Liquid crystal display and method of inspecting the same
    1.
    发明授权
    Liquid crystal display and method of inspecting the same 有权
    液晶显示及检查方法

    公开(公告)号:US07535522B2

    公开(公告)日:2009-05-19

    申请号:US11151533

    申请日:2005-06-14

    IPC分类号: G02F1/1333 G02F1/1345

    CPC分类号: G02F1/13452 G02F1/1309

    摘要: A liquid crystal display of the present invention comprises a display portion having two opposed insulating substrates (an electrode substrate (1) and an opposed substrate 2) holding a liquid crystal layer to form a plurality of display elements, wires (3a) formed on at least one of the insulating substrates, for supplying signals to the plurality of display elements, a driver LSI (6) provided in a peripheral portion of the insulating substrate, being connected to terminals of the wires (3a, 3b) to drive a plurality of display elements, and a conductive film pattern portion formed on the wires (3a) in the peripheral portion of the insulating substrate with a first insulating layer interposed therebetween. With this constitution, a liquid crystal display which allows inspection of output signals of the driver LSI in a failure analysis, without extending wires or exposing electrode portions connected to the wires and a method of inspecting the liquid crystal display are provided.

    摘要翻译: 本发明的液晶显示器包括具有两个相对的绝缘基板(电极基板(1)和相对的基板2)的显示部分,该基板保持液晶层以形成多个显示元件, 用于向多个显示元件提供信号的至少一个绝缘基板,设置在绝缘基板的周边部分的驱动器LSI(6),与导线(3a,3b)的端子连接以驱动多个 显示元件和形成在绝缘基板的周边部分中的导线(3a)上的导电膜图案部分,其间插入有第一绝缘层。 利用这种结构,提供了一种液晶显示器,其能够在故障分析中检查驱动器LSI的输出信号,而不延伸连接到电线的电线或暴露电极部分以及检查液晶显示器的方法。

    Liquid crystal display and method of inspecting the same
    2.
    发明申请
    Liquid crystal display and method of inspecting the same 有权
    液晶显示及检查方法

    公开(公告)号:US20050286005A1

    公开(公告)日:2005-12-29

    申请号:US11151533

    申请日:2005-06-14

    IPC分类号: G02F1/13 G02F1/133 G02F1/1345

    CPC分类号: G02F1/13452 G02F1/1309

    摘要: A liquid crystal display of the present invention comprises a display portion having two opposed insulating substrates (an electrode substrate (1) and an opposed substrate 2) holding a liquid crystal layer to form a plurality of display elements, wires (3a) formed on at least one of the insulating substrates, for supplying signals to the plurality of display elements, a driver LSI (6) provided in a peripheral portion of the insulating substrate, being connected to terminals of the wires (3a, 3b) to drive a plurality of display elements, and a conductive film pattern portion formed on the wires (3a) in the peripheral portion of the insulating substrate with a first insulating layer interposed therebetween. With this constitution, a liquid crystal display which allows inspection of output signals of the driver LSI in a failure analysis, without extending wires or exposing electrode portions connected to the wires and a method of inspecting the liquid crystal display are provided.

    摘要翻译: 本发明的液晶显示器包括具有两个相对的绝缘基板(电极基板(1)和相对的基板2)的显示部分,该基板保持液晶层以形成多个显示元件, 用于向多个显示元件提供信号的绝缘基板中的至少一个,设置在绝缘基板的周边部分的驱动器LSI(6)与导线(3a,3b)的端子连接以驱动 多个显示元件和形成在绝缘基板的周边部分的导线(3a)上的导电膜图案部分,其间插入有第一绝缘层。 利用这种结构,提供了一种液晶显示器,其能够在故障分析中检查驱动器LSI的输出信号,而不延伸连接到电线的电线或暴露电极部分以及检查液晶显示器的方法。

    Display device
    3.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号:US07876122B2

    公开(公告)日:2011-01-25

    申请号:US12411990

    申请日:2009-03-26

    IPC分类号: G01R31/00

    摘要: An array substrate is provided with thereon a display area in which plural pixels are arranged in a matrix shape. Output-side mounting terminals for a source driving circuit chip, which is COG-mounted on a frame area on the outside of the display area, have a plural-row zigzag arrangement. Inspection terminals individually provided in correspondence to the output-side mounting terminals have a zigzag arrangement opposite to the zigzag arrangement of the output-side mounting terminals in a terminal-row direction. Additionally, the output-side mounting terminals and the inspection terminals are disposed below the source driving circuit chip.

