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    Apparatus and methods for controlling ion energy distribution
    11.
    发明授权
    Apparatus and methods for controlling ion energy distribution 有权

    公开(公告)号：US11798790B2

    公开(公告)日：2023-10-24

    申请号：US17099342

    申请日：2020-11-16

    Applicant: Applied Materials, Inc.

    Inventor： Linying Cui ,  James Rogers

    IPC: H01J37/32

    CPC classification number: H01J37/32697 ,  H01J37/32715

    Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a substrate electrode for applying a substrate voltage to a substrate, and an edge ring electrode embedded for applying an edge ring voltage to an edge ring. The apparatus further includes a substrate voltage control circuit coupled to the substrate electrode, and an edge ring voltage control circuit coupled to the edge ring electrode. The substrate electrode, edge ring electrode, or both are coupled to a power module configured to actively control an energy distribution function width of ions reaching the substrate, edge ring, or both. Methods for controlling an energy distribution function width of ions during substrate processing are also described.

    Gas splitting by time average injection into different zones by fast gas valves
    12.
    发明授权
    Gas splitting by time average injection into different zones by fast gas valves 有权

    公开(公告)号：US11610759B2

    公开(公告)日：2023-03-21

    申请号：US16277612

    申请日：2019-02-15

    Applicant: Applied Materials, Inc.

    Inventor： James Rogers

    IPC: H01J37/32 ,  C23C16/455 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/306 ,  C23C16/52

    Abstract: Disclosed herein is a gas delivery assembly for processing a substrate. In one example, a processing chamber comprises a plurality of walls, a bottom, and a lid to form an interior volume. Gas nozzles provide gas into the interior volume. A substrate support is disposed in the interior volume, having a top surface that supports a substrate. A gas delivery assembly comprises a gas manifold, and is disposed outside of the processing chamber. Gas passageways extend from the gas manifold to the gas nozzles, each gas passageway having similar conductance. A controller is fluidically coupled to each of the gas passageways, and is configured to control the timing at which a first process gas flows from the gas delivery assembly through the controller into the gas manifold, and the timing at which a second process gas is injected into the gas manifold through the gas nozzles.

    High voltage filter assembly
    13.
    发明授权
    High voltage filter assembly 有权

    公开(公告)号：US11508554B2

    公开(公告)日：2022-11-22

    申请号：US16355153

    申请日：2019-03-15

    Applicant: Applied Materials, Inc.

    Inventor： Anurag Kumar Mishra ,  James Rogers ,  Leonid Dorf ,  Rajinder Dhindsa ,  Olivier Luere

    IPC: H01J37/32 ,  H01L21/683

    Abstract: Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.

    Temperature and bias control of edge ring
    17.
    发明授权
    Temperature and bias control of edge ring 有权

    公开(公告)号：US10784089B2

    公开(公告)日：2020-09-22

    申请号：US16265186

    申请日：2019-02-01

    Applicant: Applied Materials, Inc.

    Inventor： James Rogers ,  Linying Cui ,  Rajinder Dhindsa

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065

    Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma assisted processing thereof. In one embodiment a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

    Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
    18.
    发明授权
    Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device 有权

    公开(公告)号：US10763081B2

    公开(公告)日：2020-09-01

    申请号：US16030356

    申请日：2018-07-09

    Applicant: Applied Materials, Inc.

    Inventor： Linying Cui ,  James Rogers

    IPC: H01J37/32

    Abstract: The present disclosure relates to apparatus and methods that manipulate the amplitude and phase of the voltage or current of an edge ring. The apparatus includes an electrostatic chuck having a chucking electrode embedded therein for chucking a substrate to the electrostatic chuck. The apparatus further includes a baseplate underneath the substrate to feed RF power to the substrate. The apparatus further includes an edge ring disposed over the electrostatic chuck. The apparatus further includes an edge ring electrode located underneath the edge ring. The apparatus further includes a radio frequency (RF) circuit including a first variable capacitor coupled to the edge ring electrode.

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