energy inputting device such as a microwave source.

Abstract translation: 本发明的实施例通常提供蚀刻或CVD等离子体处理方法和装置，用于通过调制脉冲输送到在等离子体处理室中发现的多个等离子体控制装置的功率来在衬底的表面上产生均匀的等离子体。 在等离子体处理室中产生和/或维持的等离子体是由一个或多个等离子体控制装置产生的，这些等离子体控制装置用于在等离子体处理步骤期间通过使用从等离子体处理室输送的能量来控制，产生，增强和/或形成等离子体 射频电源。 等离子体控制装置可以包括例如一个或多个线圈（电感耦合等离子体），一个或多个电极（电容耦合等离子体）和/或任何其它能量输入装置，例如微波源。

公开(公告)号：US20080023443A1

公开(公告)日：2008-01-31

申请号：US11766067

申请日：2007-06-20

Applicant: Alexander Paterson ,  Elizabeth Pavel ,  Valentin Todorow ,  Huong Nguyen ,  Thomas Kropewnicki ,  Brian Hatcher ,  John Holland

Inventor： Alexander Paterson ,  Elizabeth Pavel ,  Valentin Todorow ,  Huong Nguyen ,  Thomas Kropewnicki ,  Brian Hatcher ,  John Holland

IPC: C23F1/00

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165

Abstract: Embodiments of the invention generally provide etch or CVD plasma processing methods and apparatus used to generate a uniform plasma across the surface of a substrate by modulation pulsing the power delivered to a plurality of plasma controlling devices found in a plasma processing chamber. The plasma generated and/or sustained in the plasma processing chamber is created by the one or more plasma controlling devices that are used to control, generate, enhance, and/or shape the plasma during the plasma processing steps by use of energy delivered from a RF power source. Plasma controlling devices may include, for example, one or more coils (inductively coupled plasma), one or more electrodes (capacitively coupled plasma), and/or any other energy inputting device such as a microwave source.

Abstract translation: 本发明的实施例通常提供蚀刻或CVD等离子体处理方法和装置，用于通过调制脉冲输送到在等离子体处理室中发现的多个等离子体控制装置的功率来在衬底的表面上产生均匀的等离子体。 在等离子体处理室中产生和/或维持的等离子体是由一个或多个等离子体控制装置产生的，这些等离子体控制装置用于在等离子体处理步骤期间通过使用从等离子体处理室输送的能量来控制，产生，增强和/或形成等离子体 射频电源。 等离子体控制装置可以包括例如一个或多个线圈（电感耦合等离子体），一个或多个电极（电容耦合等离子体）和/或任何其它能量输入装置，例如微波源。

公开(公告)号：US20070246443A1

公开(公告)日：2007-10-25

申请号：US11410827

申请日：2006-04-24

Applicant: Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

Inventor： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC: C23F1/00

CPC classification number: H01J37/32935 ,  H01J37/32082 ,  H01L21/32138

Abstract: A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and adjusting the extent of dissociation of species in the plasma by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power. The method may further include controlling plasma ion density in the chamber by controlling the total amount of plasma source power capacitively and inductively coupled into the process region.

Abstract translation: 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入过程区域，并且通过调节电容耦合VHF功率和感应耦合功率之间的比率来调节物质在等离子体中的解离程度。 该方法还可以包括通过控制电容性和电感耦合到处理区域中的等离子体源功率的总量来控制腔室中的等离子体离子密度。

公开(公告)号：US20070246163A1

公开(公告)日：2007-10-25

申请号：US11410784

申请日：2006-04-24

Applicant: Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

Inventor： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC: C23F1/00 ,  C23C16/00

CPC classification number: C23C16/5096 ,  C23C16/458 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32165

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, an inductively coupled plasma source power applicator overlying the ceiling, and an RF power generator coupled to the inductively coupled source power applicator, and a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and a VHF power generator coupled to the capacitively coupled source power applicator. The reactor further includes a plasma bias power applicator comprising a bias power electrode in the workpiece support and at least a first RF bias power generator coupled to the plasma bias power applicator, process gas distribution apparatus comprising a gas distribution showerhead in the ceiling, a vacuum pump for evacuating the chamber, and a first controller capable of adjusting the relative amounts of power simultaneously coupled to plasma in the chamber by the inductively coupled plasma source power applicator and the capacitively coupled plasma source power applicator.