    摘要翻译: 在阵列基板上设置有以矩阵形状排列有多个像素的显示区域。 用于COG安装在显示区域外侧的框架区域上的源极驱动电路芯片的输出侧安装端子具有多行Z字形布置。 与输出侧安装端子对应地分别设置的检查端子具有与端子排方向上的输出侧安装端子的Z字形排列相对的Z字形排列。 此外,输出侧安装端子和检查端子设置在源极驱动电路芯片的下方。

    Thin film transistor array substrate, manufacturing method for the same, and transflective liquid crystal display
    5.
    发明授权
    Thin film transistor array substrate, manufacturing method for the same, and transflective liquid crystal display 有权
    薄膜晶体管阵列基板,制造方法及半透射液晶显示器

    公开(公告)号:US07554634B2

    公开(公告)日:2009-06-30

    申请号:US11548488

    申请日:2006-10-11

    IPC分类号: G02F1/1335 G02F1/1343

    CPC分类号: G02F1/133555 G02F1/136227

    摘要: A thin film transistor array substrate includes a reflective electrode, a storage capacitor electrode disposed below the reflective electrode with a first insulation layer interposed therebetween, a second insulation layer disposed above the reflective electrode, the second insulation layer having a contact hole in an area where the storage capacitor electrode is not disposed, a transmissive electrode electrically connected to the reflective electrode through the contact hole, and a thickness compensation pattern disposed below the reflective electrode in an area having the contact hole. The thickness compensation pattern is isolated from the storage capacitor electrode.

    摘要翻译: 薄膜晶体管阵列基板包括反射电极,设置在反射电极下方的辅助电容电极,其间插入有第一绝缘层,设置在反射电极上方的第二绝缘层,第二绝缘层在其中 不设置保持电容电极,通过接触孔与反射电极电连接的透射电极和设置在具有接触孔的区域中的反射电极下方的厚度补偿图案。 厚度补偿图案与存储电容器电极隔离。

    Semi-transparent TFT array substrate, and semi-transparent liquid crystal display with transparent pixel electrode and contrast reduction preventive electrode connected in the same layer
    6.
    发明授权
    Semi-transparent TFT array substrate, and semi-transparent liquid crystal display with transparent pixel electrode and contrast reduction preventive electrode connected in the same layer 有权
    半透明TFT阵列基板和半透明液晶显示器,其透明像素电极和对比度减少预防电极连接在同一层

    公开(公告)号:US07826014B2

    公开(公告)日:2010-11-02

    申请号:US11372086

    申请日:2006-03-10

    IPC分类号: G02F1/1343

    摘要: A semi-transparent TFT array substrate has a TFT including a source electrode, a gate electrode, and a drain electrode. The substrate also has an auxiliary capacitive wiring and a reflective pixel electrode. Further, the substrate has a transparent pixel electrode including an electrode extending from a corner of the rest of the transparent pixel electrode to an edge of the auxiliary capacitive wiring closest to a gate wiring connected to the gate electrode. In addition, the substrate has a source wiring connected to the source electrode. The auxiliary capacitive wiring overlaps a space existing between the reflective pixel electrode and the source wiring. The electrode is disposed between the reflective pixel electrode and the source wiring. A connection which connects the electrode and the rest of the transparent pixel electrode does not overlap the auxiliary capacitive wiring in a plan view. The connection does not overlap the gate wiring.

    摘要翻译: 半透明TFT阵列基板具有包括源电极,栅电极和漏电极的TFT。 基板还具有辅助电容布线和反射像素电极。 此外,衬底具有透明像素电极,其包括从透明像素电极的其余部分的角部延伸到最靠近连接到栅电极的栅极布线的辅助电容配线的边缘的电极。 此外,衬底具有连接到源电极的源极布线。 辅助电容布线与存在于反射像素电极和源极布线之间的空间重叠。 电极设置在反射像素电极和源极布线之间。 连接电极和透明像素电极的其余部分的连接在平面图中不与辅助电容布线重叠。 连接不与栅极布线重叠。

    Transflective liquid crystal display device and method for manufacturing the same
    8.
    发明申请
    Transflective liquid crystal display device and method for manufacturing the same 有权
    半透射型液晶显示装置及其制造方法

    公开(公告)号:US20060050213A1

    公开(公告)日:2006-03-09

    申请号:US11219879

    申请日:2005-09-07

    IPC分类号: G02F1/1335

    摘要: A transflective liquid crystal display device in which a transmissive area to transmit light to a pixel area and a reflective area as well as a thin film transistor are arranged on an insulating substrate, includes an TFT array substrate having plural gate wirings each provided with a gate electrode and a storage capacitive wiring provided with a storage capacitive electrode made of a first conductive film, plural source wirings each provided with a source electrode and a drain electrode made of a second conductive film, a reflecting pixel electrode extending from the drain electrode, and a transmissive pixel electrode formed through a second insulating film, and an opposite substrate arranged oppositely to the TFT array substrate. The source wirings and the reflecting pixel electrode are arranged apart from each other by a predetermined interval, and a contrast preventing electrode is formed over the interval on the second insulating film.

