公开(公告)号：US20230077578A1

公开(公告)日：2023-03-16

申请号：US17473821

申请日：2021-09-13

Applicant: Applied Materials, Inc.

Inventor： Leonard M. Tedeschi ,  Kartik Ramaswamy ,  Benjamin CE Schwarz ,  Changgong Wang ,  Vahid Firouzdor ,  Sumanth Banda ,  Teng-Fang Kou

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L21/683 ,  H01J37/32

Abstract: Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

公开(公告)号：US20230051330A1

公开(公告)日：2023-02-16

申请号：US17402832

申请日：2021-08-16

Applicant: Applied Materials Inc.

Inventor： Dermot P. Cantwell ,  Changgong Wang ,  Nasreen Chopra ,  Moon Kyu Oh

IPC: G06F30/27

Abstract: A system includes a memory and a processing device, operatively coupled to the memory, to perform operations including receiving, as input to a trained machine learning model for identifying defect impact with respect to at least one type defect type, data associated with a process related to electronic device manufacturing. The data associated with the process comprises at least one of: an input set of recipe settings for processing a component, a set of desired characteristics to be achieved by processing the component, or a set of constraints specifying an allowable range for each setting of the set of recipe settings. The operations further include obtaining an output by applying the data associated with the process to the trained machine learning model. The output is representative of the defect impact with respect to the at least one defect type.

公开(公告)号：US20220381653A1

公开(公告)日：2022-12-01

申请号：US17819255

申请日：2022-08-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Changgong Wang ,  Zhili Zuo ,  Chang Ke ,  Song-Moon Suh

IPC: G01N1/02 ,  G01N15/02 ,  G01N15/06 ,  G01N15/14

Abstract: A stream including at least one of solid CO2 particles or CO2 droplets is directed toward an article including surface particles. The stream causes at least a portion of the surface particles on the article to dislodge from a surface of the article. A purge cycle to transport at least a portion of the dislodged surface particles away from the surface of the article is initiated. The purge cycle includes generating a laminar flow at a first velocity for a first time period and subsequently generating a laminar flow at a second velocity for a second time period. A determination is made of whether a number of particles transported away from the surface of the article satisfies a particle criterion. In response to a determination that the number of particles transported away from the article does not satisfy the criterion, the purge cycle is re-initiated.

公开(公告)号：US10790121B2

公开(公告)日：2020-09-29

申请号：US15947393

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Kumar ,  Prashanth Kothnur ,  Sidharth Bhatia ,  Anup Kumar Singh ,  Vivek Bharat Shah ,  Ganesh Balasubramanian ,  Changgong Wang

IPC: H01J37/32

Abstract: Implementations of the present disclosure generally relate to an apparatus for reducing particle contamination on substrates in a plasma processing chamber. The apparatus for reduced particle contamination includes a chamber body, a lid coupled to the chamber body. The chamber body and the lid define a processing volume therebetween. The apparatus also includes a substrate support disposed in the processing volume and an edge ring. The edge ring includes an inner lip disposed over a substrate, a top surface connected to the inner lip, a bottom surface opposite the top surface and extending radially outward from the substrate support, and an inner step between the bottom surface and the inner lip. To avoid depositing the particles on the substrate being processed when the plasma is de-energized, the edge ring shifts the high plasma density zone away from the edge area of the substrate.