Abstract translation: 用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，覆盖天花板的电感耦合等离子体源功率施加器，以及耦合到感应耦合的RF功率发生器 源电源施加器和电容耦合的等离子体源功率施加器，其包括源功率电极，其以下之一：（a）天花板（b）工件支撑件以及耦合到电容耦合的源功率施加器的VHF发电机。 反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的至少第一RF偏置功率发生器，处理气体分配装置包括天花板中的气体分配喷头，真空 泵，以及第一控制器，其能够通过电感耦合等离子体源功率施加器和电容耦合等离子体源功率施加器来调节同时耦合到腔室中的等离子体的功率的相对量。

公开(公告)号：US20070246162A1

公开(公告)日：2007-10-25

申请号：US11410864

申请日：2006-04-24

Applicant: Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

Inventor： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC: C23F1/00

CPC classification number: H01J37/32165 ,  H01J37/32091 ,  H01J37/321

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, an inductively coupled plasma source power applicator overlying the ceiling, and an RF power generator coupled to the inductively coupled source power applicator, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator including a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.

Abstract translation: 用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，覆盖天花板的电感耦合等离子体源功率施加器，以及耦合到感应耦合的RF功率发生器 源电源施加器，电容耦合等离子体源功率施加器，其包括源功率电极，其以下之一：（a）天花板（b）工件支撑件以及耦合到电容耦合的源电力施加器的不同固定频率的多个VHF发电机， 以及控制器，用于独立地控制多个VHF发生器的功率输出电平，以便控制施加到源极功率电极的有效VHF频率。 在优选实施例中，反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的不同频率的一个或多个RF偏置功率发生器。

公开(公告)号：US20070246161A1

公开(公告)日：2007-10-25

申请号：US11410863

申请日：2006-04-24

Applicant: Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

Inventor： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC: C23F1/00

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32706

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a toroidal plasma source comprising a hollow reentrant conduit external of the chamber and having a pair of ends connected to the interior of the chamber and forming a closed toroidal path extending through the conduit and across the diameter of the workpiece support, and an RF power applicator adjacent a portion of the reentrant external conduit, and an RF source power generator coupled to the RF power applicator of the toroidal plasma source. The reactor further includes a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode.

Abstract translation: 用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，环形等离子体源，其包括腔室外部的空心折返导管，并且具有连接到 腔室的内部并且形成延伸穿过导管并跨越工件支撑件的直径的封闭的环形路径，以及邻近可折入的外部导管的一部分的RF功率施加器，以及耦合到RF功率施加器的RF源功率发生器 的环形等离子体源。 反应器还包括电容耦合的等离子体源功率施加器，其包括源功率电极，其特征在于：（a）天花板（b）工件支架，以及耦合到电容耦合源功率施加器的不同固定频率的多个VHF发电机， 以及控制器，用于独立地控制多个VHF发生器的功率输出电平，以便控制施加到源极功率电极的有效VHF频率。

公开(公告)号：US20070245959A1

公开(公告)日：2007-10-25

申请号：US11410717

申请日：2006-04-24

Applicant: Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

Inventor： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC: C23C16/00

CPC classification number: H01J37/321 ,  H01J37/32091 ,  H01J37/32165

Abstract: A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling plasma ion density by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

Abstract translation: 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入工艺区域，并通过控制VHF源功率的有效频率来控制等离子体离子密度。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。

公开(公告)号：US20070245958A1

公开(公告)日：2007-10-25

申请号：US11410698

申请日：2006-04-24

Applicant: Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

Inventor： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC: C23C16/00

CPC classification number: H01J37/32165 ,  H01J37/32091 ,  H01J37/321

Abstract: A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling radial distribution of plasma ion density in the process region by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

Abstract translation: 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入过程区域，并且通过控制VHF源功率的有效频率来控制处理区域中的等离子体离子密度的径向分布。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。