公开(公告)号：US10923321B2

公开(公告)日：2021-02-16

申请号：US16790086

申请日：2020-02-13

申请人： Applied Materials, Inc.

发明人： Leonid Dorf ,  Evgeny Kamenetskiy ,  James Rogers ,  Olivier Luere ,  Rajinder Dhindsa ,  Viacheslav Plotnikov

IPC分类号： H01J37/32 ,  H01L21/311 ,  H05H1/24 ,  H01L21/683

摘要： Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US11848176B2

公开(公告)日：2023-12-19

申请号：US17315234

申请日：2021-05-07

申请人： Applied Materials, Inc.

发明人： Leonid Dorf ,  Rajinder Dhindsa ,  James Rogers ,  Daniel Sang Byun ,  Evgeny Kamenetskiy ,  Yue Guo ,  Kartik Ramaswamy ,  Valentin N. Todorow ,  Olivier Luere

IPC分类号： H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

CPC分类号： H01J37/32128 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/6831 ,  H01J2237/2007 ,  H01J2237/3321 ,  H01J2237/3341

摘要： Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US11462389B2

公开(公告)日：2022-10-04

申请号：US17315259

申请日：2021-05-07

申请人： Applied Materials, Inc.

发明人： Leonid Dorf ,  Rajinder Dhindsa ,  James Rogers ,  Daniel Sang Byun ,  Evgeny Kamenetskiy ,  Yue Guo ,  Kartik Ramaswamy ,  Valentin N. Todorow ,  Olivier Luere ,  Jonathan Kolbeck ,  Linying Cui

IPC分类号： H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

摘要： Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US10916408B2

公开(公告)日：2021-02-09

申请号：US16790143

申请日：2020-02-13

申请人： Applied Materials, Inc.

发明人： Leonid Dorf ,  Evgeny Kamenetskiy ,  James Rogers ,  Olivier Luere ,  Rajinder Dhindsa ,  Viacheslav Plotnikov

IPC分类号： H01J37/32 ,  H01L21/311 ,  H05H1/24 ,  H01L21/683

摘要： Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US11699572B2

公开(公告)日：2023-07-11

申请号：US16748847

申请日：2020-01-22

申请人： Applied Materials, Inc.

发明人： Leonid Dorf ,  Evgeny Kamenetskiy ,  James Rogers ,  Olivier Luere ,  Rajinder Dhindsa ,  Viacheslav Plotnikov

IPC分类号： H01J37/32 ,  H01L21/311 ,  H01L21/683

CPC分类号： H01J37/32128 ,  H01J37/32082 ,  H01J37/3299 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/31116 ,  H01J2237/3341 ,  H01L21/6831

摘要： Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US11668553B2

公开(公告)日：2023-06-06

申请号：US17161271

申请日：2021-01-28

申请人： Applied Materials, Inc.

发明人： Sathyendra Ghantasala ,  Leonid Dorf ,  Evgeny Kamenetskiy ,  Peter Muraoka ,  Denis M. Koosau ,  Rajinder Dhindsa ,  Andreas Schmid

IPC分类号： G01B7/06 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC分类号： G01B7/08 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/68721 ,  H01J2237/24564

摘要： Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.

公开(公告)号：US12057292B2

公开(公告)日：2024-08-06

申请号：US18201358

申请日：2023-05-24

申请人： Applied Materials, Inc.

发明人： Leonid Dorf ,  Evgeny Kamenetskiy ,  James Rogers ,  Olivier Luere ,  Rajinder Dhindsa ,  Viacheslav Plotnikov

IPC分类号： H01J37/32 ,  H01L21/311 ,  H01L21/683

CPC分类号： H01J37/32128 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3299 ,  H01L21/31116 ,  H01J2237/3341 ,  H01L21/6831

摘要： Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US11776789B2

公开(公告)日：2023-10-03

申请号：US17959074

申请日：2022-10-03

申请人： Applied Materials, Inc.

发明人： Leonid Dorf ,  Rajinder Dhindsa ,  James Rogers ,  Daniel Sang Byun ,  Evgeny Kamenetskiy ,  Yue Guo ,  Kartik Ramaswamy ,  Valentin N. Todorow ,  Olivier Luere ,  Linying Cui

IPC分类号： H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

CPC分类号： H01J37/32128 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/6831 ,  H01J2237/2007 ,  H01J2237/3321 ,  H01J2237/3341

摘要： Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US11482402B2

公开(公告)日：2022-10-25

申请号：US17127838

申请日：2020-12-18

申请人： APPLIED MATERIALS, INC.

发明人： Leonid Dorf ,  Rajinder Dhindsa ,  Olivier Luere ,  Evgeny Kamenetskiy

IPC分类号： H01J37/32 ,  H05H1/46

摘要： Methods and apparatus for processing a substrate are provided herein. For example, an apparatus can be a controller for a high peak power radio frequency (RF) generator. The controller comprises a control logic circuit in operable communication with an RF generator operating in a burst mode, the control logic circuit configured to receive a power, P, request at a predetermined duty cycle, δ, from a plasma processing chamber, determine a peak maximum power, Ppeakmax, based on a maximum average power, Pavgmax, and a maximum absolute power, Pabsmax, of the RF generator and the predetermined duty cycle, and transmit a control signal to the RF generator to limit a peak power, Ppeak, to the plasma processing chamber based on the Ppeakmax.

公开(公告)号：US11462388B2

公开(公告)日：2022-10-04

申请号：US17315256

申请日：2021-05-07

申请人： Applied Materials, Inc.

发明人： Leonid Dorf ,  Rajinder Dhindsa ,  James Rogers ,  Daniel Sang Byun ,  Evgeny Kamenetskiy ,  Yue Guo ,  Kartik Ramaswamy ,  Valentin N. Todorow ,  Olivier Luere ,  Linying Cui

IPC分类号： H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

摘要： Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.