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公开(公告)号:US12094716B2
公开(公告)日:2024-09-17
申请号:US17473821
申请日:2021-09-13
Applicant: Applied Materials, Inc.
Inventor: Leonard M. Tedeschi , Kartik Ramaswamy , Benjamin C E Schwarz , Changgong Wang , Vahid Firouzdor , Sumanth Banda , Teng-Fang Kou
IPC: H01L21/02 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/683
CPC classification number: H01L21/3065 , H01J37/32862 , H01L21/02274 , H01L21/31116 , H01L21/6833 , H01J2237/332 , H01J2237/334
Abstract: Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.
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公开(公告)号:US20230077578A1
公开(公告)日:2023-03-16
申请号:US17473821
申请日:2021-09-13
Applicant: Applied Materials, Inc.
Inventor: Leonard M. Tedeschi , Kartik Ramaswamy , Benjamin CE Schwarz , Changgong Wang , Vahid Firouzdor , Sumanth Banda , Teng-Fang Kou
IPC: H01L21/3065 , H01L21/02 , H01L21/311 , H01L21/683 , H01J37/32
Abstract: Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.
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