公开(公告)号：US20110175126A1

公开(公告)日：2011-07-21

申请号：US13008702

申请日：2011-01-18

申请人： Hung-Chih YANG ,  Ming-Chi Hsu ,  Ta-Cheng Hsu ,  Chih-Chung Yang ,  Tsung-Yi Tang ,  Yung-Sheng Chen ,  Wen-Yu Shiao ,  Che-Hao Liao ,  Yu-Jiun Shen ,  Sheng-Horng Yen

发明人： Hung-Chih YANG ,  Ming-Chi Hsu ,  Ta-Cheng Hsu ,  Chih-Chung Yang ,  Tsung-Yi Tang ,  Yung-Sheng Chen ,  Wen-Yu Shiao ,  Che-Hao Liao ,  Yu-Jiun Shen ,  Sheng-Horng Yen

IPC分类号： H01L31/0352 ,  B82Y99/00

CPC分类号： H01L33/12 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/007 ,  H01L33/16 ,  H01L33/20

摘要： A light emitting diode device is provided, which comprises a substrate comprising a first growth surface and a bottom surface opposite to the first growth surface; a dielectric layer with a plurality of openings therein formed on the first growth surface; a plurality of semiconductor nano-scaled structures formed on the substrate protruding through the openings; a layer formed on the plurality of semiconductor nano-scaled structures with a second growth surface substantially parallel with the bottom surface; a light emitting diode structure formed on the second growth surface; wherein the diameters of the openings are smaller than 250 nm, and wherein the diameters of the plurality semiconductor nano-scaled structures are larger than the diameters of the corresponding openings.

摘要翻译： 提供了一种发光二极管器件，其包括：衬底，其包括与第一生长表面相对的第一生长表面和底表面; 在第一生长表面上形成有多个开口的电介质层; 形成在所述基板上的多个半导体纳米尺度结构，所述多个半导体纳米级结构通过所述开口突出; 形成在所述多个半导体纳米级结构上的层，其具有基本上平行于所述底表面的第二生长表面; 形成在所述第二生长表面上的发光二极管结构; 其中所述开口的直径小于250nm，并且其中所述多个半导体纳米尺度结构的直径大于相应开口的直径。

公开(公告)号：US20080124827A1

公开(公告)日：2008-05-29

申请号：US11819520

申请日：2007-06-28

申请人： Chi-Feng Huang ,  Tsung-Yi Tang ,  Jeng-Jie Huang ,  Wen-Yu Shiao ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Jian-Jang Huang ,  Chih-Chung Yang

发明人： Chi-Feng Huang ,  Tsung-Yi Tang ,  Jeng-Jie Huang ,  Wen-Yu Shiao ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Jian-Jang Huang ,  Chih-Chung Yang

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32

摘要： A method and structure for manufacturing long-wavelength visible light-emitting diode (LED) using the prestrained growth effect comprises the following steps: Growing a strained low-indium-content InGaN layer on the N-type GaN layer, and then growing a high-indium-content InGaN/GaN single- or multiple-quantum-well light-emitting structure on the low-indium-content InGaN layer to enhance the indium content of the high-indium quantum wells and hence to elongate the emission wavelength of the LED. The method of the invention can elongate emission wavelength of the LED by more than 50 nm (nanometer) such that an originally designated green LED can emit red light or orange light without influencing other electrical properties.

摘要翻译： 使用预制生长效应制造长波长可见发光二极管（LED）的方法和结构包括以下步骤：在N型GaN层上生长应变低铟含量InGaN层，然后生长高 在铟含量低的InGaN层上的InGaN / GaN单或多量子阱发光结构，以增强高铟量子阱的铟含量，从而延长LED的发射波长 。 本发明的方法可以使LED的发射波长可以超过50nm（纳米），使得原始指定的绿色LED可以发射红光或橙光而不影响其他电性能。

公开(公告)号：US20080035909A1

公开(公告)日：2008-02-14

申请号：US11819175

申请日：2007-06-26

申请人： Chih-Feng Lu ,  Horng-Shyang Chen ,  Dong-Ming Yeh ,  Chi-Feng Huang ,  Tsung-Yi Tang ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang ,  Jeng-Jie Huang ,  Yung-Sheng Chen

发明人： Chih-Feng Lu ,  Horng-Shyang Chen ,  Dong-Ming Yeh ,  Chi-Feng Huang ,  Tsung-Yi Tang ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang ,  Jeng-Jie Huang ,  Yung-Sheng Chen

IPC分类号： H01L31/024 ,  H01L21/22 ,  H01L21/302

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32

摘要： A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

摘要翻译： 公开了一种用于控制根据本发明制造的多波长发光二极管（LED）的颜色对比度的方法。 本发明至少包括提高多量子阱LED的结温的步骤，使得空穴分布在LED的较深量子阱层中以增加较深量子阱层的发光强度，由此 控制由LED发射的多个波长的相对强度比。 通过调节LED的p型电极层的厚度或通过改变台面面积尺寸来控制其相对的热辐射表面积来实现增加多量子阱LED的结温的步骤。

公开(公告)号：US07875478B2

公开(公告)日：2011-01-25

申请号：US11819175

申请日：2007-06-26

申请人： Dong-Ming Yeh ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Chi-Feng Huang ,  Tsung-Yi Tang ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang ,  Jeng-Jie Huang ,  Yung-Sheng Chen

发明人： Dong-Ming Yeh ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Chi-Feng Huang ,  Tsung-Yi Tang ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang ,  Jeng-Jie Huang ,  Yung-Sheng Chen

IPC分类号： H01L21/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32

摘要： A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

摘要翻译： 公开了一种用于控制根据本发明制造的多波长发光二极管（LED）的颜色对比度的方法。 本发明至少包括提高多量子阱LED的结温的步骤，使得空穴分布在LED的较深量子阱层中以增加较深量子阱层的发光强度，由此 控制由LED发射的多个波长的相对强度比。 通过调节LED的p型电极层的厚度或通过改变台面面积尺寸来控制其相对的热辐射表面积来实现增加多量子阱LED的结温的步骤。