公开(公告)号：US20110175126A1

公开(公告)日：2011-07-21

申请号：US13008702

申请日：2011-01-18

申请人： Hung-Chih YANG ,  Ming-Chi Hsu ,  Ta-Cheng Hsu ,  Chih-Chung Yang ,  Tsung-Yi Tang ,  Yung-Sheng Chen ,  Wen-Yu Shiao ,  Che-Hao Liao ,  Yu-Jiun Shen ,  Sheng-Horng Yen

发明人： Hung-Chih YANG ,  Ming-Chi Hsu ,  Ta-Cheng Hsu ,  Chih-Chung Yang ,  Tsung-Yi Tang ,  Yung-Sheng Chen ,  Wen-Yu Shiao ,  Che-Hao Liao ,  Yu-Jiun Shen ,  Sheng-Horng Yen

IPC分类号： H01L31/0352 ,  B82Y99/00

CPC分类号： H01L33/12 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/007 ,  H01L33/16 ,  H01L33/20

摘要： A light emitting diode device is provided, which comprises a substrate comprising a first growth surface and a bottom surface opposite to the first growth surface; a dielectric layer with a plurality of openings therein formed on the first growth surface; a plurality of semiconductor nano-scaled structures formed on the substrate protruding through the openings; a layer formed on the plurality of semiconductor nano-scaled structures with a second growth surface substantially parallel with the bottom surface; a light emitting diode structure formed on the second growth surface; wherein the diameters of the openings are smaller than 250 nm, and wherein the diameters of the plurality semiconductor nano-scaled structures are larger than the diameters of the corresponding openings.

摘要翻译： 提供了一种发光二极管器件，其包括：衬底，其包括与第一生长表面相对的第一生长表面和底表面; 在第一生长表面上形成有多个开口的电介质层; 形成在所述基板上的多个半导体纳米尺度结构，所述多个半导体纳米级结构通过所述开口突出; 形成在所述多个半导体纳米级结构上的层，其具有基本上平行于所述底表面的第二生长表面; 形成在所述第二生长表面上的发光二极管结构; 其中所述开口的直径小于250nm，并且其中所述多个半导体纳米尺度结构的直径大于相应开口的直径。

公开(公告)号：US07615773B2

公开(公告)日：2009-11-10

申请号：US11647170

申请日：2006-12-29

申请人： Shih-Nan Yen ,  Jung-Tu Chiu ,  Yu-Jiun Shen ,  Ching-Fu Tsai

发明人： Shih-Nan Yen ,  Jung-Tu Chiu ,  Yu-Jiun Shen ,  Ching-Fu Tsai

IPC分类号： H01L29/06

CPC分类号： H01L33/06 ,  H01L33/025

摘要： A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.

摘要翻译： 半导体发光器件包括衬底; 以及形成在所述衬底上的有源层，包括具有无意掺杂杂质的阱层; 第一阻挡层; 以及第二阻挡层，其中所述阱层设置在所述第一阻挡层和所述第二阻挡层之间，所述第一势垒层包括靠近所述阱层的n型杂质有意掺杂部分，以及n型 远离阱层的非有意掺杂部分; 第二阻挡层包括靠近阱层的n型杂质无意掺杂部分。