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    Enhanced plasma source for a plasma reactor
    4.
    发明授权
    Enhanced plasma source for a plasma reactor 有权

    公开(公告)号：US10290469B2

    公开(公告)日：2019-05-14

    申请号：US14293516

    申请日：2014-06-02

    Applicant: Applied Materials, Inc.

    Inventor： Valentin N. Todorow ,  Gary Leray ,  Michael D. Willwerth ,  Li-Sheng Chiang

    IPC: H05H1/46 ,  H01J37/32

    Abstract: Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.

    Power deposition control in inductively coupled plasma (ICP) reactors
    5.
    发明授权
    Power deposition control in inductively coupled plasma (ICP) reactors 有权

    公开(公告)号：US10553398B2

    公开(公告)日：2020-02-04

    申请号：US14463205

    申请日：2014-08-19

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Samer Banna ,  Tza-Jing Gung ,  Vladimir Knyazik ,  Kyle Tantiwong ,  Dan A. Marohl ,  Valentin N. Todorow ,  Stephen Yuen

    IPC: H01J37/32

    Abstract: Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.

    Method and apparatus for stable plasma processing
    6.
    发明授权
    Method and apparatus for stable plasma processing 有权
    稳定等离子体处理的方法和装置

    公开(公告)号：US08801896B2

    公开(公告)日：2014-08-12

    申请号：US13734532

    申请日：2013-01-04

    Applicant: Applied Materials, Inc.

    Inventor： Valentin N. Todorow ,  John P. Holland ,  Michael D. Willwerth

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC classification number: C23F4/00 ,  C23F1/08 ,  H01J37/321 ,  H01J37/32633 ,  H01L21/67069

    Abstract: A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.

    Abstract translation: 本文提供了使用空间修正等离子体蚀刻衬底的方法和设备。 在一个实施例中，该方法包括提供具有设置在基板支撑基座上方的等离子体稳定器的处理室。 将基板放置在基座上。 工艺气体被引入到处理室中，并且从处理气体形成等离子体。 用等离子体蚀刻衬底，该等离子体具有由等离子体稳定剂限定的离子密度与自由基密度比。

    Processing chamber with substrate edge enhancement processing
    9.
    发明授权
    Processing chamber with substrate edge enhancement processing 有权

    公开(公告)号：US11094511B2

    公开(公告)日：2021-08-17

    申请号：US16189440

    申请日：2018-11-13

    Applicant: Applied Materials, Inc.

    Inventor： Changhun Lee ,  Michael D. Willwerth ,  Valentin N. Todorow ,  Hean Cheal Lee ,  Hun Sang Kim

    IPC: H01J37/32 ,  G03F7/42

    Abstract: Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.

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