    摘要翻译: 在绝缘基板上配置有向像素区域透射光的透射区域和反射区域以及薄膜晶体管的半透射型液晶显示装置,具有具有多个栅极配线的TFT阵列基板,每个栅极布线均设有栅极 电极和设置有由第一导电膜制成的存储电容电极的存储电容布线,多个源极布线,每个源极配置有由第二导电膜制成的源电极和漏电极,从漏电极延伸的反射像素电极,以及 通过第二绝缘膜形成的透射像素电极和与TFT阵列基板相对布置的相对基板。 源极布线和反射像素电极以预定间隔彼此分开布置,并且在第二绝缘膜上的间隔上形成防反射电极。

    Method of fabricating thin film transistor
    9.
    发明授权
    Method of fabricating thin film transistor 失效
    制造薄膜晶体管的方法

    公开(公告)号:US5668019A

    公开(公告)日:1997-09-16

    申请号:US094954

    申请日:1993-07-23

    CPC分类号: H01L29/66757 H01L29/78621

    摘要: An Si thin film (2) for a channel is formed on an insulating substrate (1), and then a gate insulating film (3) made principally of SiO.sub.2 is formed thereon. On the gate insulating film (3) is formed a gate electrode (4) composed of a Si thin film doped with impurities. The gate electrode (4) is patterned by isotropic etching using a photoresist (11) as a mask, and the gate insulating film (3) is patterned by anisotropic etching using the photoresist (11) as a mask into a configuration wider than the gate electrode (4) to be removed from source/drain regions position. The Si thin film (2) is ion implanted with impurities to form source/drain regions of an offset structure. A thin film transistor having an offset or LDD structure and capable of reducing an off-state drain current is fabricated without the need for increased number of masks and for an accurate photolithography technique, such as in alignment accuracy between masks.

    摘要翻译: 在绝缘基板(1)上形成用于沟道的Si薄膜(2),然后在其上形成主要由SiO 2制成的栅极绝缘膜(3)。 在栅绝缘膜(3)上形成由掺杂有杂质的Si薄膜构成的栅电极(4)。 通过使用光致抗蚀剂(11)作为掩模的各向同性蚀刻对栅电极(4)进行构图,并且通过使用光致抗蚀剂(11)作为掩模的各向异性蚀刻将栅极绝缘膜(3)图案化成比栅极宽 电极(4)从源/漏区位置移除。 Si薄膜(2)被离子注入杂质以形成偏移结构的源极/漏极区域。 制造具有偏移或LDD结构并且能够降低截止状态漏极电流的薄膜晶体管,而不需要增加数量的掩模和精确的光刻技术,例如掩模之间的对准精度。

    Method of manufacturing TFT substrate and TFT substrate
    10.
    发明授权
    Method of manufacturing TFT substrate and TFT substrate 有权
    制造TFT基板和TFT基板的方法

    公开(公告)号:US07960728B2

    公开(公告)日:2011-06-14

    申请号:US12499209

    申请日:2009-07-08

    摘要: In a method of manufacturing a TFT substrate in accordance with an exemplary aspect of the present invention, an intrinsic semiconductor film, an impurity semiconductor film, and a conductive film for source lines are formed in succession, and a resist having a thin-film portion and a thick-film portions is formed on the conductive film for source lines. Then, etching is performed by using the resist as a mask, and after that, a part of the conductive film for source lines is exposed by removing the thin-film portion of the resist. Next, the exposed conductive film for source lines is etched by using the thick-film portions of the resist a mask, so that the impurity semiconductor film is exposed. Then, by etching the exposed impurity semiconductor film, a back channel region of a TFT 108 is formed. Further, a dummy back channel region 18a, which is irrelevant to the operation of the finished product, is also formed in a portion other than the TFT 108 region.

    摘要翻译: 在根据本发明的示例性方面的制造TFT基板的方法中,依次形成本征半导体膜,杂质半导体膜和源极线用导电膜,并且具有薄膜部分的抗蚀剂 并且在用于源极线的导电膜上形成厚膜部分。 然后,通过使用抗蚀剂作为掩模进行蚀刻,之后,通过去除抗蚀剂的薄膜部分来露出用于源极线的导电膜的一部分。 接下来,通过使用抗蚀剂的掩膜的厚膜部分来蚀刻用于源极线的暴露的导电膜,使得杂质半导体膜暴露。 然后,通过蚀刻暴露的杂质半导体膜,形成TFT 108的背沟道区域。 此外,与TFT 108区域以外的部分也形成与成品的操作无关的虚拟背沟道区域18a。