Abstract:
An active-matrix liquid crystal display integrally formed with a driver circuit including: a pair of substrates disposed in opposing relation to each other; and a liquid crystal material sandwiched between the pair of substrates, wherein the pair of substrates includes: a TFT substrate including at least an insulative substrate, source interconnection line and gate interconnection line which are formed in a matrix pattern on the insulative substrate, a thin film transistor provided to each pixel portion for use as a switching element for applying a voltage to a portion of the liquid crystal material which lies at a location where the source interconnection line and the gate interconnection line intersect each other, a pixel electrode connected to a drain electrode of the thin film transistor for supplying a voltage to the liquid crystal material, and a CMOS driver circuit having a CMOS which comprises thin film transistors for supplying an electric signal to the thin film transistor of the pixel portion through the source interconnection line and the gate interconnection line; and a counterpart substrate including an insulative substrate and a counter electrode formed thereon, the thin film transistor provided to the pixel portion being of a first conductivity type and of an offset or LDD structure, at least a first conductivity type thin film transistor of the thin film transistors of the CMOS driver circuit being of an offset or LDD structure.
Abstract:
An array substrate has regions in which an intermediate resist film thickness is formed and processed by an intermediate exposure amount which does not completely expose a resist, respectively on a drain electrode, source terminal, and a common connection wiring which are made of a second conductive film. Thin film patterns or a common wiring made of a first conductive film is formed in substantially entire regions on the bottom layers of the regions so that the heights from a substrate are substantially the same.
Abstract:
Source lines cross, over an intervening first insulation film, gate lines on an insulation substrate. Switching elements are on crossings between the gate lines and the source lines. Pixel electrodes are connected to the switching elements. Common electrodes facing the pixel electrodes generate between the pixel electrodes and the common electrodes an electric field directed approximately parallel to the insulation substrate. First shielding electrode patterns along the source lines in a layer, with the first insulation film intervening, underneath the source lines, at least partially overlap the source lines widthwise. Plural second shielding electrode patterns are formed along the source lines, overlapping the first shielding electrode patterns and without substantially overlapping the source lines in a layer, with a second insulation film intervening, above the source lines. The first shielding electrode patterns having a same electric potential as the plural second shielding electrode patterns.
Abstract:
An array substrate is provided with thereon a display area in which plural pixels are arranged in a matrix shape. Output-side mounting terminals for a source driving circuit chip, which is COG-mounted on a frame area on the outside of the display area, have a plural-row zigzag arrangement. Inspection terminals individually provided in correspondence to the output-side mounting terminals have a zigzag arrangement opposite to the zigzag arrangement of the output-side mounting terminals in a terminal-row direction. Additionally, the output-side mounting terminals and the inspection terminals are disposed below the source driving circuit chip.
Abstract:
A thin film transistor array substrate includes a reflective electrode, a storage capacitor electrode disposed below the reflective electrode with a first insulation layer interposed therebetween, a second insulation layer disposed above the reflective electrode, the second insulation layer having a contact hole in an area where the storage capacitor electrode is not disposed, a transmissive electrode electrically connected to the reflective electrode through the contact hole, and a thickness compensation pattern disposed below the reflective electrode in an area having the contact hole. The thickness compensation pattern is isolated from the storage capacitor electrode.
Abstract:
A liquid crystal display of the present invention comprises a display portion having two opposed insulating substrates (an electrode substrate (1) and an opposed substrate 2) holding a liquid crystal layer to form a plurality of display elements, wires (3a) formed on at least one of the insulating substrates, for supplying signals to the plurality of display elements, a driver LSI (6) provided in a peripheral portion of the insulating substrate, being connected to terminals of the wires (3a, 3b) to drive a plurality of display elements, and a conductive film pattern portion formed on the wires (3a) in the peripheral portion of the insulating substrate with a first insulating layer interposed therebetween. With this constitution, a liquid crystal display which allows inspection of output signals of the driver LSI in a failure analysis, without extending wires or exposing electrode portions connected to the wires and a method of inspecting the liquid crystal display are provided.
Abstract:
The present invention provides a transflective liquid crystal display device that has reflective contrast reduction preventing electrodes formed in given positions and that is capable of preventing bright dot defects while preventing reduction of reflective contrast. In a reflective region in a pixel region, a reflective electrode is formed in the same layer as source bus lines and separated by given spaces from the source bus lines. Reflective contrast reduction preventing electrodes are formed above the given spaces and have areas overlapping the reflective electrode in plane view, with an insulating film formed between them. The reflective contrast reduction preventing electrodes are in an electrically floating state.
Abstract:
A contrast reduction preventive electrode is formed in a reflective region, and in the same layer as a transparent pixel electrode. A connection for connecting the contrast reduction preventive electrode and the transparent pixel electrode is formed, in such a position that the connection does not overlap an auxiliary capacitive wiring in plan view. When a short circuit is generated between the surfaces of the contrast reduction preventive electrode and an opposed electrode (not shown), the contrast reduction preventive electrode is cut off from the transparent pixel electrode at the connection.
Abstract:
The present invention provides a display device capable of reducing cost by reduction in number of integrators. Signal lines (91 to 94, 95 to 98, 99 to 912, 913 to 916) are brought together into one line by means of signal lines (10a, 10b, 10c, 10d) to be connected to integrators (4a, 4b, 4c, 4d), respectively. Selector lines (71 to 74) orthogonal to the signal lines (91 to 916) are formed and connected to a selector driving circuit (3). An a-SiTFT (12) is formed at each of intersections: an intersection of the selector line (71) and the signal lines (91, 95, 99, 913); an intersection of the selector line (72) and the signal lines (92, 96, 910, 914); an intersection of the selector line (73) and the signal lines (93, 97, 911, 915); and an intersection of the selector line (74) and the signal lines (94, 98, 912, 916). The selector lines (71 to 74) are driven in sequence by the selector driving circuit (3) in the frame period.
Abstract:
A TFT-array including a substrate, a gate electrode, a first and second electrode provided on the substrate simultaneously with the gate electrode, an insulating film formed on the gate electrode, the first and the second electrode, a semiconductor layer formed on the gate electrode in such a manner that the insulating film is interposed between the semiconductor layer and the gate electrode, a pair of electrodes, either of which is connected with the first electrode or the second electrode, said pair of electrodes defining a semiconductor element together with the semiconductor layer.